EP0192143A2
Expired / Lapsed
EP
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Permeable polymer membrane for desiccation of gas
Assignee: Asahi Kasei Corp
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Filing: 1986-02-07
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Granted: —
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Expires: 2006-02-07
Abstract
Abstract A permeable polymer membrane, formed of a fluorine type copolymer containing a repeating unit represented by the general formula (wherein m is 0 or 1 and n is an integer of the value of 2 to 5) and satisfying the relation between the water absorption ratio, W, and the ion-exchange capacity, Q, represented by I the following formula 1.200 - 1.964<log W<1.200 - 1.742 (wherein W is , W, the dry weight, W 2 the equilibrium weight as immersed in pure water at 25°C, and Q the ion-exchange capacity in meq/g of H form dry resin). This permeable polymer membrane is capable of highly desiccating a gas to a low water content. By the use of the extremely desiccated gas, semi- conductor elements, semiconductor devices, intermediates thereof, and new components can be produced with outstanding quality. This permeable polymer membrane can be produced by a heat treatment.
Inventors
- 👤 Kazuo Toyomoto
- 👤 Eigo Terada
- 👤 Hiroshi Kobayashi
- 👤 Yoshiaki Kageura
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-30 07:59
CPC Classifications
C; C08; C08F; C08F214/00; C08F214/18; B; B01; B01D; B01D53/00; B01D53/26; B01D53/268; B01D71/00; B01D71/06; B01D71/76; C08J; C08J5/00; C08J5/20; C08J5/22; C08J5/2206; C08J5/2218; C08J5/2231; C08J5/2237; C23; C23C; C23C16/00; C23C16/44; C23C16/4401; C23C16/4402; B01D71/30; B01D71/32; C08J2327/00; C08J2327/02; C08J2327/12; C08J2327/18
Claims Analysis
Total Claims: 21
Claim 1
Independent Claim
95 words
A permeable polymer membrane, formed of a fluonne type copolymer containing a repeating unit represented by the general formula: (wherein m is 0 or 1 and n is an integer of the value of 2 to 5) and satisfying the relation between the water absorption ratio, W, and the ion-exchange capacity, Q, represented by the following formula 1.200 - 1.964<log W<1.20Q - 1.742 (wherein W is , W, the dry weight W 2 the equilibrium weight when immersed in pure water at 25°C, and Q the ion-exchange capacity in meq/g of H form dry resin).
Claim 2
Dependent Claim
95 words
A permeable polymer membrane, formed of a fluonne type copolymer containing a repeating unit represented by the general formula: (wherein m is 0 or 1 and n is an integer of the value of 2 to 5) and satisfying the relation between the water absorption ratio, W, and the ion-exchange capacity, Q, represented by the following formula 1.200 - 1.964<log W<1.20Q - 1.742 (wherein W is , W, the dry weight W 2 the equilibrium weight when immersed in pure water at 25°C, and Q the ion-exchange capacity in meq/g of H form dry resin).
Claim 3
Dependent Claim
20 words
A permeable polymer membrane according to Claim 1, wherein m is 1 and n is 3 in said general formula
Claim 4
Dependent Claim
24 words
A permeable polymer membrane according to either of Claims 1 or 2, wherein said permeable polymer membrane is in the form of hollow fibers.
Claim 5
Dependent Claim
107 words
4 . A method for producing a permeable polymer membrane satisfying the relation between the water absorption ratio W, and the ion-exchange capacity, Q, represented by the following formula: 1.20Q - 1.964<log w<1.20Q - 1.742 (wherein W is , W, the dry weight W 2 the equilibrium weight when immersed in pure water at 25°C, and Q the ion-exchange capacity in mq/g of H form dry resin) by forming a membrane of a fluorine type copolymer containing a repeating unit represented by the general formula: (wherein m is 0 or 1 and n is an integer of the value of 2 to 5), and heating the membrane.
Claim 6
Dependent Claim
107 words
4 . A method for producing a permeable polymer membrane satisfying the relation between the water absorption ratio W, and the ion-exchange capacity, Q, represented by the following formula: 1.20Q - 1.964<log w<1.20Q - 1.742 (wherein W is , W, the dry weight W 2 the equilibrium weight when immersed in pure water at 25°C, and Q the ion-exchange capacity in mq/g of H form dry resin) by forming a membrane of a fluorine type copolymer containing a repeating unit represented by the general formula: (wherein m is 0 or 1 and n is an integer of the value of 2 to 5), and heating the membrane.
Claim 7
Dependent Claim
22 words
A method according to Claim 4, wherein said heating is carried out at a temperature in the range of 70° to 200°C.
