EP0197531A2
Expired / Lapsed
EP
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Thin film transistor formed on insulating substrate
Assignee: Hitachi Ltd
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Filing: 1986-04-07
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Granted: —
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Expires: 2006-04-07
Abstract
Abstract A thin film transistor formed on an insulating substrate (1, 11) is disclosed in which metal silicide layers (10a, 10b; 15, 16) are formed in a thin film (2, 12) made of a monocrystalline, polycrystalline, or amorphous semiconductor material, to be used as source and drain regions, and further a gate electrode includes a metal silicide layer (10c, 17).
Inventors
- 👤 Akio Mimura
- 👤 Yoshikazu Hosokawa
- 👤 Takaya Suzuki
- 👤 Takashi Aoyama
- 👤 Nobutake Konishi
- 👤 Yutaka Misawa
- 👤 Kenji Miyata
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-31 00:31
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/01; H10D30/021; H10D30/031; H10D30/0312; H10D30/0314; H10D30/0321; H10D30/60; H10D30/67; H10D30/6729; H10D30/673; H10D30/6731; H10D30/6737; H10D30/6739; H10D30/674; H10D30/6741; H10D30/6743; H10D30/6745; H10D62/00; H10D62/80; H10D62/83; H10D64/00; H10D64/60; H10D64/62
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
162 words
1 . A thin film transistor formed on an insulating substrate, comprising: an insulating substrate (1, 11); a thin semiconductor film (2, 12) formed on said insulating substrate and having the form of an island; a gate electrode (10c; 14, 17) formed on a gate insulating film (3, 13), said gate insulating film being formed on said thin semiconductor film; and a pair of chemical compound layers (10a, 10b; 15, 16) formed in said thin semiconductor film (2, 12) so that a portion of said thin semiconductor film which exists beneath said gate insulating film (3, 13) is sandwiched between said chemical compound layers (10a, 10b; 15, 16) and each of said chemical compound layers is insulated from said gate electrode (10c, 14, 17) by said gate insulating film (3, 13), each of said chemical compound layers (10a, 10b; 15, 16) being made of chemical compound constituted of a metal and a semiconductor material for forming said thin semiconductor film (2, 12).
Claim 2
Dependent Claim
162 words
1 . A thin film transistor formed on an insulating substrate, comprising: an insulating substrate (1, 11); a thin semiconductor film (2, 12) formed on said insulating substrate and having the form of an island; a gate electrode (10c; 14, 17) formed on a gate insulating film (3, 13), said gate insulating film being formed on said thin semiconductor film; and a pair of chemical compound layers (10a, 10b; 15, 16) formed in said thin semiconductor film (2, 12) so that a portion of said thin semiconductor film which exists beneath said gate insulating film (3, 13) is sandwiched between said chemical compound layers (10a, 10b; 15, 16) and each of said chemical compound layers is insulated from said gate electrode (10c, 14, 17) by said gate insulating film (3, 13), each of said chemical compound layers (10a, 10b; 15, 16) being made of chemical compound constituted of a metal and a semiconductor material for forming said thin semiconductor film (2, 12).
Claim 3
Dependent Claim
29 words
A thin. film transistor according to Claim 1, wherein said thin semiconductor film (2, 12) is in one of a monocrystalline state, a polycrystalline state and an amorphous state.
Claim 4
Dependent Claim
34 words
A thin film transistor according to Claim 1, wherein said thin semiconductor film (2, 12) is made of one material selected from a group consisting of silicon, germanium, tellurium and a compound semiconductor material.
Claim 5
Dependent Claim
38 words
A thin film transistor according to Claim 1, wherein a metal for making said chemical compound layers (10a, 10b; 15, 16) is selected from a group consisting of platinum, molybdenum, tungsten, titanium, palladium and mixtures of these metals.
Claim 6
Dependent Claim
25 words
A thin film transistor according to Claim 1, wherein said gate electrode (10c) is made of a compound of a semiconductor material with a metal.
Claim 7
Dependent Claim
27 words
A thin film transistor according to Claim 5, wherein the metallic constituent of said compound is selected from a group consisting of platinum, molybdenum, tungsten and titanium.
Claim 8
Dependent Claim
40 words
A thin film transistor according to Claim 1, wherein said gate electrode (14, 17) includes the first layer (14) made of a semiconductor material and the second layer (17) made of a compound of said semiconductor material with a metal.
Claim 9
Dependent Claim
24 words
A thin film transistor according to Claim 7, wherein said first layer (14) is in one of a polycrystalline state and an amorphous state.
Claim 10
Dependent Claim
36 words
A thin film transistor according to Claim 7, wherein each of said first layer (14) and said thin semiconductor film (12) is in one of a polycrystalline state and an amorphous state, and moreover contains hydrogen.
Claim 11
Dependent Claim
35 words
A thin film transistor according to Claim 1, wherein said gate electrode (10c; 14, 17) and said chemical compound layers (10a, 10b; 15, 16) serve as conductors for connecting a plurality of thin film transistors.
References Cited (Backward Citations)
No citation records indexed.
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