EP0197738A2
Expired / Lapsed
EP
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Method for manufacturing an LDD semiconductor device
Assignee: Toshiba Corp
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Filing: 1986-03-27
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Granted: —
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Expires: 2006-03-27
Abstract
Abstract An LDD semiconductor device as a semiconductor substrate (11) of a first conductivity type; mutually electrically isolated source and drain regions (22, 23) of a second conductivity type provided on the surface of said substrate (11) with a channel region contained therebetween; an insulating film (16) provided on the surface of said substrate; a gate electrode (15) provided on said film; a first layer (17) formed on said gate electrode with an oxidation rate substantially slower than that of said gate electrode; a first oxide layer (24) formed on the lateral face of said gate electrode (15);. a second oxide layer (25) formed on said semiconductor substrate (11); a first impurity diffusion region (18, 19) of a second conductive type provided adjacent to the end portion of said gate electrode (15) in said source and drain regions under said first oxide layer (24); and second impurity diffusion region (20, 21) having a concentration higher than that of said first impurity region, provided in said substrate at a position adjoining said first impurity diffusion region under said second oxide layer (25).
Inventors
- 👤 Riichirou C/O Patent Division Aoki
- 👤 Katsuya C/O Patent Division Okumura
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-30 01:53
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/60; H10D30/601; H10P; H10P95/00; H10D30/01; H10D30/021; H10D30/0223; H10D30/0227; H10D64/00; H10D64/60; H10D64/66; H10D64/661; H10D64/662; H10D64/663; H10P14/00; H10P14/40; H10P14/412
Claims Analysis
Total Claims: 19
Claim 1
Independent Claim
191 words
A semiconductor device comprising: a semiconductor substrate (11) of a first conductivity type; source and drain regions (22, 23) of a second conductivity type provided on the surface of said substrate, said regions being electrically isolated from one another; a channel region between said source and drain regions (22, 23); an insulating film (16) formed on the surface of said substrate; a gate electrode (15) provided on said insulating film: characterized by a first layer (117) formed on said gate electrode with an oxidation rate substantially lower than that of said gate electrode (15): a first oxide layer (24) formed on the lateral face of said gate electrode; a second oxide layer (25) formed on said semiconductor substrate; a first impurity diffusion region (18, 19) of a second conductive type, provided adjacent to the end portion of said gate electrode in said source and drain regions under said first oxide layer (24); and a second impurity diffusion region (20, 21) having a higher concentration than that of said first impurity region, provided on the substrate surface at a position adjoining said first impurity diffusion region under said second oxide layer (25).
Claim 2
Dependent Claim
191 words
A semiconductor device comprising: a semiconductor substrate (11) of a first conductivity type; source and drain regions (22, 23) of a second conductivity type provided on the surface of said substrate, said regions being electrically isolated from one another; a channel region between said source and drain regions (22, 23); an insulating film (16) formed on the surface of said substrate; a gate electrode (15) provided on said insulating film: characterized by a first layer (117) formed on said gate electrode with an oxidation rate substantially lower than that of said gate electrode (15): a first oxide layer (24) formed on the lateral face of said gate electrode; a second oxide layer (25) formed on said semiconductor substrate; a first impurity diffusion region (18, 19) of a second conductive type, provided adjacent to the end portion of said gate electrode in said source and drain regions under said first oxide layer (24); and a second impurity diffusion region (20, 21) having a higher concentration than that of said first impurity region, provided on the substrate surface at a position adjoining said first impurity diffusion region under said second oxide layer (25).
Claim 3
Dependent Claim
16 words
A semiconductor device according to claim 1, wherein said first layer (17) has a high conductivity.
Claim 4
Dependent Claim
17 words
A semiconductor device according to claim 1, wherein said first layer (17) consists of a titanium compound.
Claim 5
Dependent Claim
23 words
A semiconductor device according to claim 1, wherein a metal layer is disposed between said gate electrode (15) and said first layer (17).
Claim 6
Dependent Claim
16 words
A semiconductor device according to claim 4 wherein said metal layer consists of a titanium compound.
