EP0206444A1
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Semiconductor device with interconnection and insulating layers
Assignee: Mitsubishi Electric Corp
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Filing: 1986-01-20
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Granted: —
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Expires: 2006-01-20
Abstract
Abstract © To cover the interconnection (2) on a semiconductor device (1) at high speed with an insulating film (3) having good step coverage, a dummy pattern (8) is provided around the interconnection (2) and the dummy pattern (8) and the interconnection (2) are covered with the insulating film (3) using the bias sputtering method.
Inventors
- 👤 Kouzi Eguchi
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-03 15:10
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10W20/41; H10W20/435
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
48 words
A semiconductor device comprising: an interconnection (2) formed on a semiconductor substrate, a dummy pattern (8) formed around the outer periphery of said interconnection (2), and an insulating film (3) formed on said semiconductor substrate by the bias sputtering method to cover said interconnection and said dummy pattern.
Claim 2
Dependent Claim
48 words
A semiconductor device comprising: an interconnection (2) formed on a semiconductor substrate, a dummy pattern (8) formed around the outer periphery of said interconnection (2), and an insulating film (3) formed on said semiconductor substrate by the bias sputtering method to cover said interconnection and said dummy pattern.
Claim 3
Dependent Claim
21 words
A semiconductor device as set forth in claim 1, wherein said interconnection (2) is formed using aluminum or an aluminum alloy.
Claim 4
Dependent Claim
20 words
A semiconductor device as set forth in claim 1, wherein said dummy pattern (8) in formed using an insulating material.
Claim 5
Dependent Claim
26 words
A semiconductor device as set forth in claim 1, wherein said dummy pattern (8) is formed close to said interconnection (2) and in separated relation thereto.
Claim 6
Dependent Claim
40 words
A semiconductor device as set forth in claim 1, wherein said dummy pattern (8) is formed around the outer periphery of an interconnection (2) whose width is more than twice the thickness of an insulating film to be formed thereon.
Claim 7
Independent Claim
59 words
A method of forming an insulating film over a raised portion such as an interconnection on a semiconductor substrate by the use of bias sputtering, characterised in that a raised dummy pattern is formed around the outer periphery of the said raised portion and the insulating film is formed over both the raised portion and the raised dummy pattern.
Claim 8
Independent Claim
59 words
A method of forming an insulating film over a raised portion such as an interconnection on a semiconductor substrate by the use of bias sputtering, characterised in that a raised dummy pattern is formed around the outer periphery of the said raised portion and the insulating film is formed over both the raised portion and the raised dummy pattern.
References Cited (Backward Citations)
US3868723A
Cited
GB2088629A
Cited
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