EP0194475A2
Expired / Lapsed
EP
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Semiconductor die attach system
Assignee: Olin Corp
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Filing: 1986-02-18
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Granted: —
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Expires: 2006-02-18
Abstract
Abstract @ A semiconductor die attach system 10 adapted for attaching a semiconductor die 12 to a substrate 14 is provided. A metallic buffer component 20 for dissipating thermal stresses is disposed between the substrate 14 and the semiconductor die 12 to dissipate stresses created from thermal cycling of the substrate and the die. The metallic buffer component 20 is sealed between the substrate and the die with a silver-tin sealing composition. A bonding material 50 may be used alone to bond a die to a substrate and dissipate stresses from thermal cycling.
Inventors
- 👤 Michael J. Pryor
- 👤 Julius C. Fister
- 👤 Narendra N. Singhdeo
- 👤 Deepak Mahulikar
- 👤 Satyam C. Cherukuri
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-26 00:02
CPC Classifications
H; H10; H10W; H10W40/00; H10W40/20; H10W40/25; H10W40/255; H10W40/258; H10W72/00; H10W72/30; H10W70/00; H10W70/60; H10W70/67; H10W70/68; H10W70/682; H10W72/071; H10W72/073; H10W72/07331; H10W72/07336; H10W72/07337; H10W72/351; H10W72/352; H10W72/381; H10W90/00; H10W90/701; H10W90/731; H10W90/734; H10W90/736; H10W90/751; H10W90/756; Y; Y10; Y10T; Y10T428/00; Y10T428/12; Y10T428/12493; Y10T428/12528; Y10T428/12535; Y10T428/12674; Y10T428/12771; Y10T428/12806; Y10T428/12826; Y10T428/12833; Y10T428/12861; Y10T428/12868; Y10T428/12875; Y10T428/12889; Y10T428/12896; Y10T428/12931
Claims Analysis
Total Claims: 24
Claim 1
Independent Claim
101 words
A semiconductor die attach system 10 adapted for attaching a semiconductor die 12 to a substrate 14, characterized by: a substrate 14; a semiconductor die 12; means 16 disposed between and bonded to said substrate 14 and said semiconductor die 12 for dissipating thermal stress from thermal cycling of said substrate and die, the thermal stress dissipating means 16 characterized by: a thin buffer component 20 having a coefficient of thermal expansion of between about 35 x 10-7 to about 100 x 10-7 in/in/°C; and bonding means 18,19 for bonding said metallic buffer component to said substrate and to said die.
Claim 2
Dependent Claim
101 words
A semiconductor die attach system 10 adapted for attaching a semiconductor die 12 to a substrate 14, characterized by: a substrate 14; a semiconductor die 12; means 16 disposed between and bonded to said substrate 14 and said semiconductor die 12 for dissipating thermal stress from thermal cycling of said substrate and die, the thermal stress dissipating means 16 characterized by: a thin buffer component 20 having a coefficient of thermal expansion of between about 35 x 10-7 to about 100 x 10-7 in/in/°C; and bonding means 18,19 for bonding said metallic buffer component to said substrate and to said die.
Claim 3
Dependent Claim
34 words
The die attach system of claim 1 characterized in that said buffer component 20 is constructed of a material selected from the group consisting of tungsten, rhenium, molybdenum, alloys thereof, nickel-iron alloys and ceramics.
Claim 4
Dependent Claim
56 words
The die attach system of claim 1 or 2 characterized in that said bonding means comprises first 18 and second 19 layers of bonding material disposed against opposite bonding surfaces of said buffer component 20, said bonding material being an alloy selected from the group consisting of gold-silicon, gold-tin, silver-tin, silver-antimony-tin, lead-tin, copper-indium and mixtures thereof.
Claim 5
Dependent Claim
53 words
The die attach system of claim 3 further characterized by first and second oxidation resistant layers arranged between said layers of bonding material and said opposite bonding surfaces of said buffer component, said first and second oxidation resistant layers being selected from the group consisting of gold, silver, palladium, platinum and alloys thereof.
Claim 6
Dependent Claim
47 words
The die attach system of claim 4 further characterized by first and second barrier layers arranged between said first and second oxidation resistant layers, respectively, and said buffer component, said first and second barrier layers being selected from the group consisting of nickel, cobalt and alloys thereof.
Claim 7
Dependent Claim
48 words
The die attach system of any one of claims 1 to 5 characterized in that said substrate has a coefficient of thermal expansion of more than about 140 x 10 -7 in/in/°C, said substrate being a material selected from the group consisting of metals, alloys, ceramics and cermets.
Claim 8
Dependent Claim
55 words
The die attach system of any one of claims 4 to 6 characterized in that said substrate has a third oxidation resistant layer on a surface adapted to have the semiconductor die attached thereto, said third oxidation resistant layer being of a material selected from the group consisting gold, silver, palladium, platinum and alloys thereof.
Claim 9
Dependent Claim
41 words
The die attach system of claim 7 further including a third barrier layer between said third oxidation resistant layer and said substrate, said third barrier layer being of a material selected from the group consisting of nickel, cobalt and alloys thereof.
Claim 10
Dependent Claim
126 words
A process adapted to attach a semiconductor die 12 to a substrate 14, characterized by the steps of: providing a substrate 14; disposing a thin buffer component 20 having first and second opposite bonding surfaces upon said substrate for dissipating thermal stress from thermal cycling, said buffer component 20 having a coefficient of thermal expansion of between about 35 x 10 -7 to about 100 x 10 -7 in/in/°C; disposing a first layer 18 of bonding material between the substrate and the first bonding surface of the buffer component 20; disposing a second layer 19 of bonding material on the second bonding surface of said buffer component 20; and heating the layered structure to melt the bonding material and bond the substrate to the buffer component.
