EP0198656A2
Expired / Lapsed
EP
⏱️ 0.0 years remaining
A semiconductor laser device
Assignee: Sharp Corp
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Filing: 1986-04-09
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Granted: —
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Expires: 2006-04-09
Abstract
Abstract A semiconductor laser device comprises an active layer (3), a current blocking striped-channel (7) formed below said active layer in such a manner that light in the active layer for laser oscillation is absorbed by both shoulders of said striped channel, resulting in an index-guided optical waveguide within the active layer, and mesa-channels (8) formed outside of said optical waveguide in a manner to cut off the active layer, the distance (W) between the mesa-channels (8) being greater than that (w) between the shoulders of said striped channel (7).
Inventors
- 👤 Saburo Yamamoto
- 👤 Hiroshi Hayashi
- 👤 Taiji Morimoto
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-31 16:22
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/20; H01S5/24; H01S5/22; H01S5/227; H01S5/2275; H01S5/2277
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
92 words
A semiconductor laser device characterised in that it comprises an active layer (3), a current blocking striped-channel (7) formed below said active layer in such a manner that light in the active layer for laser oscillation is absorbed by both shoulders of said striped channel, resulting in an index-guided optical waveguide within the active layer, and mesa-channels (8) formed outside of said-optical waveguide in a manner to cut off the active layer, the distance (W) between the mesa-channels (8) being greater than that (w) between the shoulders of said striped channel (7).
Claim 2
Dependent Claim
92 words
A semiconductor laser device characterised in that it comprises an active layer (3), a current blocking striped-channel (7) formed below said active layer in such a manner that light in the active layer for laser oscillation is absorbed by both shoulders of said striped channel, resulting in an index-guided optical waveguide within the active layer, and mesa-channels (8) formed outside of said-optical waveguide in a manner to cut off the active layer, the distance (W) between the mesa-channels (8) being greater than that (w) between the shoulders of said striped channel (7).
Claim 3
Dependent Claim
17 words
A semiconductor laser device as claimed in claim 1, characterised in that said mesa-channels (8) are void.
Claim 4
Dependent Claim
34 words
A semiconductor laser device as claimed in claim 1, characterised in that a burying layer (11) having a greater energy gap than the active layer (3) is disposed in each of said mesa-channels (8).
References Cited (Backward Citations)
No citation records indexed.
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