EP0181191A2
Expired / Lapsed
EP
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Superconducting device
Assignee: Hitachi Ltd
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Filing: 1985-11-04
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Granted: —
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Expires: 2005-11-04
Abstract
Abstract @ A pair of superconducting electrodes are so formed as to interpose a semiconductor therebetween, and a control electrode is formed on the semiconductor through an insulator film so as to control the superconductive weak coupling state in the semiconductor between the superconducting electrodes. The distance between the superconducting electrodes is determined by the thickness of the superconductor interposed between the two electrodes, whereby the interelectrode distance is settled with a high precision to improve the uniformity of the device characteristic. And in an arrangement where two superconducting electrodes are formed on a semiconductor layer and the superconductive weak coupling state between such two electrodes is controlled by a third electrode, the gain is increadable by furnishing a varied impurity distribution in the semiconductor layer.
Inventors
- 👤 Toshikazu Nishino
- 👤 Mutsuko Miyake
- 👤 Ushio Kawabe
- 👤 Yutaka Harada
- 👤 Masaaki Aoki
- 👤 Mikio Hirano
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-31 17:40
CPC Classifications
H; H10; H10D; H10D84/00; H10D84/01; H10D86/00; H10D86/01; H10N; H10N60/00; H10N60/10; H10N60/128
Claims Analysis
Total Claims: 19
Claim 1
Independent Claim
69 words
A superconducting device comprising a semiconductor, and three electrodes on the semiconductor, two of which electrodes are superconducting electrodes and one of which is a control electrode, the control electrode having an insulator layer between it and the semiconductor and serving to control the superconductive weak coupling state between the superconducting electrodes, the semiconductor being interposed between one of the electrodes and at least one other of the electrodes.
Claim 2
Dependent Claim
69 words
A superconducting device comprising a semiconductor, and three electrodes on the semiconductor, two of which electrodes are superconducting electrodes and one of which is a control electrode, the control electrode having an insulator layer between it and the semiconductor and serving to control the superconductive weak coupling state between the superconducting electrodes, the semiconductor being interposed between one of the electrodes and at least one other of the electrodes.
Claim 3
Dependent Claim
33 words
The superconducting device as defined in claim 1, wherein the semiconductor is interposed between the superconducting electrodes so that the distance between said superconducting electrodes is determined by the thickness of said semiconductor.
Claim 4
Dependent Claim
26 words
The superconducting device as defined in claim 2, wherein the thickness of said semiconductor is less than 10 times the coherent length of an electron pair.
Claim 5
Dependent Claim
34 words
The superconducting device as defined in any one of the preceding claims wherein a projection is formed on said semiconductor substrate, and said superconducting electrodes are formed on the two sides of said projection.
Claim 6
Dependent Claim
25 words
The superconducting device as defined in claim 4, wherein a control electrode is formed in an upper portion of said projection through an insulator film.
Claim 7
Dependent Claim
25 words
The superconducting device as defined in claim 4, wherein a control electrode is formed on the reverse side of said projection through an insulator film.
Claim 8
Dependent Claim
30 words
The superconducting device, as defined in any one of claims 4 to 6 4, wherein the height of said projection is substantially equal to the thickness of said superconducting electrodes.
Claim 9
Dependent Claim
22 words
The superconducting device as defined in any one of the preceding claims 1, wherein said semiconductor layer is shaped to be insular.
Claim 10
Dependent Claim
38 words
The superconducting device as defined in claim 8, wherein said semiconductor layer is formed in an insulator film, and a control electrode is formed on the reverse side of said insulator film with respect to said semiconductor layer.
Claim 11
Dependent Claim
52 words
The superconducting device as defined in claim 8, wherein said semiconductor layer is formed on a pair of superconducting electrodes formed on a first insulator film, and a control electrode is formed through a second insulator film on the reverse side of said semiconductor layer with respect to said first insulator film.
Claim 12
Dependent Claim
77 words
A superconducting device comprising: a semiconductor layer; at least two superconducting electrodes formed in contact with said semiconductor layer; and at least one control electrode for controlling a current flowing between said superconducting electrodes: wherein an impurity contained in said semiconductor layer is so distributed as to form at least one high impurity concentration region having a concentration above a mean value and at least one low impurity concentration region having a concentration below said mean value.
Claim 13
Dependent Claim
77 words
A superconducting device comprising: a semiconductor layer; at least two superconducting electrodes formed in contact with said semiconductor layer; and at least one control electrode for controlling a current flowing between said superconducting electrodes: wherein an impurity contained in said semiconductor layer is so distributed as to form at least one high impurity concentration region having a concentration above a mean value and at least one low impurity concentration region having a concentration below said mean value.
Claim 14
Dependent Claim
35 words
The superconducting device as defined in claim 11, wherein said superconducting electrodes are disposed on one side of said semiconductor layer, while said control electrode is disposed on the other side of said semiconductor layer.
Claim 15
Dependent Claim
21 words
The superconducting device as defined in claim 12, wherein said high impurity concentration region is existent proximate to said control electrode.
Claim 16
Dependent Claim
22 words
The superconducting device as defined in claim 12, wherein said high impurity concentration region is existent in contact with said superconducting electrodes.
Claim 17
Dependent Claim
34 words
The superconducting device as defined in claim 12, wherein said high impurity concentration region consists of a portion existent proximate to said control electrode and a portion existent in contact with said superconducting electrodes.
Claim 18
Dependent Claim
92 words
A superconducting device comprising: a semiconductor projection formed on a semiconductor substrate; a first insulator film formed in an upper portion of said projection; two or more superconducting electrodes formed on the lateral surfaces of said projection and having a thickness equal to or greater than the height of said projection; a second insulator film formed on said first insulator film; and a control electrode formed on said second insulator film: wherein said projection is so formed that the lateral surface thereof has an impurity concentration higher than that of said substrate.
Claim 19
Dependent Claim
92 words
A superconducting device comprising: a semiconductor projection formed on a semiconductor substrate; a first insulator film formed in an upper portion of said projection; two or more superconducting electrodes formed on the lateral surfaces of said projection and having a thickness equal to or greater than the height of said projection; a second insulator film formed on said first insulator film; and a control electrode formed on said second insulator film: wherein said projection is so formed that the lateral surface thereof has an impurity concentration higher than that of said substrate.
References Cited (Backward Citations)
No citation records indexed.
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