EP0185343A1
Expired / Lapsed
EP
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Charge transfer device
Assignee: Toshiba Corp
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Filing: 1985-12-16
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Granted: —
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Expires: 2005-12-16
Abstract
Abstract A solid-state image sensing device has a plurality of first CCDs (14A-14D) for transferring a charge along the column direction and a second CCD (16) for transferring the charge supplied from the first CCDs (14A-14D) along the row direction. The first and second CCDs (14A-14D, 16) have n-type first transfer channels (24A-24D) and an n-type second transfer channel (26) which are formed on a p-type semiconductor body. The p-type semiconductor body has a first region (18) contacting the bottom surface of the first transfer channels (24A-24D) and a second region (22) contacting the bottom surface of the second transfer channel (26). An impurity concentration of the second region is lower than that of the first region.
Inventors
- 👤 Tetsuo C/O Patent Division Yamada
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-09 06:44
CPC Classifications
H; H10; H10D; H10D62/00; H10D62/10; H10D62/17; H10D62/213; H10D62/335; H10F; H10F39/00; H10F39/10; H10F39/12; H10F39/15; H10F39/153
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
197 words
A charge transfer device comprising: a substrate (20); charge supplying means (10, 14A-14D, 28) including a plurality of supply channels (24A-24D) formed in the surface area of said substrate (20) and extending in a first direction for supplying charges through said sup- " ply channels (24A-24D); and charge coupled device (26, 30A-30H) including a transfer channel (26) formed in the surface area of said substrate (20) in contact with said supply channels (24A-24D) and extending in a second direction different from said first direction and a plurality of first and second electrodes (30A-30H) insulatively formed over said transfer channel (26) and arranged in the second direction, which transfers the charges in the second direction by selectively applying a control voltage to the first and second electrodes (30A-30H), said first electrodes (30A, 30C, 30E, 30G) having portions insulatively formed over said supply channels (24A-24D) for causing the charges from said supply channels (24A-24D) to be received in the transfer channel (26); characterized by further comprising potential control means (18, 22, 26A, 40) for permitting the electrostatic potential energy in said transfer channel (26) to be set at a level lower than that level in each supply channel (24A-24D).
Claim 2
Dependent Claim
197 words
A charge transfer device comprising: a substrate (20); charge supplying means (10, 14A-14D, 28) including a plurality of supply channels (24A-24D) formed in the surface area of said substrate (20) and extending in a first direction for supplying charges through said sup- " ply channels (24A-24D); and charge coupled device (26, 30A-30H) including a transfer channel (26) formed in the surface area of said substrate (20) in contact with said supply channels (24A-24D) and extending in a second direction different from said first direction and a plurality of first and second electrodes (30A-30H) insulatively formed over said transfer channel (26) and arranged in the second direction, which transfers the charges in the second direction by selectively applying a control voltage to the first and second electrodes (30A-30H), said first electrodes (30A, 30C, 30E, 30G) having portions insulatively formed over said supply channels (24A-24D) for causing the charges from said supply channels (24A-24D) to be received in the transfer channel (26); characterized by further comprising potential control means (18, 22, 26A, 40) for permitting the electrostatic potential energy in said transfer channel (26) to be set at a level lower than that level in each supply channel (24A-24D).
Claim 3
Dependent Claim
88 words
A charge transfer device according to claim 1, characterized in that said substrate is a semiconductor substrate, said potential control means includes first and second embedded layers (22, 18) of a first conductivity type formed in said substrate (20), and said transfer channel and supply channels (26, 24A-24D) are formed on the respective first and second embedded layers (22, 18) and are formed of a second conductivity type regions, the impurity concentration of said first embedded (22) layer being lower than that of said second embedded layer (18).
Claim 4
Dependent Claim
50 words
A charge transfer device according to claim 3, characterized in that said charge supplying means includes a plurality of photoelectric transducers (10) for generating said charges and transfer means (14A-14D, 28) which receives the charges from said photoelectric transducers (10) and transfers the received charges in said supply channels (24A-24D).
Claim 5
Dependent Claim
71 words
A charge transfer device according to claim 1, characterized in that said substrate is a semiconductor substrate (20), said supply channels (24A-24D) and transfer channel (26) are formed of a first conductivity type region, said potential control means includes a control region (26A) of the first conductivity type formed in said transfer channel (26), the impurity concentration of said control region (26A) being higher than that of each supply channel (24A-24D).
Claim 6
Dependent Claim
49 words
A charge transfer device according to claim 4, characterized in that said potential control means further has an embedded layer (18) of a second conductivity type formed in said substrate, the bottom surfaces of said supply and transfer channels (24A-24D, 26) being in contact with said embedded layer (18).
Claim 7
Dependent Claim
50 words
A charge transfer device according to claim 5, characterized in that said charge supplying means includes a plurality of photoelectric transducers (10) for generating said charges and transfer means (14A-14D, 28) which receives the charges from said photoelectric transducers (10) and transfers the received charges in said supply channels (24A-24D).
Claim 8
Dependent Claim
60 words
A charge transfer device according to claim 1, characterized in that said potential control means includes an insulating layer (40) formed on said supply channels with a first thickness (40A) and on said transfer channel (26) with a second thickness (40B) larger than said first thickness (40A), said first and second electrodes (30A-30H) being formed on said insulating layer (40).
Claim 9
Dependent Claim
35 words
A charge transfer device according to claim 7, characterized in that said substrate is a semiconductor substrate (20), and said supply channels (24A-24D) and transfer channel (26) are formed of a first conductivity type region.
Claim 10
Dependent Claim
50 words
A charge transfer device according to claim 8, characterized in that said potential control means further has an embedded layer (18) of a second conductivity type formed in said substrate (20), the bottom surface of said supply and transfer channels (24A-24D, 26) being in contact with said embedded layer (18).
Claim 11
Dependent Claim
50 words
A charge transfer device according to claim 9, characterized in that said charge supplying means includes a plurality of photoelectric transducers (10) for generating said charges and transfer means (14A-14D, 28) which receives the charges from said photoelectric transducers (10) and transfers the received charges in said supply channels (24A-24D).
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