EP0199293A2
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Insulated gate semiconductor device
Assignee: General Electric Co
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Filing: 1986-04-17
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Granted: —
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Expires: 2006-04-17
Abstract
Abstract An insulated gate semiconductor device includes an inherent bipolar transistor having an emitter region which is relatively lightly doped in comparison to prior art devices. This reduces the tendency of such bipolar transistor to turn-on, which might harm the device. The beneficial effects of lightly doping the emitter region may be enhanced by decreasing the emitter region depth.
Inventors
- 👤 Bantval Jayant Baliga
- 👤 Tat-Sing Paul Chow
- 👤 Victor Albert Keith Temple
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-28 20:31
CPC Classifications
H; H10; H10D; H10D12/00; H10D12/411; H10D12/441; H10D12/01; H10D30/00; H10D30/60; H10D30/64; H10D30/66; H10D62/00; H10D62/10; H10D62/124; H10D62/126; H10D62/127; H10D62/13; H10D62/149; H10D62/151
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
75 words
A semiconductor device comprising: a semiconductor drift region of a first conductivity type; a semiconductor base region of a second conductivity type adjoining said drift region; a semiconductor emitter region of said first conductivity type adjoining said base region; a gate electrode insulatingly spaced from said base region; and said emitter region having a surface dopant concentration not greater than one hundred and fifty times higher than the surface dopant concentration of said base region.
Claim 2
Dependent Claim
75 words
A semiconductor device comprising: a semiconductor drift region of a first conductivity type; a semiconductor base region of a second conductivity type adjoining said drift region; a semiconductor emitter region of said first conductivity type adjoining said base region; a gate electrode insulatingly spaced from said base region; and said emitter region having a surface dopant concentration not greater than one hundred and fifty times higher than the surface dopant concentration of said base region.
Claim 3
Dependent Claim
39 words
The device of Claim 1 and further including an emitter electrode contacting said emitter region; and said surface dopant concentration of said emitter region being sufficient to establish an ohmic contact between said emitter region and said emitter electrode.
Claim 4
Dependent Claim
28 words
The device of Claim 2 and further including: a collector region of said second conductivity type adjoining said drift region; and a collector electrode contacting said collector region.
Claim 5
Dependent Claim
35 words
The device of Claim 2 wherein: said base, emitter and drift regions comprise silicon semiconductor material; and said surface dopant concentration of said emitter region does not exceed 5x10 19 dopant atoms per cubic centimeter.
Claim 6
Dependent Claim
29 words
The device of Claim 4 wherein said surface dopant concentration of said emitter region is in the range of 10 17 - 10 19 dopant atoms per cubic centimeter.
Claim 7
Dependent Claim
30 words
The device of Claim 5 and further including: a silicon semiconductor collector region of said second conductivity type adjoining said drift region; and a collector electrode contacting said collector region.
Claim 8
Dependent Claim
27 words
The device of Claim 1 wherein: said base, emitter and drift regions comprise silicon semiconductor material; and said emitter region is less than 1 micron in depth.
Claim 9
Dependent Claim
39 words
The device of Claim 7 and further including an emitter electrode contacting said emitter region; and said surface dopant concentration of said emitter region being sufficient to establish an ohmic contact between said emitter region and said emitter electrode.
Claim 10
Dependent Claim
24 words
The device of Claim 8 wherein said surface dopant concentration of said emitter region does not exceed Sx10 19 dopant atoms per cubic centimeter.
Claim 11
Dependent Claim
29 words
The device of Claim 9 wherein said surface dopant concentration of said emitter region is in the range of 10 17 - 10 19 dopant atoms per cubic centimeter.
Claim 12
Independent Claim
29 words
The device of Claim-10 and further including: a silicon semiconductor collector region of said second conductivity type adjoining said drift region; and a collector electrode contacting said collector region.
Claim 13
Dependent Claim
30 words
The device of Claim 7 and further including: a silicon semiconductor collector region of said second conductivity type adjoining said drift region; and a collector electrode contacting said collector region.
References Cited (Backward Citations)
No citation records indexed.
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