EP0183204A2
Expired / Lapsed
EP
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Process for fabricating semiconductor integrated circuit devices
Assignee: Hitachi Ltd
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Filing: 1985-11-22
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Granted: —
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Expires: 2005-11-22
Abstract
Abstract After contact holes (23, 22) for the P- and N-type source or drain regions (12, 8) of P- and N-channel MOSFETs (6, 5) have been made at a common step, an N-type impurity a ion-implanted into at least the N-type source or drain regions (12) through the contact holes (22). The N-type impurity is annealed to form an N-type region (9) which is deeper than the N-type source or drain regions (12). During the annealing treatment, the N-type source or drain regions (12) are covered with an insulating film.
Inventors
- 👤 Shuji Ikeda
- 👤 Kouichi Nagasawa
- 👤 Makoto Motoyoshi
- 👤 Kiyoshi Hitachi Dai 2 Yushin Dormitory Nagai
- 👤 Satoshi Meguro
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-01 11:22
CPC Classifications
H; H10; H10D; H10D62/00; H10D62/10; H10D62/13; H10D62/149; H10D62/151; H10D84/00; H10D84/01; H10D84/0123; H10D84/0126; H10D84/0165; H10D84/017; H10D84/0186; H10D84/02; H10D84/03; H10D84/038; H10D84/80; H10D84/82; H10D84/83; H10D84/85; H10D84/859; H10P; H10P30/00; H10P30/20; H10P30/22
Claims Analysis
Total Claims: 20
Claim 1
Independent Claim
115 words
A process for fabricating a semiconductor integrated circuit device, comprising: (a) the step of forming an N-channel MOSFET (5) having an N-type semiconductor region ( 8) and a P-channel MOSFET (6) having a P-type semiconductor region (12) in a semiconductor substrate (1), (b) the step of forming an insulating film (16) for covering said MOSFETs (5, 6), (c) the step of forming contact holes (22...26) in said insulating film (16), at least one (22, 23) of said contact holes being formed on each of said N- and P-type semiconductor regions (8, 12), and (d) the step of ion-implanting an N-type impurity (9) into at least said N-type semiconductor region (8) through said contact hole (22).
Claim 2
Dependent Claim
115 words
A process for fabricating a semiconductor integrated circuit device, comprising: (a) the step of forming an N-channel MOSFET (5) having an N-type semiconductor region ( 8) and a P-channel MOSFET (6) having a P-type semiconductor region (12) in a semiconductor substrate (1), (b) the step of forming an insulating film (16) for covering said MOSFETs (5, 6), (c) the step of forming contact holes (22...26) in said insulating film (16), at least one (22, 23) of said contact holes being formed on each of said N- and P-type semiconductor regions (8, 12), and (d) the step of ion-implanting an N-type impurity (9) into at least said N-type semiconductor region (8) through said contact hole (22).
Claim 3
Dependent Claim
169 words
A process for fabricating a semiconductor integrated circuit device, comprising: (a) the step of forming an N-channel MOSFET (5) having an N-type semiconductor region (8) and a P-channel MOSFET (6) having a P-type semiconductor region (12) on a main surface of a semiconductor substrate (1), (b) the step of forming a first insulating film (16) for covering said MOSFETs (5, 6), (c) the step of forming contact holes (22...26) in said first insulating film (16), at least one of said contace holes (22, 23) being formed on each of said N- and P-type semiconductor regions (8, 12), (d) the step of forming a second insulating film (32) for covering a part of said main surface of said substrate (1), said part being exposed to the outside through said contact holes (22, 23), and (e) the step of ion-implanting an N-type impurity (9) into at least said N-type semiconductor region (8) through said contact hole (22), said impurity being introduced into said substrate (1) through said second insulating film (32).
Claim 4
Dependent Claim
169 words
A process for fabricating a semiconductor integrated circuit device, comprising: (a) the step of forming an N-channel MOSFET (5) having an N-type semiconductor region (8) and a P-channel MOSFET (6) having a P-type semiconductor region (12) on a main surface of a semiconductor substrate (1), (b) the step of forming a first insulating film (16) for covering said MOSFETs (5, 6), (c) the step of forming contact holes (22...26) in said first insulating film (16), at least one of said contace holes (22, 23) being formed on each of said N- and P-type semiconductor regions (8, 12), (d) the step of forming a second insulating film (32) for covering a part of said main surface of said substrate (1), said part being exposed to the outside through said contact holes (22, 23), and (e) the step of ion-implanting an N-type impurity (9) into at least said N-type semiconductor region (8) through said contact hole (22), said impurity being introduced into said substrate (1) through said second insulating film (32).
Claim 5
Dependent Claim
118 words
A process for fabricating a semiconductor integrated circuit device, comprising: (a) the step of forming a first semiconductor region (8) of first conductivity type and a second semiconductor region (12) of second conductivity type in a semiconductor substrate .(1), (b) the step of forming an insulating film (16) for covering said first and second semiconductor regions (8, 12), (c) the step of forming contact holes (22...26) in said insulating film, at least one of said contact holes (22, 23) being formed in each of said first and second semiconductor regions (8, 12), and (d) the step of ion-implanting an impurity (9) of first conductivity type into at least said first semiconductor region (() through said contact hole (22).
