EP0189791A2
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Solder interconnection structure for joining semiconductor devices to substrates, and process for making
Assignee: International Business Machines Corp
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Filing: 1986-01-17
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Granted: —
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Expires: 2006-01-17
Abstract
Abstract An improved solder interconnection for forming 1/0 connections between an integrated semiconductor device and a support substrate having a plurality of solder connections arranged in an area array joining a set of I/O's on a flat surface of the semiconductor device to a corresponding set of solder wettable pads on a substrate, the improvement being a band of dielectric organic material disposed between and bonded to the device and substrate embedding at least an outer row of solder connections leaving the center inner solder connections and the adjacent top and bottom surfaces free of dielectric material.
Inventors
- 👤 Keith Fowler Beckham
- 👤 Anne Elizabeth Kolman
- 👤 Kathleen Mary Mcguire
- 👤 Karl Joseph Puttlitz
- 👤 Horatio Quinones
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-05 15:28
CPC Classifications
H; H05; H05K; H05K3/00; H05K3/30; H05K3/32; H05K3/34; H05K3/341; H05K3/3431; H05K3/3436; H10; H10W; H10W74/00; H10W74/01; H10W74/012; H10W74/10; H10W74/15; H05K2201/00; H05K2201/10; H05K2201/10613; H05K2201/10954; H05K2201/10977; H05K3/22; H05K3/28; H05K3/284; H10W72/00; H10W72/30; H10W72/341; H10W72/344; H10W72/851; H10W72/853; H10W72/856; H10W90/00; H10W90/701; H10W90/721; H10W90/724; H10W90/731; H10W90/734; Y; Y02; Y02P; Y02P70/00; Y02P70/50; Y10; Y10T; Y10T29/00; Y10T29/49; Y10T29/49002; Y10T29/49117; Y10T29/49124; Y10T29/4913; Y10T29/49144
Claims Analysis
Total Claims: 17
Claim 1
Independent Claim
95 words
An improved solder interconnection for forming I/O connections between an integrated semiconductor device and a support substrate characterized by a plurality of solder connections arranged in an area array joining a set of I/O's on a flat surface of said semiconductor device to a corresponding set of solder wettable pads on a substrate, a band of dielectric organic material disposed between and bonded to said device and substrate embedding at least an outer row of solder connections, and leaving the central inner solder connections and the adjacent top and bottom surfaces free of dielectric material.
Claim 2
Dependent Claim
95 words
An improved solder interconnection for forming I/O connections between an integrated semiconductor device and a support substrate characterized by a plurality of solder connections arranged in an area array joining a set of I/O's on a flat surface of said semiconductor device to a corresponding set of solder wettable pads on a substrate, a band of dielectric organic material disposed between and bonded to said device and substrate embedding at least an outer row of solder connections, and leaving the central inner solder connections and the adjacent top and bottom surfaces free of dielectric material.
Claim 3
Dependent Claim
54 words
The solder interconnection structure of claim 1 characterized in that said band of dielectric material covers as a minimum a single outer peripherial row and column, and as a maximum the rows and columns outside the line where the normal axial displacement pf the solder terminals is zero when no dielectric material is present.
Claim 4
Dependent Claim
21 words
The solder interconnection of claim 1 or 2 characterized in that said band of dielectric organic material is a polyamide-imide polymer.
Claim 5
Dependent Claim
42 words
The solder interconnection of claim 3 characterized in that said band of dielectric material is a polymer formed by reacting with trimellite anhydride or acychloride of trimellitic anhydride, and further reacting with -aminopropyl triethoxy silane or s - (3,4-epoxy cyclohexyl) ethyltrimethoxy silane.
Claim 6
Dependent Claim
38 words
The solder interconnection of one of the claims 1 to 4 characterized in that said solder interconnections are arranged in columns and rows and are uniformly disposed over the entire face of said device surface facing said substrate.
Claim 7
Dependent Claim
27 words
The solder interconnection of claim 5 wherein the spacing on a center-to-center basis of said solder interconnection grid is in the range of 4 to 20 mils.
Claim 8
Dependent Claim
31 words
The solder interconnection structure of claims 5 and 6 wherein said band of dielectric material embeds substantially the region of the device where the solder connections are outside the compression zone.
Claim 9
Dependent Claim
29 words
The solder interconnection of one of the claims 1 to 7 wherein the spacing between said device and said substrate is in the range of 2 to 10 mils.
Claim 10
Dependent Claim
29 words
The solder interconnection of one of the claims 1 to 8 wherein the spacing between said device and said substrate is in the range of 2 to 4 mils.
Claim 11
Dependent Claim
19 words
The solder interconnection of one of the claims 1 to 9 wherein said substrate supports a plurality of devices.
Claim 12
Dependent Claim
26 words
The solder interconnection of one of the claims 1 to 10 wherein said device is formed of monocrystalline Si and said substrate is formed of alumina.
Claim 13
Independent Claim
49 words
A method of increasing the fatigue life of solder interconnections between a semiconductor and a supporting substrate characterized by applying a dielectric material exclusively to the peripheral solder connections whereby the connections are embedded leaving the inner connections unembedded, said material adherent to both- the device and the substrate.
Claim 14
Independent Claim
49 words
A method of increasing the fatigue life of solder interconnections between a semiconductor and a supporting substrate characterized by applying a dielectric material exclusively to the peripheral solder connections whereby the connections are embedded leaving the inner connections unembedded, said material adherent to both- the device and the substrate.
Claim 15
Dependent Claim
15 words
The method of claim 12 characterized in that said dielectric material is a polyamide-imide polymer.
Claim 16
Independent Claim
19 words
The method of claims 12 and 13 characterized in that said dielectric material is a polymer formed by reacting
Claim 17
Independent Claim
55 words
The method of one of the claims 12 to 14 wherein said dielectric material is applied to the solder connections by dispensing a liquid mixture of an organic resin, an adhesion promoter and a solvent along the device peripheral edge and allowing the liquid to be drawn between the device an substrate by surface tension.
References Cited (Backward Citations)
No citation records indexed.
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