EP0194835A2
Expired / Lapsed
EP
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A semiconductor laser device with a protective film on the facets
Assignee: Sharp Corp
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Filing: 1986-03-10
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Granted: —
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Expires: 2006-03-10
Abstract
Abstract The present invention provides a semiconductor laser device with a protective film (B,F) on the facets (2,5), wherein said protective film is made of a multi-layered dielectric film composed of alternate layers consisting of at least two kinds of dielectric film, one of which is a first dielectric film (31) of low refractive index and the other of which is a dielectric film (42) of high refractive index, said multi-layered dielectric film (F) which covers at least one of the facets (2) being a light-permeable film with a reflectivity of 30% or less.
Inventors
- 👤 Nobuyuki Miyauchi
- 👤 Hiroshi Hayashi
- 👤 Saburo Yamamoto
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-28 13:34
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/02; H01S5/028
Claims Analysis
Total Claims: 3
Claim 1
Independent Claim
91 words
A semiconductor laser device with a protective film (B,F) on the facets (2,5), characterised in that said protective film is made of a multi-layered dielectric film composed of alternate layers consisting of at least two kinds of dielectric film, one of which is a first dielectric film (31) of low refractive index and the other of which is a dielectric film (42) of high refractive index, said multi-layered dielectric film (F) which covers at least one of the facets (2) being a light-permeable film with a reflectivity of 30% or less.
Claim 2
Dependent Claim
91 words
A semiconductor laser device with a protective film (B,F) on the facets (2,5), characterised in that said protective film is made of a multi-layered dielectric film composed of alternate layers consisting of at least two kinds of dielectric film, one of which is a first dielectric film (31) of low refractive index and the other of which is a dielectric film (42) of high refractive index, said multi-layered dielectric film (F) which covers at least one of the facets (2) being a light-permeable film with a reflectivity of 30% or less.
Claim 3
Dependent Claim
42 words
A semiconductor laser device with a protective film on the facets as claimed in claim 1, characterised in that the first dielectric film (31) is made of A1 2 03 and the second dielectric film (42) is made of a-Si:H 2 .
References Cited (Backward Citations)
No citation records indexed.
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