EP0207767A2
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Pulsed plasma apparatus and process
Assignee: Nortel Networks Ltd
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Filing: 1986-06-27
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Granted: —
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Expires: 2006-06-27
Abstract
Abstract An apparatus for pulsed plasma treatment of a substrate surface includes means for removing spent gas from a region adjacent the substrate for each pulse. The apparatus may also include means for sweeping an intense plasma region across a substrate surface. Rapid gas exchange is provided by pressure pulsing the gas admission. This facility also provides means for rapidly alternating different gases.
Inventors
- 👤 Rudolf August Heinecke
- 👤 Sureshchandra Mishrilal Ojha
- 👤 Ian Paul Llewellyn
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-05 22:35
CPC Classifications
H; H01; H01J; H01J37/00; H01J37/32; H01J37/32431; H01J37/3244; C; C23; C23C; C23C16/00; C23C16/44; C23C16/50; C23C16/515
Claims Analysis
Total Claims: 21
Claim 1
Independent Claim
83 words
An apparatus for pulsed plasma processing of a substrate surface, the apparatus including a reactor chamber, a high power radio frequency pulse generator whereby, in use a substantially fully dissociated plasma is generated in the chamber, means for evacuating the chamber, means for supplying active or inert gases to the chamber, and means for controlling the inlet means relative to the evacuation means whereby the chamber or a region thereof is substantially depleted of reaction products in the period between successive generator pulses.
Claim 2
Independent Claim
83 words
An apparatus for pulsed plasma processing of a substrate surface, the apparatus including a reactor chamber, a high power radio frequency pulse generator whereby, in use a substantially fully dissociated plasma is generated in the chamber, means for evacuating the chamber, means for supplying active or inert gases to the chamber, and means for controlling the inlet means relative to the evacuation means whereby the chamber or a region thereof is substantially depleted of reaction products in the period between successive generator pulses.
Claim 3
Independent Claim
78 words
An apparatus for pulsed plasma processing of a substrate surface, the apparatus including a reactor chamber, a high power radio frequency pulse generator whereby, in use, a substantially fully dissociated localised plasma is generated in the chamber, means for evacuating the chamber, means for supplying active or inert gases to the chamber, and means for traversing the plasma across the substrate surface whereby, at a-given instant, only part of the substrate surface is in contact with the plasma.
Claim 4
Independent Claim
78 words
An apparatus for pulsed plasma processing of a substrate surface, the apparatus including a reactor chamber, a high power radio frequency pulse generator whereby, in use, a substantially fully dissociated localised plasma is generated in the chamber, means for evacuating the chamber, means for supplying active or inert gases to the chamber, and means for traversing the plasma across the substrate surface whereby, at a-given instant, only part of the substrate surface is in contact with the plasma.
Claim 5
Dependent Claim
24 words
An apparatus as claimed in claim 1 or 2, characterised in that the radio frequency pulses are applied sequentially to a plurality of electrodes.
Claim 6
Dependent Claim
36 words
An apparatus as claimed in claim 1, 2 or 3, characterised in that means are provided for admitting gas to the chamber in a pulsed manner whereby removal of spent gas from the chamber is facilitated.
Claim 7
Dependent Claim
27 words
An apparatus as claimed in claim 4, and including means for providing to said chamber pulses of a reactive gas alternated by pulses of an inactive gas.
Claim 8
Independent Claim
53 words
An apparatus as claimed in any one of claims 1 to 5, characterised in that the radio frequency generator includes an output stage driven via a buffer stage, and that the output stage is relatively enabled and disabled via a control signal applied to the buffer stage whereby a pulsed output is provided.
Claim 9
Dependent Claim
71 words
A process for pulse plasma treatment of a substrate surface, the process including exposing the surface to an atmosphere under reduced pressure, applying a high power pulsed radio frequency field to a region surrounding or adjacent the substrate thereby substantially fully dissociating the gas and effecting said surface treatment, and exchanging the atmosphere at least in a region adjacent the substrate surface so as to remove reaction products from that region.
Claim 10
Dependent Claim
71 words
A process for pulse plasma treatment of a substrate surface, the process including exposing the surface to an atmosphere under reduced pressure, applying a high power pulsed radio frequency field to a region surrounding or adjacent the substrate thereby substantially fully dissociating the gas and effecting said surface treatment, and exchanging the atmosphere at least in a region adjacent the substrate surface so as to remove reaction products from that region.
Claim 11
Dependent Claim
62 words
A process for pulse plasma treatment of a substrate surface, the process including exposing the surface to an atmosphere under reduced pressure, applying a high power pulsed radio frequency field to a region adjacent the substrate thereby substantially fully dissociating the gas within said region to form a plasma, and traversing said region across the substrate surface to effect said surface treatment.
Claim 12
Dependent Claim
62 words
A process for pulse plasma treatment of a substrate surface, the process including exposing the surface to an atmosphere under reduced pressure, applying a high power pulsed radio frequency field to a region adjacent the substrate thereby substantially fully dissociating the gas within said region to form a plasma, and traversing said region across the substrate surface to effect said surface treatment.
Claim 13
Dependent Claim
26 words
A process as claimed in claim 7 or 8, characterised in that a peak power density of 100 to 1000 watt/cm is applied to the plasma.
Claim 14
Dependent Claim
24 words
A process as claimed in claim 9, characterised in that an average power density of 0.5 to 10 watt/cm is applied to the plasma.
Claim 15
Dependent Claim
21 words
A process as claimed in claim 11, characterised in that the substrate surface is treated to deposit a layered structure thereon.
Claim 16
Dependent Claim
23 words
A process as claimed in any one of claims 7 to 11, characterised in that a hard interface is provided between said layers.
Claim 17
Dependent Claim
23 words
A process as claimed in any one of claims 7 to 12, characterised in that the composition of the atmosphere is changed repeatedly.
Claim 18
Dependent Claim
22 words
A process as claimed in claim 13, characterised in that the composition of the atmosphere is changed at each successive generator pulse.
Claim 19
Dependent Claim
30 words
A process as claimed in any one of claims 7 to 14, characterised in that the substrate is mounted on an electrode to which the radio frequency pulses are applied.
Claim 20
Dependent Claim
19 words
A process as claimed in claim 15, characterised in that the electrode is subject to a direct voltage bias.
Claim 21
Dependent Claim
16 words
A substrate treated by a process as claimed in any one of claims 7 to 16.
References Cited (Backward Citations)
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