Claim 8
Independent Claim
156 words
A method for the desiccation of a water-containing gas, characterized by preparing a permeable polymer membrane, formed of a fluorine type copolymer containing a repeating unit represented by the general formula: (wherein m is 0 or 1 and n is an integer of the value of 2 to 5) and satisfying the relation between the water absorption ratio, W, and the ion-exchange capacity, Q, represented by the following formula 1.200 - 1.96 4 <log W< 1 .200 - 1.742 (wherein W is , W, the dry weight, W 2 the equilibrium weight when immersed in pure water at 25°C, and Q the ion-exchange capacity in meq/g of H form dry resin) bringing said gas into contact with one side of said membrane, and either bringing a dry purge gas into contact with the other side of said membrane or reducing the pressure on said other side of said membrane thereby removing water from said water-containing gas.
Claim 9
Independent Claim
156 words
A method for the desiccation of a water-containing gas, characterized by preparing a permeable polymer membrane, formed of a fluorine type copolymer containing a repeating unit represented by the general formula: (wherein m is 0 or 1 and n is an integer of the value of 2 to 5) and satisfying the relation between the water absorption ratio, W, and the ion-exchange capacity, Q, represented by the following formula 1.200 - 1.96 4 <log W< 1 .200 - 1.742 (wherein W is , W, the dry weight, W 2 the equilibrium weight when immersed in pure water at 25°C, and Q the ion-exchange capacity in meq/g of H form dry resin) bringing said gas into contact with one side of said membrane, and either bringing a dry purge gas into contact with the other side of said membrane or reducing the pressure on said other side of said membrane thereby removing water from said water-containing gas.
Claim 10
Independent Claim
162 words
A method for etching a semiconductor wafer, a semiconductor device, or an intermediate thereof by using a gas which has been desiccated by preparing a permeable polymer membrane, formed of a fluorine type copolymer containing a repeating unit represented by the general formula: (wherein m is 0 or 1 and n is an integer of the value of 2 to 5) and satisfying the relation between the water absorption ratio, W, and the ion-exchange capacity, Q, represented by the following formula: 1.20Q - 1.964<log W<1.20Q - 1.742 (wherein W is , W, the dry weight W, the equilibrium weight when immersed in pure water at 25°C, and Q the ion-exchange capacity in meq/g of H form dry resin) bringing said gas into contact with one side of said membrane, and either bringing a dry purge gas into contact with the other side of said membrane or reducing the pressure on said other side of said membrane thereby removing water from said gas.
Claim 11
Independent Claim
162 words
A method for etching a semiconductor wafer, a semiconductor device, or an intermediate thereof by using a gas which has been desiccated by preparing a permeable polymer membrane, formed of a fluorine type copolymer containing a repeating unit represented by the general formula: (wherein m is 0 or 1 and n is an integer of the value of 2 to 5) and satisfying the relation between the water absorption ratio, W, and the ion-exchange capacity, Q, represented by the following formula: 1.20Q - 1.964<log W<1.20Q - 1.742 (wherein W is , W, the dry weight W, the equilibrium weight when immersed in pure water at 25°C, and Q the ion-exchange capacity in meq/g of H form dry resin) bringing said gas into contact with one side of said membrane, and either bringing a dry purge gas into contact with the other side of said membrane or reducing the pressure on said other side of said membrane thereby removing water from said gas.
Claim 12
Independent Claim
191 words
A method for forming an oxide coating in the production of a semiconductor wafer, a semiconductor device, or an intermediate thereof, characterized by forming said oxide coating by use of an ordinary gas and/or a corrosive gas which has been desiccated by preparing a permeable polymer membrane, formed of a fluorine type copolymer containing a repeating unit represented by the general formula : (wherein m is 0 or 1 and n is an integer of the value of 2 to 5) and satisfying the relation between the water absorption ratio, W, and the ion-exchange capacity, Q, represented by the following formula: 1.200 - 1.964<log W<1.20Q - 1.742 (wherein W is , W, the dry weight W 2 the equilibrium weight when immersed in pure water at 25°C, and Q the ion-exchange capacity in meq/g of H form dry resin) bringing said ordinary gas and/or corrosive gas into contact with one side of said membrane, and either bringing a dry purge gas into contact with the other side of said membrane or reducing the pressure on said other side of said membrane thereby removing water from said ordinary gas and/or corrosive gas.
