EP0194061A2
Expired / Lapsed
EP
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Improvements in semiconductor structures and devices
Assignee: Tokyo Institute of Technology
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Filing: 1986-02-14
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Granted: —
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Expires: 2006-02-14
Abstract
Abstract An artifical semiconductor (1) is composed a of multilayer structure with thin films of metal (1a) or insulator (1b) or semiconductor in alternation. The semiconductor (1) is combined with one or more other bodies (2, 3, 5) which may be of similar multi-layered construction but with a different period or film thickness to provide a diode, a transistor or an amplifying device with a high speed response to millimeter waves.
Inventors
- 👤 Yasuharu Suematsu
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-03 19:22
CPC Classifications
H; H10; H10D; H10D8/00; H10D8/70; H10D48/00; H10D48/30; H10D48/32; H10D48/36; H10D48/362; H10D62/00; H10D62/80; H10D62/81; H10D62/815; H10D62/8161; H10D62/8162
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
31 words
An artificial semiconductor composed of alternate layers of thin metal films (la) and thin insulator films (lb) or thin semiconductor films and thin metal films (la) or thin insulator films (lb).
Claim 2
Dependent Claim
31 words
An artificial semiconductor composed of alternate layers of thin metal films (la) and thin insulator films (lb) or thin semiconductor films and thin metal films (la) or thin insulator films (lb).
Claim 3
Dependent Claim
27 words
A semiconductor according to claim 1, wherein the thickness of each type of film (la, lb) is the same as all the other films of that type.
Claim 4
Dependent Claim
79 words
A diode composed of a first artificial semiconductor body (1) and a second artificial semiconductor body (2) each semiconductor body (1, 2) being composed of alternate layers of thin metal films (la) and thin insulator films (lb) or thin semiconductor films and thin films metal (la) or thin insulator films (lb); wherein the thickness of the films (la, lb) of the first body (1) is different to the thickness of the films (2a, 2b) of the second body (2).
Claim 5
Dependent Claim
79 words
A diode composed of a first artificial semiconductor body (1) and a second artificial semiconductor body (2) each semiconductor body (1, 2) being composed of alternate layers of thin metal films (la) and thin insulator films (lb) or thin semiconductor films and thin films metal (la) or thin insulator films (lb); wherein the thickness of the films (la, lb) of the first body (1) is different to the thickness of the films (2a, 2b) of the second body (2).
Claim 6
Dependent Claim
56 words
A transistor composed of three semiconductor bodies (1, 2, 3) at least one of the bodies (2) being sandwiched between the other two bodies (1, 3) and being composed of alternate layers of thin metal films (la) and thin insulator films (lb) or thin semiconductor films and thin metal films (la) or thin insulator films (lb).
Claim 7
Dependent Claim
56 words
A transistor composed of three semiconductor bodies (1, 2, 3) at least one of the bodies (2) being sandwiched between the other two bodies (1, 3) and being composed of alternate layers of thin metal films (la) and thin insulator films (lb) or thin semiconductor films and thin metal films (la) or thin insulator films (lb).
Claim 8
Dependent Claim
60 words
A transistor composed of three bodies (2, 5, 5) one of the bodies (2) being sandwiched between the other two bodies (5, 5) and being in the form of an artificial semiconductor composed of alternate layers of thin metal films (la) and thin insulator films (lb) or thin semiconductor films and thin metal films (la) or thin insulator films (lb).
Claim 9
Dependent Claim
60 words
A transistor composed of three bodies (2, 5, 5) one of the bodies (2) being sandwiched between the other two bodies (5, 5) and being in the form of an artificial semiconductor composed of alternate layers of thin metal films (la) and thin insulator films (lb) or thin semiconductor films and thin metal films (la) or thin insulator films (lb).
Claim 10
Dependent Claim
17 words
A transistor according to claim 5, wherein the other two bodies are thick metal films (5, 5).
Claim 11
Dependent Claim
32 words
A transistor according to claim 4, 5 or 6, wherein the central artificial semiconductor body (2) has its dimensions and relative disposition in the order of the mean free path of electrons.
Claim 12
Dependent Claim
83 words
An electron amplifing device comprising three semiconductor bodies (1, 2, 3) each body being a thin film multi-layer structure, formed from a plurality of layers (la, lb, 2a, 2b, 3a, 3b) of two kinds of thin film materials selected from metals, insulators or semiconductors, each body (1, 2, 3) having a different period (e); wherein one of the bodies (2) is interposed between the other two bodies (1, 3) and has its dimensions in the order of the mean free path of electrons.
Claim 13
Dependent Claim
83 words
An electron amplifing device comprising three semiconductor bodies (1, 2, 3) each body being a thin film multi-layer structure, formed from a plurality of layers (la, lb, 2a, 2b, 3a, 3b) of two kinds of thin film materials selected from metals, insulators or semiconductors, each body (1, 2, 3) having a different period (e); wherein one of the bodies (2) is interposed between the other two bodies (1, 3) and has its dimensions in the order of the mean free path of electrons.
Claim 14
Dependent Claim
81 words
An electron amplifying device comprising an artificial semiconductor body of thin film multi-layered structure composed of alternate layers of thin metal films (la) and thin insulator films (lb) or thin semiconductor films and thin metal films (la) or thin insulator films (lb) and two thick metal films (5) provided on opposite sides of the semiconductor body (2) to sandwich the latter therebetween, wherein the artificial semiconductor body (2) has its dimensions in the order of the mean free path of electrons.
Claim 15
Dependent Claim
81 words
An electron amplifying device comprising an artificial semiconductor body of thin film multi-layered structure composed of alternate layers of thin metal films (la) and thin insulator films (lb) or thin semiconductor films and thin metal films (la) or thin insulator films (lb) and two thick metal films (5) provided on opposite sides of the semiconductor body (2) to sandwich the latter therebetween, wherein the artificial semiconductor body (2) has its dimensions in the order of the mean free path of electrons.
Claim 16
Dependent Claim
53 words
A device according to claim 8 or 9 and further comprising a waveguide for coupling an input signal to one of the bodies (2) or thick films (5) and a waveguide coupled to another of the bodies (3) or thick films (5) for providing an amplified output signal with a high speed response.
References Cited (Backward Citations)
No citation records indexed.
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