EP0192488A2
Expired / Lapsed
EP
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Semiconductor sensor and method of manufacturing the same
Assignee: Toshiba Corp
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Filing: 1986-02-20
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Granted: —
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Expires: 2006-02-20
Abstract
Abstract In a semiconductor sensor, the surfaces of first and second semiconductor substractes (41, 42) of a first conductivity type are made into flat surfaces by polishing the surfaces and are contacted each other so that the both substrates (41, 42) are bonded together. Source and claim regions (44, 45) are formed by diffusing an impurity of second conductivity type. The source and claim regions (44, 45) are separated through a through hole (53) formed in the second substrate (42) and are extended along the surface of the second substrate (42). An insulative layer (56) is formed on the opposite surface of the second substrate (42) and an inner surface of the through hole.
Inventors
- 👤 Tadashi C/O Patent Division Sakai
- 👤 Masaki C/O Patent Division Katsura
- 👤 Hideaki C/O Patent Division Hiraki
- 👤 Shigeki C/O Patent Division Uno
- 👤 Masaru C/O Patent Division Shimbo
- 👤 Kazuyoshi C/O Patent Division Furukawa
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-31 19:28
CPC Classifications
H; H10; H10P; H10P10/00; H10P10/12; H10P10/128; G; G01; G01N; G01N27/00; G01N27/26; G01N27/403; G01N27/414
Claims Analysis
Total Claims: 32
Claim 1
Independent Claim
101 words
A semiconductor sensor characterized by comprising: a first semiconductor substrate (41) of a first conductivity type having one surface and an opposite surface; a second semiconductor substrate ( 4 2) of the first conductivity type having one surface and an opposite surface, the one surface thereof being placed in contact with that of said first semiconductor substrate and saia first and second semiconductor substrates (41, 42) being directly bonded together; a sensor region (41, 44, 45, 46, 95) formed in one of said first and second semiconductor substrates; and a first insulative layer (83) formed on at least said sensor region.
Claim 2
Dependent Claim
101 words
A semiconductor sensor characterized by comprising: a first semiconductor substrate (41) of a first conductivity type having one surface and an opposite surface; a second semiconductor substrate ( 4 2) of the first conductivity type having one surface and an opposite surface, the one surface thereof being placed in contact with that of said first semiconductor substrate and saia first and second semiconductor substrates (41, 42) being directly bonded together; a sensor region (41, 44, 45, 46, 95) formed in one of said first and second semiconductor substrates; and a first insulative layer (83) formed on at least said sensor region.
Claim 3
Dependent Claim
20 words
A sensor according to claim 1, characterized in that said first and second semiconductor substrates (41, 42) are silicon substrates.
Claim 4
Dependent Claim
50 words
A sensor according to claim 1, characterized by further comprising: a silicon oxide layer (43) formed on at least one of the one surfaces of said first and second semiconductor substrates (41, 42), said first and second semiconductor substrates (41, 42) being bonded together through said silicon oxide layer (43).
Claim 5
Dependent Claim
42 words
A sensor according to claim 1, characterized in that said first insulative layer (83) is made of one material selected from the group consisting of silicon nitride, silicon oxide, aluminum oxide, tantalum oxide, titanium oxide, zirconium oxide, niobium oxide, and hafnium oxide.
Claim 6
Dependent Claim
22 words
A sensor according to claim 4, characterized by further comprising a second insulative layer (84) formed on said first insulative layer (83).
Claim 7
Dependent Claim
53 words
A sensor according to claim 5, characterized in that said second layer (84) is made of a material different from that of said first insulative layer (83), and which is selected from the group consisting of silicon nitride, silicon oxide, aluminum oxide, tantalum oxide, titanium oxide, zirconium oxide, niobium oxide, and hafnium oxide.
Claim 8
Dependent Claim
28 words
A sensor according to claim 1, characterized in that said sensor region (41, 44, 45, 46, 95) has a field effect transistor structure for detecting an ion concentration.
Claim 9
Dependent Claim
167 words
A semiconductor sensor characterized by comprising: a first semiconductor substrate (41) of a first conductivity type having one surface and an opposite surface; a second semiconductor substrate (42) of the first conductivity type having one surface and an opposite surface and a through hole (53) extending from the one surface to the opposite surface thereof, the one surface being placed in contact with that of said first semiconductor substrate (41) and said first and second semiconductor substrates (41, 42) being directly bonded together; source and drain regions (44,.45) formed by diffusing an impurity of a second conductivity type in the one surface of said second semiconductor substrate (42), separated through said through hole (53), and extending along the one surface of said second semiconductor substrate (42); and a first insulative layer (56) formed on the opposite surface of said second semiconductor substrate (42), an inner surface of said through hole (53), and the one surface of said first semiconductor substrate (41) exposed in said through hole (53).
