EP0181501A2
Expired / Lapsed
EP
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Method for making complementary MOS integrated circuit
Assignee: Panasonic Holdings Corp
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Filing: 1985-10-10
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Granted: —
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Expires: 2005-10-10
Abstract
Abstract Method for forming double well region to make complementary MOS integrated circuit comprising: a first ion implantation for selectively injecting impurity of first conductivity type into semiconductor substrate (1) by using a photoresist pattern (8) for mask, a step for forming a thin film (9) on said photoresist pattern (8) and said semiconductor substrate (1) on which said photoresist pattern (8) is not formed, step of removing said photoresist pattern (8) on which said thin film is formed, and ion-implantation second step for selectively injecting impurity of second conductivity type in semiconductor substrate (1) by using said thin film (9) retained after said removing of said mask.
Inventors
- 👤 Toshiaki Umemoto
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-06 00:28
CPC Classifications
H; H10; H10P; H10P30/00; H10P30/20; H10P30/202; H10P30/204; H10D; H10D84/00; H10D84/01; H10D84/0123; H10D84/0126; H10D84/0165; H10D84/0191; H10D84/02; H10D84/03; H10D84/038; H10P30/21; H10P30/212; H10D84/80; H10D84/82; H10D84/83; H10D84/85; H10D84/859
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
100 words
Method for making complementary MOS integrated circuit comprising: a first ion implantation for selectively injecting impurity of first conductivity type into semiconductor substrate by using a photoresist pattern for mask. a step for forming a thin film (9) on said photoresist pattern (8) and said semiconductor substrate on which said photoresist pattern (8) is not formed, step of removing said photoresist pattern (8) on which said thin film (9) is formed, and ion-implantation second step for selectively injecting impurity of second conductivity type in semiconductor substrate (1) by using said thin film (9) retained after said removing of said mash.
Claim 2
Dependent Claim
100 words
Method for making complementary MOS integrated circuit comprising: a first ion implantation for selectively injecting impurity of first conductivity type into semiconductor substrate by using a photoresist pattern for mask. a step for forming a thin film (9) on said photoresist pattern (8) and said semiconductor substrate on which said photoresist pattern (8) is not formed, step of removing said photoresist pattern (8) on which said thin film (9) is formed, and ion-implantation second step for selectively injecting impurity of second conductivity type in semiconductor substrate (1) by using said thin film (9) retained after said removing of said mash.
Claim 3
Dependent Claim
22 words
Method for making complementary MOS integrated circuit in accordance with claim 1, wherein said semiconductor substrate (1) is made from N-type silicon.
Claim 4
Dependent Claim
20 words
Method for making complementary MOS integrated circuit in accordance with claim 1, wherein said thin film is made from aluminum.
Claim 5
Dependent Claim
37 words
Method for making complementary MOS integrated circuit in accordance with claim 1', wherein a dose amount in said ion implantation first step is within a range from 1x10 12 /cm 2 to 1x10 13 /cm 2 .
Claim 6
Dependent Claim
37 words
Method for making complementary MOS integrated circuit in accordance with claim 1, wherein a dose amount in said ion implantation second step is within a range from 1x10 12 /cm 2 to 1x10 13 /cm 2 .
Claim 7
Dependent Claim
122 words
Method for making complementary MOS integrated circuit comprises: a first ion implantation for selectively injecting impurity of first conductivity type in semiconductor substrate by using a photoresist pattern (8) for mask, forming a thin film (9) on said photoresist pattern (8) and said semiconductor substrate (1) on which said photoresist pattern (8) is not formed, removing said photoresist pattern (2) on which said thin film is formed, second ion implantation for selectively injecting impurity of second conductivity type in semiconductor substrate (1) by using said thin film (9) retained after said removing step for mask, and drive-in for forming a N well region (10) and a P well region (11) by diffusing impurities of first and second conductivity type at same time.
Claim 8
Dependent Claim
122 words
Method for making complementary MOS integrated circuit comprises: a first ion implantation for selectively injecting impurity of first conductivity type in semiconductor substrate by using a photoresist pattern (8) for mask, forming a thin film (9) on said photoresist pattern (8) and said semiconductor substrate (1) on which said photoresist pattern (8) is not formed, removing said photoresist pattern (2) on which said thin film is formed, second ion implantation for selectively injecting impurity of second conductivity type in semiconductor substrate (1) by using said thin film (9) retained after said removing step for mask, and drive-in for forming a N well region (10) and a P well region (11) by diffusing impurities of first and second conductivity type at same time.
Claim 9
Dependent Claim
40 words
Method for making complementary MOS integrated circuit in accordance with claim 6, wherein a concentration of impurity of surface of a N well region (10) is within a range from 1x10 16 /cm 3 to 1x10 17 /cm 3 .
Claim 10
Dependent Claim
39 words
Method for making complementary MOS integrated circuit in accordance with claim 6, wherein a concentration of impurity of surface of a P well region (11) within a range from 1x10 16 /cm 2 to 1x10 17 /cm 2 .
References Cited (Backward Citations)
No citation records indexed.
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