Claim 6
Dependent Claim
118 words
A process for fabricating a semiconductor integrated circuit device, comprising: (a) the step of forming a first semiconductor region (8) of first conductivity type and a second semiconductor region (12) of second conductivity type in a semiconductor substrate .(1), (b) the step of forming an insulating film (16) for covering said first and second semiconductor regions (8, 12), (c) the step of forming contact holes (22...26) in said insulating film, at least one of said contact holes (22, 23) being formed in each of said first and second semiconductor regions (8, 12), and (d) the step of ion-implanting an impurity (9) of first conductivity type into at least said first semiconductor region (() through said contact hole (22).
Claim 7
Dependent Claim
174 words
A process for fabricating a semiconductor integrated circuit device, comprising: (a) the step of forming a first semiconductor region (8) of first conductivity type and a second semiconductor region (12) of second conductivity type in a main surface of a semiconductor substrate (1), (b) the step of forming a first insulating film (16) for covering said first and second semiconductor regions (8, 12), (c) the step of forming contact holes (22...26) in said first insulating film (16), at least one of said contact holes (22, 23) being formed on each of said first and second semiconductor regions (8, 12), (d) the step of forming a second insulating film (32) for covering a part of said main surface of said substrate (1), said part being exposed to the outside through said contact holes (22, 23), and (e) the step of ion-implanting an impurity (9) of first conductivity type into at least said first semiconductor region (8) through said contact hole (22), said impurity being introduced into said substrate (1) through said second insulating film (32).
Claim 8
Dependent Claim
174 words
A process for fabricating a semiconductor integrated circuit device, comprising: (a) the step of forming a first semiconductor region (8) of first conductivity type and a second semiconductor region (12) of second conductivity type in a main surface of a semiconductor substrate (1), (b) the step of forming a first insulating film (16) for covering said first and second semiconductor regions (8, 12), (c) the step of forming contact holes (22...26) in said first insulating film (16), at least one of said contact holes (22, 23) being formed on each of said first and second semiconductor regions (8, 12), (d) the step of forming a second insulating film (32) for covering a part of said main surface of said substrate (1), said part being exposed to the outside through said contact holes (22, 23), and (e) the step of ion-implanting an impurity (9) of first conductivity type into at least said first semiconductor region (8) through said contact hole (22), said impurity being introduced into said substrate (1) through said second insulating film (32).
Claim 9
Dependent Claim
123 words
A process for fabricating a semiconductor integrated circuit, comprising: (a) the step of forming a first insulating film (16) for covering a semiconductor region (8) formed on a main surface of a semiconductor substrate (1), (b) the step of forming a contact hole (22) in said first insulating film (16), said contact hole being formed on said semiconductor region (8), (c) the step of forming a second insulating film (32) for covering a part of said main surface of said substrate (1), said part being exposed to the outside through said contact hole (22), and (d) the step of ion-implanting an impurity (9) into said semiconductor region (8), said impurity being introduced into said substrate (1-) through said second insulating film (32) .
Claim 10
Dependent Claim
123 words
A process for fabricating a semiconductor integrated circuit, comprising: (a) the step of forming a first insulating film (16) for covering a semiconductor region (8) formed on a main surface of a semiconductor substrate (1), (b) the step of forming a contact hole (22) in said first insulating film (16), said contact hole being formed on said semiconductor region (8), (c) the step of forming a second insulating film (32) for covering a part of said main surface of said substrate (1), said part being exposed to the outside through said contact hole (22), and (d) the step of ion-implanting an impurity (9) into said semiconductor region (8), said impurity being introduced into said substrate (1-) through said second insulating film (32) .
Claim 11
Dependent Claim
28 words
The process of claim 1 or 2, wherein said N-type impurity is ion-implanted into said N- and P-type semiconductor regions (8, 12) through said contact holes (22, 23).
Claim 12
Dependent Claim
31 words
The process of claim 1, 2 or 6, wherein the dosage of said N-type impurity ion-implanted is lower than the concentration of the P-type impurity in said P-type semiconductor region (12).
Claim 13
Dependent Claim
49 words
The process of any of claims 1 to 4, 6 and 7, further comprising the step of forming a mask (27; 28) for said ion-implantation covering at least said contact hole (23) on said P-type semiconductor region (12), wherein said ion-implantation is conducted by using said mask (27; 28).
Claim 14
Dependent Claim
16 words
The process of claim 8, wherein said mask (27; 28) is made of a resist film.
Claim 15
Dependent Claim
19 words
The process of any of claims 1 to 4 and 6 to 9, wherein said N-type impurity is phosphor.
Claim 16
Dependent Claim
27 words
The process of any of claims 8 to 10, wherein said mask (27) covers a part except said contact hole (22) on said N-type semiconductor region (8).
Claim 17
Dependent Claim
50 words
The process of any of claims 1 and 6 to 11, comprising the step of forming wiring layers (14, 15, 17) made of a polycrystalline silicon film on said semiconductor substrate (1), wherein said contact hole (25, 26) is formed on at least one of said wiring layers (15, 17).
Claim 18
Dependent Claim
20 words
The process of claim 8, wherein said mask covers said N-type semiconductor region except said one or more contact holes.
Claim 19
Dependent Claim
43 words
The process of claim 8 or 13, comprising the step of forming said semiconductor substrate (1) with wiring layers (14, 15, 17) made of a polycrystalline silicon film, wherein at least one of said wiring layers is formed thereon with said contact holes.
Claim 20
Dependent Claim
38 words
The process of any of claims 2, 4 and 5 to 14, wherein said second insulating film (32) is made of a silicon oxide film which is formed by oxidizing the exposed main surface of said substrate (1).
References Cited (Backward Citations)
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