Claim 10
Dependent Claim
167 words
A semiconductor sensor characterized by comprising: a first semiconductor substrate (41) of a first conductivity type having one surface and an opposite surface; a second semiconductor substrate (42) of the first conductivity type having one surface and an opposite surface and a through hole (53) extending from the one surface to the opposite surface thereof, the one surface being placed in contact with that of said first semiconductor substrate (41) and said first and second semiconductor substrates (41, 42) being directly bonded together; source and drain regions (44,.45) formed by diffusing an impurity of a second conductivity type in the one surface of said second semiconductor substrate (42), separated through said through hole (53), and extending along the one surface of said second semiconductor substrate (42); and a first insulative layer (56) formed on the opposite surface of said second semiconductor substrate (42), an inner surface of said through hole (53), and the one surface of said first semiconductor substrate (41) exposed in said through hole (53).
Claim 11
Dependent Claim
20 words
A sensor according to claim 8, characterized in that said first and second semiconductor substrates (41, 42) are silicon substrates.
Claim 12
Dependent Claim
42 words
A sensor according to claim 8, characterized in that said first insulative layer (56) is made of one material selected from the group consisting of silicon nitride, silicon oxide, aluminum oxide, tantalum oxide, titanium oxide, zirconium oxide, niobium oxide, and hafnium oxide.
Claim 13
Dependent Claim
22 words
A sensor according to claim 10, characterized by further comprising a second insulative layer (66) formed on said first insulative layer (56).
Claim 14
Dependent Claim
53 words
A sensor according to claim 11, characterized in that said second layer (66) is made of a material different from that of said first insulative layer (56), and which is selected from the group consisting of silicon nitride, silicon oxide, aluminum oxide, tantalum oxide, titanium oxide, zirconium oxide, niobium oxide, and hafnium oxide.
Claim 15
Dependent Claim
57 words
A sensor according to claim 8, characterized by further comprising: source and drain regions (44, 45) formed by diffusing an impurity of a second conductivity type, separated from each other on the one surface of said first semiconductor substrate (41) exposed in said through hole, and extending along the one surface of said first semiconductor substrate (41).
Claim 16
Dependent Claim
35 words
A sensor according to claim 8, characterized by further comprising: contacts (59, 60) formed on the one surface of said second semiconductor substrate (42) and connected to said source and drain regions (44, 45), respectively.
Claim 17
Dependent Claim
185 words
A semiconductor sensor characterized by comprising: a first semiconductor substrate (41) of a first conductivity type having one surface and an opposite surface; a second semiconductor substrate (42) of a second conductivity type having one surface and an opposite surface, and a through hole (53) extending from the one surface to the opposite surface; a first insulative layer (43) formed on at least the one surfaces of said first and second semiconductor substrates (41, 42), the one surfaces being in contact with each other, and said first and second semiconductor substrates (41, 42) being bonded together through said first insulative layer (43); source and drain regions (44, 45) formed on said first semiconductor substrate (41) by diffusing an impurity of the second conductivity type, and separated from each other on the one surface of said first semiconductor substrate (41) exposed in said through hole (53); and a second insulative layer (78) formed on the opposite surface of said second semiconductor substrate (42), an inner surface of said through hole (53), and the one surface of said first semiconductor substrate (41) exposed in said through hole.
Claim 18
Dependent Claim
185 words
A semiconductor sensor characterized by comprising: a first semiconductor substrate (41) of a first conductivity type having one surface and an opposite surface; a second semiconductor substrate (42) of a second conductivity type having one surface and an opposite surface, and a through hole (53) extending from the one surface to the opposite surface; a first insulative layer (43) formed on at least the one surfaces of said first and second semiconductor substrates (41, 42), the one surfaces being in contact with each other, and said first and second semiconductor substrates (41, 42) being bonded together through said first insulative layer (43); source and drain regions (44, 45) formed on said first semiconductor substrate (41) by diffusing an impurity of the second conductivity type, and separated from each other on the one surface of said first semiconductor substrate (41) exposed in said through hole (53); and a second insulative layer (78) formed on the opposite surface of said second semiconductor substrate (42), an inner surface of said through hole (53), and the one surface of said first semiconductor substrate (41) exposed in said through hole.
