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EP0202089A2 Expired / Lapsed EP ⏱️ 0.0 years remaining

Semiconductor laser

Assignee: Xerox Corp
•
Filing: 1986-05-12
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Granted: —
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Expires: 2006-05-12
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Abstract

Abstract A clad superlattice semiconductor laser is fabricated utilizing impurity-induced disordering (IID) techniques that provides (1) reduction of free carrier absorption in the optical cavity, and (2) the ability selectively to vary the amount of index guiding in the - optical waveguide independent of the properties of the electron-confining multiquantum well structure. The clad superlattice semiconductor laser provides for the inclusion of a superlattice (30) in a cladding layer (20) or region of the laser structure. An effective index waveguide can be realized by selectively disordering the cladding superlattice in regions adjacent to the formed index guide type optical cavity, as long as the superlattice is designed so that the established optical mode significantly overlaps with the disordered superlattice cladding regions, i.e., the evanescent wave propogating in the laser cavity overlaps into regions of the disordered superlattice.

Inventors

  • 👤 Robert L. Thornton

Bibliographic Details

Application Number —
Jurisdiction EP
Data Source google_patents
Last Synchronized 2026-10-29 18:51
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/20; B; B82; B82Y; B82Y20/00; H01S5/2004; H01S5/2009; H01S5/2013; H01S5/2054; H01S5/2059; H01S5/30; H01S5/32; H01S5/3211; H01S5/3216; H01S5/34; H01S5/343; H01S5/34313; H01S5/3432

Claims Analysis

Total Claims: 13
Claim 1
Independent Claim 119 words
A clad superlattice semiconductor laser (10) comprising a plurality of planar semiconductor layers, one or more of the layers forming an active region (16) for light wave generation and propoga- tion under lasing conditions in a confined optical cavity which includes the active region, a cladding layer (14, 18) formed on adjacent sides of said active region, a supertattice (20) formed as part of at least one of said cladding layers and comprising alternating layers of wells and barriers, impurity-induced disordered regions (30) of the superlattice on adjacent sides of a region to be established for the optical cavity, the disordering providing the regions with a resultant lower refractive index compared with the refractive index of the optical cavity.
Claim 2
Dependent Claim 119 words
A clad superlattice semiconductor laser (10) comprising a plurality of planar semiconductor layers, one or more of the layers forming an active region (16) for light wave generation and propoga- tion under lasing conditions in a confined optical cavity which includes the active region, a cladding layer (14, 18) formed on adjacent sides of said active region, a supertattice (20) formed as part of at least one of said cladding layers and comprising alternating layers of wells and barriers, impurity-induced disordered regions (30) of the superlattice on adjacent sides of a region to be established for the optical cavity, the disordering providing the regions with a resultant lower refractive index compared with the refractive index of the optical cavity.
Claim 3
Dependent Claim 35 words
The laser of claim 1, wherein the laser includes two superlattices (30, 60) each superlattice being part of a cladding layer (48) on adjacent major surfaces of the active region, and having impurity-induced disordered regions.
Claim 4
Dependent Claim 18 words
The laser of claim 1 or 2, wherein the impurity-induced disordering does not extend into the active region.
Claim 5
Dependent Claim 43 words
The laser of any preceding claim, wherein a cladding layer (18) is formed between the active region and the superiattice, the strength of optical coupling between the active region and the superlattice being controlled by the thickness and composition of the cladding layer.
Claim 6
Dependent Claim 14 words
The laser of any preceding claim, wherein the impurity-induced disordering is accomplished by diffusion.
Claim 7
Dependent Claim 21 words
The laser of any of claims 1 to 4, wherein the impurity-induced disordering is accomplished by implant followed by an anneal.
Claim 8
Dependent Claim 16 words
The laser of any preceding claim, wherein current confinement means (28) is formed in the laser.
Claim 9
Dependent Claim 14 words
The laser of claim 7, wherein the current confinement means comprises a proton implant.
Claim 10
Dependent Claim 24 words
The laser of any preceding claim, wherein the superlattice (20) is formed between adjacent cladding layers (18.21) on one side of the active region.
Claim 11
Dependent Claim 15 words
The laser of any preceding claim, wherein the active region is a single active layer.
Claim 12
Dependent Claim 19 words
The laser of any one of claims 1 through 8, wherein the active region is a single quantum well.
Claim 13
Dependent Claim 19 words
The laser of any one of claims 1 through 8, wherein the active region is a multiple quantum well.

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