Claim 11
Dependent Claim
126 words
A process adapted to attach a semiconductor die 12 to a substrate 14, characterized by the steps of: providing a substrate 14; disposing a thin buffer component 20 having first and second opposite bonding surfaces upon said substrate for dissipating thermal stress from thermal cycling, said buffer component 20 having a coefficient of thermal expansion of between about 35 x 10 -7 to about 100 x 10 -7 in/in/°C; disposing a first layer 18 of bonding material between the substrate and the first bonding surface of the buffer component 20; disposing a second layer 19 of bonding material on the second bonding surface of said buffer component 20; and heating the layered structure to melt the bonding material and bond the substrate to the buffer component.
Claim 12
Dependent Claim
49 words
The process of claim 9 further characterized by the steps of: providing a semiconductor die 12; disposing the semiconductor die on the second layer 19 of bonding material; and heating said layered structure to melt the bonding material and bond the die to the second layer of bonding material.
Claim 13
Dependent Claim
29 words
The process of claim 9 or 10 with said bonding material being an alloy selected from the group consisting of gold-silicon, gold-tin, silver-antimony-tin, silver-tin, lead-tin, copper-indium and mixtures thereof.
Claim 14
Dependent Claim
47 words
The process of any.one of claims 9 to 11 characterizedby including the steps of: selecting said substrate 14 having a coefficient of thermal expansion of more than about 140 x 10 -7 in/in/°C, and selecting said substrate from the group consisting of metals, alloys, ceramics and cermets.
Claim 15
Dependent Claim
127 words
A semiconductor die attach system adapted for attaching a semiconductor die 12"' to a metallic substrate 14"', characterized by: a substrate 14"'; a semiconductor die 12"'; means 50 disposed between and bonded to said substrate 14"' and said semiconductor die 12"' for dissipating thermal stress from thermal cycling of said substrate and die, said thermal stress dissipating means comprising a layer of bonding material disposed between and bonded to said substrate and said semiconductor die, said bonding material selected from the group consisting essentially of about 20 to about 40 wt. % silver and the balance essentially tin, of about 5 to about 20 wt. % copper and the balance essentially indium and of about 2 to about 20 wt. % lead and the balance essentially tin.
Claim 16
Dependent Claim
127 words
A semiconductor die attach system adapted for attaching a semiconductor die 12"' to a metallic substrate 14"', characterized by: a substrate 14"'; a semiconductor die 12"'; means 50 disposed between and bonded to said substrate 14"' and said semiconductor die 12"' for dissipating thermal stress from thermal cycling of said substrate and die, said thermal stress dissipating means comprising a layer of bonding material disposed between and bonded to said substrate and said semiconductor die, said bonding material selected from the group consisting essentially of about 20 to about 40 wt. % silver and the balance essentially tin, of about 5 to about 20 wt. % copper and the balance essentially indium and of about 2 to about 20 wt. % lead and the balance essentially tin.
Claim 17
Dependent Claim
27 words
The die attach system of claim 13 characterized in that said layer of bonding material 50 has a thickness of between about 1 to about 15 mils.
Claim 18
Dependent Claim
67 words
The die attach system of claim 13 or 14 characterized in that said substrate 14"' and said semiconductor die 12"' have first and second oxidation resistant layers, respectively, arranged between said substrate and said die and said bonding material to enhance bonding to said bonding material, said first and second oxidation resistant layers being selected from the group consisting of gold, silver, palladium, platinum and alloys thereof.
Claim 19
Dependent Claim
31 words
The die attach system of any of claims 13 to 15 characterized in that said substrate consists of a material selected from the group consisting of metals, alloys, ceramics and cermets.
Claim 20
Dependent Claim
43 words
The die attach system of claim 15 or 16 further characterized by a barrier layer disposed between said first oxidation resistant layer and said substrate, said barrier layer being of a material selected from the group consisting of nickel, cobalt and alloys thereof.
Claim 21
Dependent Claim
134 words
A process adapted to attach a semiconductor die to a substrate, characterized by the steps of: providing a substrate 14"'; providing a semiconductor die 12"'; bonding the substrate to the die with a layer of bonding material 50 to dissipate thermal stress from thermal cycling of the substrate and die, said bonding material selected from the group consisting essentially of about 20 to about 40 wt. % silver and the balance essentially tin, of about 5 to about 20 wt. % copper and the balance essentially indium and of about 2 to about 20 wt. % lead and the balance essentially tin; heating the structure comprising the substrate, bonding material and die to a temperature where the bonding material melts; and cooling the structure whereby the bonding material bonds the substrate to the die.
Claim 22
Dependent Claim
134 words
A process adapted to attach a semiconductor die to a substrate, characterized by the steps of: providing a substrate 14"'; providing a semiconductor die 12"'; bonding the substrate to the die with a layer of bonding material 50 to dissipate thermal stress from thermal cycling of the substrate and die, said bonding material selected from the group consisting essentially of about 20 to about 40 wt. % silver and the balance essentially tin, of about 5 to about 20 wt. % copper and the balance essentially indium and of about 2 to about 20 wt. % lead and the balance essentially tin; heating the structure comprising the substrate, bonding material and die to a temperature where the bonding material melts; and cooling the structure whereby the bonding material bonds the substrate to the die.
Claim 23
Dependent Claim
26 words
The process of claim 18 characterized by the step of providing said layer of bonding material having a thickness between about I to about 15 mils.
Claim 24
Dependent Claim
44 words
The processof claim 18 or 19 characterized by the steps of: selecting said substrate 14"' having a coefficient of thermal expansion of more than about 140 x 10 -7 in/in/°C, and selecting said substrate from the group consisting of metals, alloys, ceramics and cermets.
References Cited (Backward Citations)
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