Claim 13
Independent Claim
191 words
A method for forming an oxide coating in the production of a semiconductor wafer, a semiconductor device, or an intermediate thereof, characterized by forming said oxide coating by use of an ordinary gas and/or a corrosive gas which has been desiccated by preparing a permeable polymer membrane, formed of a fluorine type copolymer containing a repeating unit represented by the general formula : (wherein m is 0 or 1 and n is an integer of the value of 2 to 5) and satisfying the relation between the water absorption ratio, W, and the ion-exchange capacity, Q, represented by the following formula: 1.200 - 1.964<log W<1.20Q - 1.742 (wherein W is , W, the dry weight W 2 the equilibrium weight when immersed in pure water at 25°C, and Q the ion-exchange capacity in meq/g of H form dry resin) bringing said ordinary gas and/or corrosive gas into contact with one side of said membrane, and either bringing a dry purge gas into contact with the other side of said membrane or reducing the pressure on said other side of said membrane thereby removing water from said ordinary gas and/or corrosive gas.
Claim 14
Independent Claim
204 words
A method for cleaning the surface of a semiconductor wafer, a CVD device, and an impurity diffusing furnace in the production of the semiconductor wafer, a semiconductor device, or an intermediate thereof, which method is characterized by passing a raw material gas through the entire system and thereafter effecting said cleaning by the use of a gas which has been desiccated by preparing a permeable polymer membrane, formed of a fluorine type copolymer containing a repeating unit represented by the general formula: (wherein m is 0 or 1 and n is an integer of the value of 2 to 5) and satisfying the relation between the water absorption ratio, W, and the ion-exchange capacity, Q, represented by the following formula: 1.200 - 1.96 4 <log W<1.20Q - 1.742 (wherein W is , W, the dry weight W 2 the equilibrium weight when immersed in pure water at 25°C, and Q the ion-exchange capacity in meq/g of H form dry resin) bringing said gas into contact with one side of said membrane, and either bringing a dry purge gas into contact with the other side of said membrane or reducing the pressure on said other side of said membrane thereby removing water from said gas.
Claim 15
Independent Claim
204 words
A method for cleaning the surface of a semiconductor wafer, a CVD device, and an impurity diffusing furnace in the production of the semiconductor wafer, a semiconductor device, or an intermediate thereof, which method is characterized by passing a raw material gas through the entire system and thereafter effecting said cleaning by the use of a gas which has been desiccated by preparing a permeable polymer membrane, formed of a fluorine type copolymer containing a repeating unit represented by the general formula: (wherein m is 0 or 1 and n is an integer of the value of 2 to 5) and satisfying the relation between the water absorption ratio, W, and the ion-exchange capacity, Q, represented by the following formula: 1.200 - 1.96 4 <log W<1.20Q - 1.742 (wherein W is , W, the dry weight W 2 the equilibrium weight when immersed in pure water at 25°C, and Q the ion-exchange capacity in meq/g of H form dry resin) bringing said gas into contact with one side of said membrane, and either bringing a dry purge gas into contact with the other side of said membrane or reducing the pressure on said other side of said membrane thereby removing water from said gas.
Claim 16
Independent Claim
197 words
A method for diffusing impurities in the production of a semiconductor wafer, a compound semiconductor wafer, a semiconductor device, a compound semiconductor device, and/or an intermediate thereof, which method is characterized by diffusing said impurities on said semiconductor wafer of said compound semiconductor wafer by the use of a doping gas which has been desiccated by preparing a permeable polymer membrane, formed of a fluorine type copolymer containing a repeating unit represented by the general formula: (wherein m is 0 or 1 and n is an integer of the value of 2 to 5) and satisfying the relation between the water absorption ratio, W, and the ion-exchange capacity, Q, represented by the following formula: 1.20Q - 1.964<log W<1.20Q - 1.742 (wherein W is , W, the dry weight, W, the equilibrium weight when immersed in pure water at 25°C, and Q the ion-exchange capacity in meq/g of H form dry resin) bringing said doping gas into contact with one side of said membrane, and either bringing a dry purge gas into contact with the other side of said membrane or reducing the pressure on said other side of said membrane thereby removing water from said doping gas.
Claim 17
Independent Claim
197 words
A method for diffusing impurities in the production of a semiconductor wafer, a compound semiconductor wafer, a semiconductor device, a compound semiconductor device, and/or an intermediate thereof, which method is characterized by diffusing said impurities on said semiconductor wafer of said compound semiconductor wafer by the use of a doping gas which has been desiccated by preparing a permeable polymer membrane, formed of a fluorine type copolymer containing a repeating unit represented by the general formula: (wherein m is 0 or 1 and n is an integer of the value of 2 to 5) and satisfying the relation between the water absorption ratio, W, and the ion-exchange capacity, Q, represented by the following formula: 1.20Q - 1.964<log W<1.20Q - 1.742 (wherein W is , W, the dry weight, W, the equilibrium weight when immersed in pure water at 25°C, and Q the ion-exchange capacity in meq/g of H form dry resin) bringing said doping gas into contact with one side of said membrane, and either bringing a dry purge gas into contact with the other side of said membrane or reducing the pressure on said other side of said membrane thereby removing water from said doping gas.