Claim 7
Dependent Claim
16 words
A semiconductor device according to claim 4 wherein said metal layer consists of a tungsten compound.
Claim 8
Dependent Claim
16 words
A semiconductor device according to claim 4 wherein said metal layer consists of a silicide compound.
Claim 9
Independent Claim
212 words
A method for manufacturing a semiconductor device, comprising the steps of: forming source and drain regions (22, 23) of a second conductivity type provided on the surface of a semiconductor substrate (11) of a first conductivity type, said regions being electrically isolated from one another: forming an insulating film (16) on the surface of said substrate; forming a gate electrode (15) provided on said insulating film; characterized by forming a conductive layer (15) on said insulating film; forming a first layer (17) on said conductive layer with an oxidation rate substantially lower than that of said conductive layer; forming a gate insulating layer (16) and a gate electrode (15) by selectively removing said insulating film, said conductive layer and said first layer; forming a first impurity diffusion region (18, 19) of a second conductivity type in said semiconductor substrate, using said gate electrode (15) as a mask; forming a first oxide layer (24) on the lateral faces of said gate electrode (15) and a second oxide layer (25) on said semiconductor substrate by thermal oxidation; and forming a second impurity diffusion region (20, 21) of a second conductivity type, having a higher concentration than that of said first impurity region, using said gate electrode and said first oxide layer as a mask.
Claim 10
Independent Claim
212 words
A method for manufacturing a semiconductor device, comprising the steps of: forming source and drain regions (22, 23) of a second conductivity type provided on the surface of a semiconductor substrate (11) of a first conductivity type, said regions being electrically isolated from one another: forming an insulating film (16) on the surface of said substrate; forming a gate electrode (15) provided on said insulating film; characterized by forming a conductive layer (15) on said insulating film; forming a first layer (17) on said conductive layer with an oxidation rate substantially lower than that of said conductive layer; forming a gate insulating layer (16) and a gate electrode (15) by selectively removing said insulating film, said conductive layer and said first layer; forming a first impurity diffusion region (18, 19) of a second conductivity type in said semiconductor substrate, using said gate electrode (15) as a mask; forming a first oxide layer (24) on the lateral faces of said gate electrode (15) and a second oxide layer (25) on said semiconductor substrate by thermal oxidation; and forming a second impurity diffusion region (20, 21) of a second conductivity type, having a higher concentration than that of said first impurity region, using said gate electrode and said first oxide layer as a mask.
Claim 11
Dependent Claim
28 words
A method for manufacturing a semiconductor device according to claim 8, wherein said first layer (17) is removed after forming said first and second oxide layers (24, 25).
Claim 12
Dependent Claim
20 words
A method for manufacturing a semiconductor device according to claim 8, wherein said first layer (17) has a high conductivity.
Claim 13
Dependent Claim
21 words
A method for manufacturing a semiconductor device according to claim 8, wherein said first layer (17) consists of a titanium compound.
Claim 14
Dependent Claim
28 words
A method for manufacturing a semiconductor device according to claim 8 further comprising the step of forming a metal layer between said conductive layer and said first layer.
Claim 15
Dependent Claim
19 words
A method for manufacturing a semiconductor device according to claim 12 wherein said metal layer comprises a titanium compound.
Claim 16
Dependent Claim
19 words
A method for manufacturing a semiconductor device according to claim 12 wherein said metal layer comprises a tungsten compound.
Claim 17
Dependent Claim
19 words
A method for manufaturing a semiconductor device according to claim 12 wherein said metal layer comprises a silicide compound.
Claim 18
Dependent Claim
32 words
A method for manufacturing a semiconductor device according to claim 8, wherein said first layer (17) consists of a tungsten nitride and is removed after forming said first and second oxide layers.
Claim 19
Dependent Claim
32 words
A method for manufacturing a semiconductor device according to claim 8, wherein said first layer (17) consists of a tantalum nitride and is removed after forming said first and second oxide layers.
References Cited (Backward Citations)
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