Pre-exposure method for increased sensitivity in high contrast resist development
Abstract
Abstract A high contrast developing process is described for use after pre-exposure to UV-visible radiation to produce increased sensitivity during lithographic processing of positive resists layers. Compared to samples which have not been subjected to the methods of this invention, sensitivity increases of a factor of 2-4 are to be expected. An additional benefit of low film loss from unexposed resist is obtained. The system disclosed is applicable to lithographic exposures utilizing electrons, photons (eg. UV-visible, x-rays, etc.) and atomic or molecular charged particles. Specifically, as a result of the increased sensitivity, higher throughput during lithographic processing for the fabrication of photomasks and semiconductor devices is realized.
Inventors
- 👤 Robert Austin Owens
- 👤 Roland Lee Chin
- 👤 Susan Antoinette Ferguson
- 👤 James Marvin Lewis
Bibliographic Details
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