EP0192229A2
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Conductivity modulation type semiconductor device and method for manufacturing the same
Assignee: Toshiba Corp
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Filing: 1986-02-18
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Granted: —
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Expires: 2006-02-18
Abstract
Abstract A conductivity modulation type semiconductor device comprises a semiconductor anode substrate (33) of a P type having two surfaces, a semiconductor substrate (31) of an N type having two surfaces, the semiconductor substrate having a high impurity layer-like region (32) on one surface thereof and a low concentration drain region on the other surface thereof, a body region (37) of P type formed in the drain region and exposed at one surface of the semiconductor substrate, source regions (38) of an N type formed in the body region and exposed at the other surface of the semiconductor substrate, and a gate layer (36) formed within the insulating layer, which extends between the source and drain regions, on the body region. The other surface of the anode substrate is polished and is intimately joined to the polished surface of the semiconductor substrate to form a junction layer therebetween.
Inventors
- 👤 Makoto C/O Patent Division Hideshima
- 👤 Wataru C/O Patent Division Takahashi
- 👤 Masashi C/O Patent Division Kuwahara
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-09 06:15
CPC Classifications
H; H10; H10D; H10D12/00; H10D12/01; H10D12/031; H10D12/032; H10D12/411; H10D12/441; H10D62/00; H10D62/10; H10D62/13; H10D62/141; H10D62/142; H10P; H10P10/00; H10P10/12; H10P10/128; Y; Y10; Y10S; Y10S148/00; Y10S148/012; Y10S438/00; Y10S438/914; Y10S438/919
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
181 words
A conductivity modulation type semiconductor device comprising: a semiconductor anode substrate (33) of a first conductivity type having first and second surfaces; a semiconductor substrate (31) of a second conductivity type having first and second surfaces, said semiconductor substrate (31) having a high impurity layer-like region (32) on the first surface thereof and a low concentration drain region on the second surface thereof; a body region (37) of the first conductivity type formed in the drain region and exposed at the second surface of the semiconductor substrate; a source region (38) of the second conductivity type formed in the body region and exposed at the second surface of the semiconductor substrate; an insulating layer (35) for protecting the exposed surface of the drain region, the body region and the source regions; and a gate layer (36) formed within the insulating layer, said gate layer extending on the body region between the source and drain regions, said second surface of said anode substrate (33) being intimately joined to said first surface of said semiconductor substrate (31) to form a junction layer therebetween.
Claim 2
Dependent Claim
181 words
A conductivity modulation type semiconductor device comprising: a semiconductor anode substrate (33) of a first conductivity type having first and second surfaces; a semiconductor substrate (31) of a second conductivity type having first and second surfaces, said semiconductor substrate (31) having a high impurity layer-like region (32) on the first surface thereof and a low concentration drain region on the second surface thereof; a body region (37) of the first conductivity type formed in the drain region and exposed at the second surface of the semiconductor substrate; a source region (38) of the second conductivity type formed in the body region and exposed at the second surface of the semiconductor substrate; an insulating layer (35) for protecting the exposed surface of the drain region, the body region and the source regions; and a gate layer (36) formed within the insulating layer, said gate layer extending on the body region between the source and drain regions, said second surface of said anode substrate (33) being intimately joined to said first surface of said semiconductor substrate (31) to form a junction layer therebetween.
Claim 3
Dependent Claim
39 words
A conductivity modulation type semiconductor device according to claim 1, further including: an anode electrode (41) formed on said first surface of said anode substrate; and a source electrode (40) formed on the exposed surface of said source region.
Claim 4
Dependent Claim
50 words
A conductivity modulation type semiconductor device according to claim 1 or 2, characterized in that said drain region has an impurity concentration of below 1 x 10 14 cm 3 , and said anode substrate (33) has an impurity concentration of above 1 x 10 14 cm - 3 .
Claim 5
Dependent Claim
28 words
A semiconductor modulation type semiconductor device according to claim 3, characterized in that said anode substrate (33) has an impurity concentration of above 1 x 10 20 cm-3.
Claim 6
Dependent Claim
28 words
A semiconductor modulation type semiconductor device according to claim 1, 2, 3 or 4, characterized in that said layer-like region has a thickness of 5 to 30 pm.
Claim 7
Dependent Claim
46 words
A semiconductor modulation type semiconductor device according to claim 1, 2, 3, 4 or 5, characterized in that said anode substrate has a low concentration layer on said second surface thereof, said low concentration layer being in contact with said layer-like region of said semiconductor substrate.
Claim 8
Independent Claim
206 words
A method for manufacturing a conductivity modulation type semiconductor device comprising the steps of: preparing a semiconductor anode substrate (33) of a first conductivity type having first and second surfaces surface mirror-polished; preparing a semiconductor substrate (31) of a second conductivity type having first surface mirror-polished and second surface, said semiconductor substrate having a high-concentration layer-like region (32) on said first surface thereof and a low-concentration drain region on said second surface thereof; mechanically and intimately joining said second surface of said anode substrate (33) and said first surface of said semiconductor substrate (31) to provide a junction therebetween; forming a body region (37) of said first conductivity type in said drain region such that it is exposed at said second surface of said semiconductor substrate; forming source region (38) of said second conductivity type in said body region to be exposed at said second surface of said semiconductor substrate; forming an insulating layer (35) on the exposed surface of said drain region, body region and source regions so as to protect them; and forming a gate layer (36) within said insulating layer, said gate layer being formed over the exposed surface of said drain region such that it extends between said source and drain regions.
Claim 9
Independent Claim
206 words
A method for manufacturing a conductivity modulation type semiconductor device comprising the steps of: preparing a semiconductor anode substrate (33) of a first conductivity type having first and second surfaces surface mirror-polished; preparing a semiconductor substrate (31) of a second conductivity type having first surface mirror-polished and second surface, said semiconductor substrate having a high-concentration layer-like region (32) on said first surface thereof and a low-concentration drain region on said second surface thereof; mechanically and intimately joining said second surface of said anode substrate (33) and said first surface of said semiconductor substrate (31) to provide a junction therebetween; forming a body region (37) of said first conductivity type in said drain region such that it is exposed at said second surface of said semiconductor substrate; forming source region (38) of said second conductivity type in said body region to be exposed at said second surface of said semiconductor substrate; forming an insulating layer (35) on the exposed surface of said drain region, body region and source regions so as to protect them; and forming a gate layer (36) within said insulating layer, said gate layer being formed over the exposed surface of said drain region such that it extends between said source and drain regions.
References Cited (Backward Citations)
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