EP0190412A2
Expired / Lapsed
EP
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Method for fabricating a planar phase-shifter
Assignee: Ball Corp
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Filing: 1981-09-05
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Granted: —
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Expires: 2001-09-05
Abstract
Abstract The invention relates to a process for fabricating one or more antenna elements on a monolithic substrate.
Inventors
- 👤 Ronald J. Stockton
- 👤 Robert E. Munson
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-26 09:32
CPC Classifications
H; H01; H01Q; H01Q1/00; H01Q1/36; H01Q1/38; H01Q3/00; H01Q3/26; H01Q3/30; H01Q3/34; H01Q3/36; H01Q3/38; H01Q3/385; H10; H10D; H10D84/00; H10D84/01; H10D84/02; H10D84/05
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
34 words
An antenna structure comprising a substrate of semi-insulating gallium arsenide having a resistivity of about 10a ohm-cm, an antenna element being integrally formed on said substrate and arranged for transmitting or receiving electromagnetic waves.
Claim 2
Dependent Claim
34 words
An antenna structure comprising a substrate of semi-insulating gallium arsenide having a resistivity of about 10a ohm-cm, an antenna element being integrally formed on said substrate and arranged for transmitting or receiving electromagnetic waves.
Claim 3
Dependent Claim
16 words
An antenna structure as in claim 1 wherein the semi-insulating gallium arsenide is doped with chromium.
Claim 4
Dependent Claim
20 words
An antenna structure as in claim 1 wherein the chromium concentration is about 5 x 10 15 cm -3 .
Claim 5
Dependent Claim
31 words
An antenna structure as in claim 1 wherein the semi-insulating gallium arsenide is coated with a layer of titanium, followed by a layer of platinum and, thereafter, a layer of gold.
Claim 6
Dependent Claim
20 words
5 . An antenna structure as in claim 1 wherein the element has a dimension of about one-half wavelength dimension.
Claim 7
Dependent Claim
22 words
An antenna structure as in Claim 1 wherein there are more than one element so as to form an array of elements.
Claim 8
Dependent Claim
19 words
An antenna structure of claim 6 where the elements are deposited on the surface of the gallium arsenide substrate.
Claim 9
Dependent Claim
35 words
An antenna structure as recited in Claim 6 further including feedlines integrally formed on said gallium arsenide and connected to the edges of said antenna elements for conducting electrical signals to and from said elements.
Claim 10
Dependent Claim
31 words
An antenna structure as in Claim 6 wherein said semi-insulating gallium arsenide has a thickness compatible with the propagation characteristics of the antenna elements of about 0.6 mm at 10 GHz.
Claim 11
Independent Claim
184 words
A method for fabricating planar phase shifter for a monolithic microwave system comprising the steps of: lapping and polishing a layer of semi-insulating GaAs to a plane parallel thickness compatible with microstrip propagation, said layer serving as a substrate for said monolithic microwave system; covering the substrate with Si0 2 and a metal; opening windows in said metal; removing the Si0 2 , exposed through said windows by dry etching; ion implanting to form N+ regions; removing the remaining metal and Si0 2 from a source to drain gap region; ion implanting an active layer; defining an alignment mark by ion milling; removing any remaining metal and photo-resist material; depositing a nitride and an oxide; annealing the implantations; removing the insulators; defining ohmic contact holes using a photolithographic technique; depositing metallizations of AuGe-Pt; depositing a layer of Si0 2 ; defining gate and ohmic contact holes; removing exposed S10 2 by plasma etching; depositing metallizations of TiPtAu; defining gate and circuit path areas using a photo-resist technique; and removing exposed metal by ion-milling to form microstrip transmission lines, radiating elements and biasing interconnect metallizations.
Claim 12
Independent Claim
184 words
A method for fabricating planar phase shifter for a monolithic microwave system comprising the steps of: lapping and polishing a layer of semi-insulating GaAs to a plane parallel thickness compatible with microstrip propagation, said layer serving as a substrate for said monolithic microwave system; covering the substrate with Si0 2 and a metal; opening windows in said metal; removing the Si0 2 , exposed through said windows by dry etching; ion implanting to form N+ regions; removing the remaining metal and Si0 2 from a source to drain gap region; ion implanting an active layer; defining an alignment mark by ion milling; removing any remaining metal and photo-resist material; depositing a nitride and an oxide; annealing the implantations; removing the insulators; defining ohmic contact holes using a photolithographic technique; depositing metallizations of AuGe-Pt; depositing a layer of Si0 2 ; defining gate and ohmic contact holes; removing exposed S10 2 by plasma etching; depositing metallizations of TiPtAu; defining gate and circuit path areas using a photo-resist technique; and removing exposed metal by ion-milling to form microstrip transmission lines, radiating elements and biasing interconnect metallizations.
References Cited (Backward Citations)
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