EP0186296A2
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Method of producing a contact on a semiconductor device
Assignee: STC PLC
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Filing: 1985-11-14
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Granted: —
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Expires: 2005-11-14
Abstract
Abstract In order to prevent diffusion of silicon into aluminium metallisation (7) from an underlaying silicon region (2) a titanium nitride diffusion barrier layer (6) is provided, in a self-aligned manner, at a window (3) in an oxide layer (1) over the silicon. The process involves depositing titanium (4) over the oxide (1) and in the window (3), annealing to cause titanium disilicide (5) to be formed in the window, removing unreacted titanium (4) and annealing in nitrogen to convert the titanium disilicide (5) to titanium nitride (6). Metallisation (7) of pure aluminium is subsequently applied and patterned as appropriate.
Inventors
- 👤 Peter Denis Scovell
- 👤 Paul John Rosser
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-07 07:59
CPC Classifications
H; H10; H10P; H10P95/00; H10P14/00; H10P14/40; H10P14/418
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
126 words
A method of manufacturing a semiconductor device including the steps of providing an electrically insulating layer over a silicon layer or a silicon substrate and exposing a region.of the silicon via a hole in the insulating layer, characterised by the subsequent steps of depositing titanium (4) over the insulating layer (1) and the exposed silicon region (2), causing titanium disilicide (5) to be formed locally at the exposed region of silicon, removing unreacted titanium (4) from the insulating layer (1), converting at least part of the titanium disilicide (5) to titanium nitride (6) and providing a metallisation layer (7) over the insulating layer (1) and the titanium nitride (6), the metallisation layer (7) being in electrical contact with the silicon (2) via the titanium nitride (6).
Claim 2
Independent Claim
126 words
A method of manufacturing a semiconductor device including the steps of providing an electrically insulating layer over a silicon layer or a silicon substrate and exposing a region.of the silicon via a hole in the insulating layer, characterised by the subsequent steps of depositing titanium (4) over the insulating layer (1) and the exposed silicon region (2), causing titanium disilicide (5) to be formed locally at the exposed region of silicon, removing unreacted titanium (4) from the insulating layer (1), converting at least part of the titanium disilicide (5) to titanium nitride (6) and providing a metallisation layer (7) over the insulating layer (1) and the titanium nitride (6), the metallisation layer (7) being in electrical contact with the silicon (2) via the titanium nitride (6).
Claim 3
Dependent Claim
20 words
A method as claimed in claim 1, characterised in that the silicon (2) is polycrystalline or single crystal in form.
Claim 4
Dependent Claim
21 words
A method as claimed in claim 1 or claim 2, characterised in that the insulating layer (1) is of silicon dioxide.
Claim 5
Independent Claim
32 words
A method as claimed in any one of the preceding claims, characterised in that the titanium disilicide (5) is formed by a rapid anneal process comprising heating at 850°C for twenty seconds.
Claim 6
Independent Claim
24 words
A method as claimed in any one of the preceding claims, characterised in that the unreacted titanium (4) is removed by a selective etch.
Claim 7
Independent Claim
28 words
A method as claimed in any one of the preceding claims, characterised in that the titanium disilicide (5) is converted to titanium nitride (6) by annealing in nitrogen.
Claim 8
Independent Claim
21 words
A method as claimed in any one of the preceding claims characterised in that the metallisation (7) is of pure aluminium.
References Cited (Backward Citations)
No citation records indexed.
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