Claim 19
Dependent Claim
20 words
A sensor according to claim 15, characterized in that said first and second semiconductor substrates (41, 42) are silicon substrates.
Claim 20
Dependent Claim
42 words
A sensor according to claim 15, characterized in that said first insulative layer (43) is made of one material selected from the group consisting of silicon nitride, silicon oxide, aluminum oxide, tantalum oxide, titanium oxide, zirconium oxide, niobium oxide, and hafnium oxide.
Claim 21
Dependent Claim
22 words
A sensor according to claim 17, characterized by further comprising a second insulative layer (84) formed on said first insulative layer (78).
Claim 22
Dependent Claim
53 words
A sensor according to claim 18, characterized in that said second layer (84) is made of a material different from that of said first insulative layer (43), and which is selected from the group consisting of silicon nitride, silicon oxide, aluminum oxide, tantalum oxide, titanium oxide, zirconium oxide, niobium oxide, and hafnium oxide.
Claim 23
Dependent Claim
35 words
A sensor according to claim 15, characterized by further comprising: contacts (59, 60) formed on the opposite surface of said first semiconductor substrate (41) and connectea to said source and drain regions (44, 45), respectively.
Claim 24
Dependent Claim
20 words
A sensor according to claim 15, characterized by further comprising: a selective film (95) arranged in said through hole (53).
Claim 25
Dependent Claim
25 words
A sensor according to claim 15, characterized by further comprising: a channel stopper (79) formed in the opposite surface of said first semiconductor substrate (41).
Claim 26
Independent Claim
137 words
A method of manufacturing a semiconductor sensor, characterized by comprising the steps of: flattening, by polishing, one surfaces of first and second semiconductor substrates (41, 42) of a first conductivity type, each having one surface and an opposite surface; placing the one surfaces of said first and second semiconductor substrates (41, 42) in contact with each other and heating said first and second semiconductor substrates (41, 42) at a temperature of not less than 200°C so as to bond them together; forming sensor elements having sensing sections (41, 44, 45, 46, 95) in at least one of said said first and second semiconductor substrates (41, 42); coating at least said sensing sections (41, 44, 45, 46, 95) of said sensor elements with an insulative layer (46, 56); and cutting the bonded substrates (41, 42) into individual sensors.
Claim 27
Independent Claim
137 words
A method of manufacturing a semiconductor sensor, characterized by comprising the steps of: flattening, by polishing, one surfaces of first and second semiconductor substrates (41, 42) of a first conductivity type, each having one surface and an opposite surface; placing the one surfaces of said first and second semiconductor substrates (41, 42) in contact with each other and heating said first and second semiconductor substrates (41, 42) at a temperature of not less than 200°C so as to bond them together; forming sensor elements having sensing sections (41, 44, 45, 46, 95) in at least one of said said first and second semiconductor substrates (41, 42); coating at least said sensing sections (41, 44, 45, 46, 95) of said sensor elements with an insulative layer (46, 56); and cutting the bonded substrates (41, 42) into individual sensors.
Claim 28
Dependent Claim
34 words
A sensor according to claim 23, characterized in that the one surfaces of said first and second semiconductor substrates (41, 42) are polished to obtain a surface roughness of not more than 500 A.
Claim 29
Dependent Claim
34 words
A sensor according to claim 23, characterized in that the one surfaces of said first and second semiconductor substrates (41, 42) are polished to obtain a surface roughness of not more than 50 A.
Claim 30
Dependent Claim
30 words
A sensor according to claim 23, characterized in that said first and second semiconductor substrates (41, 42) are heated at a temperature of 1,000 to 1,200°C in the bonding step.
Claim 31
Dependent Claim
40 words
A sensor according to claim 23, characterized by further comprising the step of forming an insulative layer (43) in at least one of the one surfaces of said first and second semiconductor substrates (41, 42) prior to the bonding step.
Claim 32
Dependent Claim
38 words
A sensor according to claim 23, characterized in that the sensor elements (41, 44, 45, 46, 95) having a field effect transistor structure are formed in the step of forming the sensor elements (41, 44, 45, 46, 95).
References Cited (Backward Citations)
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