Claim 18
Independent Claim
210 words
A method for forming a coating on a substrate placed under a vacuum or atmospheric pressure by introducing a raw material gas for the formation of said coating and/or a carrier gas into the system enclosing said vacuum or atmospheric pressure therein, which method is characterized by the fact that said raw material gas and/or carrier gas has been desiccated by preparing a permeable polymer membrane, formed of a fluorine type copolymer containing a repeating unit represented by the general formula: (wherein m is 0 or 1 and n is an integer of the value of 2 to 5) and satisfying the relation betwen the water absorption ratio, W, and the ion-exchange capacity,Q, represented by the following formula 1.200 - 1.964<log W< 1 .200 - 1.742 (wherein W is , W, the dry weight W2 the equilibrium weight when immersed in pure water at 25°C, and Q the ion-exchange capacity in meq/g of H form dry resin) bringing said raw material gas and/or carrier gas into contact with one side of said membrane, and either bringing a dry purge gas into contact with the other side of said membrane or reducing the pressure on said other side of said membrane thereby removing water from said raw material and/or carrier gas.
Claim 19
Independent Claim
210 words
A method for forming a coating on a substrate placed under a vacuum or atmospheric pressure by introducing a raw material gas for the formation of said coating and/or a carrier gas into the system enclosing said vacuum or atmospheric pressure therein, which method is characterized by the fact that said raw material gas and/or carrier gas has been desiccated by preparing a permeable polymer membrane, formed of a fluorine type copolymer containing a repeating unit represented by the general formula: (wherein m is 0 or 1 and n is an integer of the value of 2 to 5) and satisfying the relation betwen the water absorption ratio, W, and the ion-exchange capacity,Q, represented by the following formula 1.200 - 1.964<log W< 1 .200 - 1.742 (wherein W is , W, the dry weight W2 the equilibrium weight when immersed in pure water at 25°C, and Q the ion-exchange capacity in meq/g of H form dry resin) bringing said raw material gas and/or carrier gas into contact with one side of said membrane, and either bringing a dry purge gas into contact with the other side of said membrane or reducing the pressure on said other side of said membrane thereby removing water from said raw material and/or carrier gas.
Claim 20
Independent Claim
212 words
An apparatus for forming a thin-film, comprising a film--forming chamber capable of keeping the interior thereof under a vacuum or atmospheric pressure, a gas inlet for introducing a gas from a gas supply source into said film-forming chamber, vacuumizing means capable of evacuating said film-forming chamber of a gas, and water separating means interposed between said gas inlet and said gas supply source, which apparatus is characterized by the fact that said water separating means comprises a casing having inserted therein a multiplicity of hollow fibers of a permeable polymer membrane, formed of a fluorine type copolymer containing a repeating unit represented by the general formula: (wherein m is 0 or 1 and n is an integer of the value of 2 to 5) and satisfying the relation between the water absorption ratio, W, and the ion-exchange capacity, 0, represented by the following formula 1.200 - 1.96 4 <log W<1.200 - 1.742 (wherein W is , W, the dry weight, W 2 the equilibrium weight when immersed in pure water at 25°C, and 0 the ion-exchange capacity in meq/g of H form dry resin) with the opposite ends of said hollow fibers fixed in place with resin in such a manner that different gases are passable outside and inside said hollow fibers.
Claim 21
Independent Claim
212 words
An apparatus for forming a thin-film, comprising a film--forming chamber capable of keeping the interior thereof under a vacuum or atmospheric pressure, a gas inlet for introducing a gas from a gas supply source into said film-forming chamber, vacuumizing means capable of evacuating said film-forming chamber of a gas, and water separating means interposed between said gas inlet and said gas supply source, which apparatus is characterized by the fact that said water separating means comprises a casing having inserted therein a multiplicity of hollow fibers of a permeable polymer membrane, formed of a fluorine type copolymer containing a repeating unit represented by the general formula: (wherein m is 0 or 1 and n is an integer of the value of 2 to 5) and satisfying the relation between the water absorption ratio, W, and the ion-exchange capacity, 0, represented by the following formula 1.200 - 1.96 4 <log W<1.200 - 1.742 (wherein W is , W, the dry weight, W 2 the equilibrium weight when immersed in pure water at 25°C, and 0 the ion-exchange capacity in meq/g of H form dry resin) with the opposite ends of said hollow fibers fixed in place with resin in such a manner that different gases are passable outside and inside said hollow fibers.
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