Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
84 words
A process for electrically interconnecting electronic devices located on a surface with planar layers of conductors and dielectrics, the process comprising: depositing a dielectric on the surface; at-least partially removing the dielectric at selective.locations where the interconnections are to be made; depositing a conductor only where the dielectric was selectively removed in the previous step; and repeating the steps of depositing a dielectric, removing the dielectric deposited in the previous step at selective locations, and depositing a conductor where the dielectric was selectively removed.
Claim 2
Dependent Claim
84 words
A process for electrically interconnecting electronic devices located on a surface with planar layers of conductors and dielectrics, the process comprising: depositing a dielectric on the surface; at-least partially removing the dielectric at selective.locations where the interconnections are to be made; depositing a conductor only where the dielectric was selectively removed in the previous step; and repeating the steps of depositing a dielectric, removing the dielectric deposited in the previous step at selective locations, and depositing a conductor where the dielectric was selectively removed.
Claim 3
Dependent Claim
13 words
A process as in claim 1 wherein the dielectric is a spin-on polymer.
Claim 4
Dependent Claim
16 words
A process as in claim 1 or 2 wherein the dielectric is an oxide of silicon.
Claim 5
Dependent Claim
15 words
A process as in any one of the preceding claims wherein the conductor is tungsten.
Claim 6
Dependent Claim
41 words
A process as in any one of the preceding claims, wherein the step of depositing a conductor comprises: deactivating the exposed side of the dielectric; and depositing the conductor on the surface of the dielectric except where the surface is deactivated.
Claim 7
Dependent Claim
36 words
A process as in anyone of claims 1 to 4 wherein the step of selectively depositing the conductor comprises: activating the locations where the dielectric was selectively removed; and depositing the conductor in the activated locations.
Claim 8
Dependent Claim
29 words
A process as in claims 5 or 6 wherein the step of depositing the conductor comprises exposing the surface to a gas containing WF 6 and H 2 .
Claim 9
Dependent Claim
32 words
A process as in claim 5 wherein the step of deactivating the surface of the dielectric comprises the depositing of compound selected from the group consisting of silicon dioxide and silicon nitride.
Claim 10
Dependent Claim
40 words
A process as in any one of the preceding claims further comprising repeating the steps of depositing a dielectric, removing the dielectric deposited in the previous step at selective locations, and depositing a conductor where the dielectric was selectively removed.