EP0183016A1
Expired / Lapsed
EP
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Material for a semiconductor device and process for its manufacture
Assignee: Sumitomo Electric Industries Ltd
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Filing: 1985-10-03
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Granted: —
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Expires: 2005-10-03
Abstract
Abstract A material for use in the manufacture of semiconductor devices, a process for manufacturing the material, and a heat radiator structure for a semiconductor device. The material is a binary Al-Si alloy containing 30-60% by weight of Si. <??>This material can be produced by powder metallurgy techniques, such as by preparing a dispersion of Si powder in Al by mechanical alloying or by applying gas atomization, after which the powder is formed by hot extrusion, e.g. into radiation fins. <??>The heat radiator structure consists of the radiation fins, made from the Al-Si alloy, glued to the substrate.
Inventors
- 👤 Yoshiaki C/O Itami Works Itoh
- 👤 Yusuke C/O Itami Works Odani
- 👤 Kiyoaki C/O Itami Works Akechi
- 👤 Nobuhito C/O Itami Works Kuroishi
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-04 15:50
CPC Classifications
C; C22; C22C; C22C1/00; C22C1/04; C22C1/0408; C22C1/0416; H; H10; H10W; H10W40/00; H10W40/20; H10W40/25; H10W40/257; H10W40/70; H10W40/77; H10W70/00; H10W70/60; H10W70/67; H10W70/68; H10W70/682; H10W72/00; H10W72/30; H10W72/381; H10W72/50; H10W72/551; H10W72/552; H10W72/5522; H10W72/851; H10W72/874; H10W72/877; H10W72/884; H10W90/00; H10W90/701; H10W90/721; H10W90/724; H10W90/731; H10W90/737; H10W90/751; H10W90/756; Y; Y10; Y10S; Y10S165/00; Y10S165/905
Claims Analysis
Total Claims: 24
Claim 1
Independent Claim
21 words
A material for a semiconductor device, comprising aluminum alloy containing 30-60% by weight of Si and Al as the remaining part.
Claim 2
Dependent Claim
21 words
A material for a semiconductor device, comprising aluminum alloy containing 30-60% by weight of Si and Al as the remaining part.
Claim 3
Dependent Claim
27 words
A material for a semiconductor device as claimed in claim 1, wherein the aluminum alloy includes initially crystallized Si having a size of 50 µm or smaller.
Claim 4
Dependent Claim
28 words
A material for a semiconductor device as claimed in claim 1, wherein the aluminum alloy has a thermal expansion coefficient of 18 x 10 -6 /°C or less.
Claim 5
Dependent Claim
28 words
A material for a semiconductor device as claimed in claim 2, wherein the aluminum alloy has a thermal expansion coefficient of 18 x 10 -6 /°C or less.
Claim 6
Independent Claim
59 words
A method for producing a material for a semiconductor device, comprising the steps of: solidifying molten material into less than 42-mesh powder through an atomizing method at an average cooling speed of 10 °K/sec or higher; and forming said powder by hot plastic working into a material containing 30-60% by weight of Si and Al as the remaining part.
Claim 7
Independent Claim
59 words
A method for producing a material for a semiconductor device, comprising the steps of: solidifying molten material into less than 42-mesh powder through an atomizing method at an average cooling speed of 10 °K/sec or higher; and forming said powder by hot plastic working into a material containing 30-60% by weight of Si and Al as the remaining part.
Claim 8
Dependent Claim
23 words
A method according to claim 5, wherein the initially crystallized Si contained in said aluminum alloy is 50 µm or smaller in size.
Claim 9
Dependent Claim
21 words
A method according to claim 6, wherein the aluminum alloy has a coefficient of 18 x 10 -6 /°C or less.
Claim 10
Independent Claim
52 words
A method for producing a material for a semiconductor device, comprising the steps of: uniformly dispersing Si powder in an aluminum matrix through a mechanical alloying method and forming said compound material by hot plastic working into an aluminum alloy containing 30-60 by weight of Si and Al as the remaining part.
Claim 11
Independent Claim
52 words
A method for producing a material for a semiconductor device, comprising the steps of: uniformly dispersing Si powder in an aluminum matrix through a mechanical alloying method and forming said compound material by hot plastic working into an aluminum alloy containing 30-60 by weight of Si and Al as the remaining part.
Claim 12
Dependent Claim
17 words
A method according to claim 8, wherein said Si powder has a particle diameter of 0.3-50 µm.
Claim 13
Dependent Claim
52 words
A heat radiation structure for a semiconductor device, said structure being equipped with a substrate as an envelope material for the semiconductor device and an Al-Si alloy layer glued onto said substrate through a junction layer, said Al-Si alloy layer containing 30-60% by weight of Si and functioning as a heat sink.
Claim 14
Dependent Claim
52 words
A heat radiation structure for a semiconductor device, said structure being equipped with a substrate as an envelope material for the semiconductor device and an Al-Si alloy layer glued onto said substrate through a junction layer, said Al-Si alloy layer containing 30-60% by weight of Si and functioning as a heat sink.
Claim 15
Dependent Claim
47 words
A heat radiation structure according to claim 10, wherein said envelope material is one selected from a group consisting of Al 2 O 3 , siC, Be0 and A1N or Fe-Ni alloy, Fe-Ni-Co alloy, Mo and W, and compound materials composed of the aforementioned metals and Cu.
Claim 16
Dependent Claim
42 words
A heat radiation structure according to claim 10, wherein said Al-Si alloy contains at least one element selected from a group of Mo, W, Nb, Zr, Cr, Ir, Ti and Fe, the quantity of said element being 10% by weight or less.
Claim 17
Dependent Claim
42 words
A heat radiation structure according to claim 11, wherein said Al-Si alloy contains at least one element selected from a group of Mo, W, Nb, Zr, Cr, Ir, Ti and Fe, the quantity of said element being 10% by weight or less.
Claim 18
Dependent Claim
19 words
A heat radiation structure according to claim 10, wherein said substrate is a laminated ceramic one including multilayer wiring.
Claim 19
Dependent Claim
27 words
A heat radiation structure according to claim 10, wherein the size of the Al-Si alloy includes initially crystallized Si having a size of 50 pm or smaller.
Claim 20
Dependent Claim
25 words
A heat radiation structure according to claim 10, wherein the Al-Si alloy has a thermal expansion coefficient of 18 x 10 -6 /°C or less.
Claim 21
Dependent Claim
23 words
A heat radiation structure according to claim 10, wherein part of the Al-Si alloy layer on said junction layer side is anodic ocidation.
Claim 22
Dependent Claim
23 words
A heat radiation structure according to claim 10, wherein said junction layer is a paste layer containing Ag, BN or Si0 2 .
Claim 23
Dependent Claim
30 words
A heat radiation structure according to claim 10, wherein said junction layer comprises a metal coated layer readily wettable with brazing metal and an Au eutectic crystal or solder layer.
Claim 24
Dependent Claim
22 words
A heat radiation structure according to claim 19, wherein said metal coated layer readily wettable with brazing metal is made of Ni.
References Cited (Backward Citations)
GB404463A
Cited
US3399332A
Cited
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