EP0189598A1
Expired / Lapsed
EP
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Method for manufacturing a semiconductor device
Assignee: Toshiba Corp
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Filing: 1985-12-27
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Granted: —
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Expires: 2005-12-27
Abstract
Abstract Semiconductor body (1,3, 5, 7, 9) is prepared and a film (11) is formed on the semiconductor body (1, 3, 5, 7, 9), followed by forming an interconnection layer of aluminum alloy on the insulating film (11). A silicon oxide film (17) is formed on the interconnection layer (15), followed by removing that portion of the silicon oxide film (17) which is situated on a predetermined trimming area of the interconnection layer (15). A silicon nitride film (21) is formed on the whole surface of the resultant structure. An energy beam (L) is directed onto the predetermined trimming area of the interconnection layer (15), causing the interconnection layer (15) to be locally heated to 400 to 600°C whereby atoms in the interconnection layer (15) migrate to permit the interconnection layer (15) to be trimmed.
Inventors
- 👤 Shigeru C/O Patent Division Komatsu
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-03 11:17
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10W20/49; H10P; H10P34/00; H10P34/40; H10P34/42; Y; Y10; Y10S; Y10S148/00; Y10S148/093; Y10S148/14
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
215 words
A method for manufacturing a semiconductor device including the steps: preparing a semiconductor body (1, 3, 5, 7, 9); forming at least one insulating film (13) on said semiconductor body (1, 3, 5, 7, 9); forming at least one interconnection layer on said insulating film (15); forming another insulating film (17, 21) at least on said interconnection layer (15); and directing an energy beam (L) onto said interconnection layer (15) to permit said interconnection layer (15) to be trimmed, characterized in that said step of forming another insulating film comprises step of forming a first insulating film (21) contacting said interconnection layer (15) at least one predetermined area including at least a portion of said interconnection layer (15) as well as a second insulating film (17) at an area other than said predetermined area, a ratio of a thermal expansion coefficient of said first insulating film (21) to that of said interconnection layer (15) being smaller than a ratio of a thermal expansion coefficient of said second insulating film (17) to that of said interconnection layer (15); and said step of directing an energy beam comprises step of directing said energy beam (L) onto said predetermined area of said interconnection layer (15), heating that area to permit migration of atoms of said interconnection layer (15).
Claim 2
Independent Claim
215 words
A method for manufacturing a semiconductor device including the steps: preparing a semiconductor body (1, 3, 5, 7, 9); forming at least one insulating film (13) on said semiconductor body (1, 3, 5, 7, 9); forming at least one interconnection layer on said insulating film (15); forming another insulating film (17, 21) at least on said interconnection layer (15); and directing an energy beam (L) onto said interconnection layer (15) to permit said interconnection layer (15) to be trimmed, characterized in that said step of forming another insulating film comprises step of forming a first insulating film (21) contacting said interconnection layer (15) at least one predetermined area including at least a portion of said interconnection layer (15) as well as a second insulating film (17) at an area other than said predetermined area, a ratio of a thermal expansion coefficient of said first insulating film (21) to that of said interconnection layer (15) being smaller than a ratio of a thermal expansion coefficient of said second insulating film (17) to that of said interconnection layer (15); and said step of directing an energy beam comprises step of directing said energy beam (L) onto said predetermined area of said interconnection layer (15), heating that area to permit migration of atoms of said interconnection layer (15).
Claim 3
Dependent Claim
26 words
The method according to claim 1, in which said interconnection layer (15) is formed of either one of aluminum and aluminum alloy; said first insulating film
Claim 4
Dependent Claim
23 words
(21) is formed of either one of silicon nitride and silicon carbide and said second insulating film (17) is formed of silicon oxide.
Claim 5
Dependent Claim
23 words
(21) is formed of either one of silicon nitride and silicon carbide and said second insulating film (17) is formed of silicon oxide.
Claim 6
Dependent Claim
78 words
The method according to claim 1, in which said step of forming first and second insulating layers comprises step of forming said second insulating film (17) on said interconnection layer (15), step of removing said second insulating film (17) on said predetermined area and step of forming said first insulating film (21) at least on a removed portion (19) of said second insulating film, said first insulating film (21) being in direct contact with said interconnection layer (15).
Claim 7
Dependent Claim
58 words
The method according to claim 1, in which said step of forming first and second insulating films comprises step of forming said first insulating film (37) on said predetermined area and forming said second insulating film (39) at least on said first insulating film (37) and that area of said interconnection layer (15) other than said predetermined area.
Claim 8
Dependent Claim
127 words
The method according to claim 1, in which said step of forming an insulating film on said semiconductor body (1, 3, 5, 7, 9) comprises step of forming a third insulating film (11) on said semiconductor body (1, 3, 5, 7) and step of forming a fourth insulating film (53) on said third insulating film (11) such that it contacts at least that undersurface of said interconnection layer (15) above which said first insulating film (21) is in contact with said interconnection layer (15), a ratio of a thermal expansion coefficient of said third insulating film (11) to that of said interconnection layer (15) being bigger than a ratio of a thermal expansion coefficient of said fourth insulating film (53) to that of said interconnection layer (15).
Claim 9
Dependent Claim
49 words
The method according to claim 5, in which said interconnection layer (15) is formed of either one of aluminum and aluminum alloy, said third insulating film (11) is formed of silicon dioxide and said fourth insulating film (53) is formed of either one of silicon nitride and silicon carbide.
Claim 10
Dependent Claim
25 words
The method according to claim 1, in which said step of directing an energy beam comprises irradiating said interconnection layer (15) with a laser beam.
Claim 11
Dependent Claim
39 words
The method according to claim 1, in which said step of directing an energy beam comprises irradiating said interconnection layer (15) with an energy beam to permit said interconnection layer (15) to be locally heated to 400 to 600°C.
Claim 12
Dependent Claim
78 words
The method according to claim 1, in which said step of directing an energy beam comprises locally heating said interconnection layer, causing pressure to act upon said interconnection layer due to a difference between a thermal expansion coefficient of said interconnection layer (15) and those of said first and second insulating films (21, 17) whereby atoms in said interconnection layer (15) are diffused into said first insulating film due to their migration to trim said interconnection layer (15).
Claim 13
Dependent Claim
91 words
The method according to claim 1, in which said step of directing an energy beam comprises radiating a laser beam (L) onto said interconnection layer (15), causing said interconnection layer (15) to be locally heated to 400 to 600°C to permit pressure to act upon the interconnection layer due to a difference between the interconnection layer (15) and said first and second insulating films (1, 17), whereby atoms in said interconnection layer (15) are diffused into said first insulating film (21) due to their migration to trim said interconnection layer (15).
References Cited (Backward Citations)
EP0090565A2
Cited
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