EP0198976A2
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Process for formation of insulating layer of silylated polysilsesquioxane on electronic circuit board
Assignee: Fujitsu Ltd
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Filing: 1985-10-31
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Granted: —
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Expires: 2005-10-31
Abstract
Abstract A lower alkyl polysilsesquioxane having a general formula wherein R is lower alkyl, preferably CH 3 or C 2 H 5 , and n is an integer equal to about 50 to about 10,000, prepared by (a) dissolving a lower alkyl trifunctional silane in an organic solvent at a temperature of -20°C to -50°C to form an organic solution thereof; (b) hydrolysing the lower alkyl trifunctional silane by dropping water into the organic solution at a temperature of -20°C to -50°C under an inert gas pressurised at 1,000 to 3,000 Pa; and (c) gradually heating the organic solution together with a water phase lying therebeneath up to a temperature of 60°C to 100°C under an inert gas pressurised at 1,000 to 3,000 Pa. Also, a flat surfaced insulating layer of a silylated organopolysilsesquioxane having a general formula wherein R' and R 2 are each selected from alkyl and phenyl (preferably methyl or ethyl), and n is an integer equal to about 50 to about 2,000, preferably about 50 to about 500, formed on a circuit board having stepwise differences in height thereon, by applying an organic solution of the polymer; evaporating the solvent; and melting the polymer to flatten the surface of the polymer and curing the polymer.
Inventors
- 👤 Shun-Ichi Fukuyama
- 👤 Yasuhiro Yoneda
- 👤 Masashi Miyagawa
- 👤 Kota Nishii
- 👤 Azuma Matsuura
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-03 16:30
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/692; H10P14/6921; H10P14/6922; H10P14/6926; C; C08; C08G; C08G77/00; C08G77/04; C08G77/06; H01; H01B; H01B3/00; H01B3/18; H01B3/30; H01B3/46; H10W; H10W70/00; H10W70/60; H10W70/67; H10W70/69; H10W99/00; H05; H05K; H05K3/00; H05K3/46; H05K3/4644; H05K3/4673; H05K3/4676; H10P14/63; H10P14/6326; H10P14/6342; H10P14/66; H10P14/668; H10P14/6681; H10P14/6684; H10P14/6686; Y; Y10; Y10S; Y10S428/00; Y10S428/90; Y10S428/901; Y10T; Y10T428/00; Y10T428/31504; Y10T428/31652; Y10T428/31663; Y10T428/31678
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
131 words
A process for preparing a lower alkyl polysilsesquioxane having a general formula wherein R is lower alkyl and n is an integer equal to about 50 to about 10,000, comprising hydrolysing a lower alkyl trifunctional silane with water, characterised in that the process comprises: (a) dissolving the lower alkyl trifunctional silane in an organic solvent at a temperature of -20°C to -50°C to form an organic solution thereof; (b) hydrolysing said lower alkyl trifunctional silane by dropping water into said organic solution at a temperature of -20°C to -50°C under an inert gas pressurised at 1,000 to 3,000 Pa; and (c) gradually heating said organic solution together with a water phase lying therebeneath up to a temperature of 60°C to 100°C under an inert gas pressurised at 1,000 to 3,000 Pa.
Claim 2
Dependent Claim
131 words
A process for preparing a lower alkyl polysilsesquioxane having a general formula wherein R is lower alkyl and n is an integer equal to about 50 to about 10,000, comprising hydrolysing a lower alkyl trifunctional silane with water, characterised in that the process comprises: (a) dissolving the lower alkyl trifunctional silane in an organic solvent at a temperature of -20°C to -50°C to form an organic solution thereof; (b) hydrolysing said lower alkyl trifunctional silane by dropping water into said organic solution at a temperature of -20°C to -50°C under an inert gas pressurised at 1,000 to 3,000 Pa; and (c) gradually heating said organic solution together with a water phase lying therebeneath up to a temperature of 60°C to 100°C under an inert gas pressurised at 1,000 to 3,000 Pa.
Claim 3
Dependent Claim
13 words
A process according to claim 1 in which R is methyl or ethyl.
Claim 4
Dependent Claim
35 words
A process according to claim 2, wherein said lower alkyl polysilsesquioxane is methyl polysilsesquioxane, the weight average molecular weight of which is about 6.7 x 10 3 to about 1.34 x 1 0 6 .
Claim 5
Dependent Claim
35 words
A process according to claim 2, wherein said lower alkyl polysilsesquioxane is ethyl polysilsesquioxane, the weight average molecular weight of which is about 8.2 x 10 3 to about 1.62 x 1 0 6 .
Claim 6
Dependent Claim
96 words
A process for forming a flat surfaced insulating layer of a polysilsesquioxane on a circuit board having stepwise differences in height thereon, characterised in that it comprises: applying onto the board an organic solution of a silylated lower alkyl polysilsesquioxane having a general formula wherein R1 and R 2 are each selected from alkyl and phenyl groups, and n is an integer equal to about 50 to about 2,000, preferably about 50 to about 500; evaporating the solvent; and melting said silylated lower alkyl polysilsesquioxane to flatten the surface of said polymer and curing the polymer.
Claim 7
Dependent Claim
96 words
A process for forming a flat surfaced insulating layer of a polysilsesquioxane on a circuit board having stepwise differences in height thereon, characterised in that it comprises: applying onto the board an organic solution of a silylated lower alkyl polysilsesquioxane having a general formula wherein R1 and R 2 are each selected from alkyl and phenyl groups, and n is an integer equal to about 50 to about 2,000, preferably about 50 to about 500; evaporating the solvent; and melting said silylated lower alkyl polysilsesquioxane to flatten the surface of said polymer and curing the polymer.
Claim 8
Dependent Claim
22 words
A process according to claim 5 in which the groups R 1 and R 2 are each selected from methyl and ethyl.
Claim 9
Dependent Claim
50 words
A process according to claim 6 wherein said silylated lower alkyl polysilsesquioxane is methyl polysilsesquioxane having trimethyl silyl end groups, the weight average molecular weight of which is about 7.0 x 10 3 to about 2.7 x 10 5 preferably about 7.0 x 10 to about 6.7 x 10 .
Claim 10
Dependent Claim
54 words
A process according to claim 6 wherein said silylated lower alkyl polysilsesquioxane is ethyl polysilsesquioxane having triethyl silylated end groups, the weight average molecular weight of which is about 8.4 x 1 0 3 to about 3.2 x 10 5 , preferably about 8.4 to 10 3 to about 8.1 x 10 4 .
Claim 11
Dependent Claim
18 words
A proces according to any of claims 5 to 8 wherein said insulating layer is a passivation film.
Claim 12
Dependent Claim
35 words
A process according to any of claims 5 to 9 wherein said insulating layer is a layer insulating layer, having an insulating layer of an inorganic material thereon, thereby forming a double layered insulating layer.
References Cited (Backward Citations)
No citation records indexed.
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