EP0189252A2
Expired / Lapsed
EP
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Semiconductor laser direct frequency modulation system
Assignee: NEC Corp
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Filing: 1986-01-09
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Granted: —
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Expires: 2006-01-09
Abstract
Abstract A semiconductor laser modulation system includes a semiconductor laser element having first and second regions, whose laser oscillation frequency is adjusted by currents injected into the first and second regions, means for supplying a biasing current of or above the threshold to the first region, and means for supplying a biasing current and a modulation signal current to the second region, wherein the semiconductor laser element generates a frequency modulated laser beam by varying the refractive index of the second region with the modulation signal current.
Inventors
- 👤 Katsumi Emura
- 👤 Kouichi Minemura
- 👤 Masayuki Yamaguchi
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-05 22:31
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/06; H01S5/062; H01S5/0625; H01S5/06255; H01S5/06258
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
87 words
A semiconductor laser modulation system comprising: a semiconductor laser element further including first and second regions, whose laser oscillation frequency is adjusted by currents injected into said first and second regions; means for supplying a biasing current of or above the threshold to said first region; and means for supplying a biasing current and a modulation signal current to said second region, wherein said semiconductor laser element generates a frequency modulated laser beam by varying the refractive index of said second region with said modulation signal current.
Claim 2
Dependent Claim
87 words
A semiconductor laser modulation system comprising: a semiconductor laser element further including first and second regions, whose laser oscillation frequency is adjusted by currents injected into said first and second regions; means for supplying a biasing current of or above the threshold to said first region; and means for supplying a biasing current and a modulation signal current to said second region, wherein said semiconductor laser element generates a frequency modulated laser beam by varying the refractive index of said second region with said modulation signal current.
Claim 3
Dependent Claim
40 words
A semiconductor laser modulation system, as claimed in Claim 1, wherein each of said first and second regions includes an active layer capable of emitting light upon injection of the current and an optical guide layer adjoining said active layer.
Claim 4
Dependent Claim
30 words
A semiconductor laser modulation system, as claimed in Claim 2, wherein the biasing current supplied to said second region is set at or below the threshold of said second region.
References Cited (Backward Citations)
No citation records indexed.
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