Capacitor built-in integrated circuit packaged unit and process of fabrication thereof

Claim 2

A capacitor built-in integrated circuit packaged unit comprising an electrically conductive support member, 1) first and second lead elements associated with said conductive support member, 2) a stack of a plurality of layers comprising a first insulating layer of a highly dielectric material formed on said conductive support member, an electrically conductive layer formed on said first insulating layer, and a second insulating layer formed on said conductive layer, said conductive layer having a portion exposed by said second insulating layer, 3) a semiconductor integrated circuit chip having first and second electrodes which are electrically isolated from each other, said second insulating layer intervening between said conductive layer and said semiconductor integrated circuit chip, 4) first coupling means electrically connecting the first electrode to said first lead element, and 5) second coupling means electrically connecting the second electrode to the exposed portion of said conductive layer and to said second lead element.

Claim 3

A capacitor built-in integrated circuit packaged unit as set forth in claim 1, wherein said semiconductor integrated circuit chip is bonded to said second insulating layer with an electrically conductive adhesive material.

Claim 4

A capacitor built-in integrated circuit packaged unit as set forth in claim 1, wherein said conductive layer constitutes a first conductive layer of said stack which further comprises a second conductive layer formed on said second insulating layer and wherein said semiconductor integrated circuit chip has a surface portion bonded to said second conductive layer.

Claim 5

A capacitor built-in integrated circuit packaged unit as set forth in claim 1, 2 or 3, wherein said first insulating layer is formed by physical vapor deposition on said conductive support member.

Claim 6

A capacitor built-in integrated circuit packaged unit as set forth in claim 1, 2 or 3, wherein said first insulating layer is formed by chemical vapor deposition on said conductive support member.

Claim 7

A capacitor built-in integrated circuit packaged unit as set forth in claim 1, 2 or 3, wherein said first insulating layer is formed by RF sputtering.

Claim 8

A capacitor built-in integrated circuit packaged unit as set forth in claim 1, 2 or 3, wherein said first insulating layer is formed by depositing a metal material on the said conductive support member and subsequently anodizing the resultant layer to convert the material into a dielectric substance.

Claim 9

A capacitor built-in integrated circuit packaged unit as set forth in claim 1, 2 or 3, wherein said first insulating layer is formed by a reactive insulating film forming method.

Claim 10

A capacitor built-in integrated circuit packaged unit as set forth in claim 3, wherein said first conductive layer is less extensive than said first insulating layer and said second conductive layer is less extensive than said second insulating layer.

Claim 11

A capacitor built-in integrated circuit packaged unit as set forth in claim 9, wherein said second conductive layer is less extensive than said first conductive layer.

Claim 12

A capacitor built-in integrated circuit packaged unit as set forth in claim 1, 2 or 3, wherein said exposed portion of the first named conductive layer has a layer of metal, to which said second coupling means, is connected at one end thereof.

Claim 13

A capacitor built-in integrated circuit packaged unit as set forth in claim 3, wherein said second conductive layer has a layer of metal, to which said semiconductor integrated circuit chip is bonded.

Claim 14

A capacitor built-in integrated circuit packaged unit as set forth in claim 2, wherein said second insulating layer per se is constituted by a layer of an insulating adhesive material by means of which said semiconductor integrated circuit chip is bonded to said conductive layer.

Claim 15

A capacitor built-in integrated circuit packaged unit as set forth in claim 1, 2 or 3, wherein said first lead element is electrically connected to said conductive support member and said second lead element is electrically isolated from said conductive support member.

Claim 16

A capacitor built-in integrated circuit packaged unit as set forth in claim 1, 2 or 3, wherein said dielectric material is selected from the group consisting of titanium oxide, aluminum oxide and barium titanate.

Claim 17

A capacitor built-in integrated circuit packaged unit as set forth in claim 1, 2 or 3, wherein said dielectric material is selected from the group consisting of silicon nitride, tantalum nitride and boron nitride.

Claim 18

A capacitor built-in integrated circuit packaged unit as set forth in claim 1, 2 or 3, wherein said dielectric material is a composite glass.

Claim 19

A capacitor built-in integrated circuit packaged unit as set forth in claim 1, 2 or 3, wherein said first insulating layer 56 is less than 30 microns thick.

Claim 20

A capacitor built-in integrated circuit packaged unit as set forth in claim 1, 2 or 3, wherein the first named conductive layer is constructed of a material selected from the group consisting of titanium, aliminum, tantalum, chromium or nickel.

Claim 21

A capacitor built-in integrated circuit packaged unit as set forth in claim 1, 2 or 3, wherein said second insulating layer is constructed of a material selected from the group consisting of titanium oxide, aluminum oxide and barium titanate.

Claim 22

A capacitor built-in integrated circuit packaged unit as set forth in claim 1, 2 or 3, wherein said second insulating layer is constructed of a material selected from the group consisting of silicon nitride, tantalum nitride and boron nitride.

Claim 23

A capacitor built-in integrated circuit packaged unit as set forth in claim 1, 2 or 3, wherein said second insulating layer is constructed of a composite glass.

Claim 24

A capacitor built-in integrated circuit packaged unit as set forth in claim 3, wherein said second conductive layer is constructed of a material selected from the group consisting of titanium, aliminum, tantalum, chromium or nickel.

Claim 25

A capacitor built-in integrated circuit packaged unit as set forth in claim 1, 2 or 3, wherein said second coupling means comprises a bonding wire electrically connecting said second electrode to the exposed portion of the first named conductive layer and a bonding wire electrically connecting said exposed portion to said second lead element.

Claim 26

A capacitor built-in integrated circuit packaged unit as set forth in claim 1, 2 or 3, wherein said second coupling means comprises a bonding wire electrically connecting said second electrode to the exposed portion of the first named conductive layer and a bonding wire electrically connecting said second electrode directly to said second lead element.

Claim 27

A capacitor built-in integrated circuit packaged unit as set forth in claim 1, 2 or 3, wherein said second coupling means comprises a conductive member fast on said exposed portion of the first named conductive layer, a bonding wire electrically connecting said second electrode to said conductive member and a bonding wire electrically connecting said conductive member to said second lead element.

Claim 28

A capacitor built-in integrated circuit packaged unit as set forth in claim 1, 2 or 3, wherein said conductive support member and said first and second lead elements initially form part of a frame section of a lead frame of metal consisting of a series of frame sections.

Claim 29

A capacitor built-in integrated circuit packaged unit as set forth in claim 1, 2 or 3, wherein said conductive support member constitutes a first conductive support member of two metallic support members which further includes a second conductive support member (68) to which said first conductive support member is bonded with an electrically conductive adhesive material.

Claim 30

A capacitor built-in integrated circuit packaged unit as set forth in claim 1, 2 or 3, wherein said conductive support member is securely connected between said first and second lead elements.

Claim 31

A capacitor built-in integrated circuit packaged unit as set forth in claim 1, 2 or 3, further comprising a body of a polymeric resin having said conductive support member, said stack of layers, said semiconductor integrated circuit chip and said first and second coupling means sealed therein.

Claim 32

A capacitor built-in integrated circuit packaged unit comprising an electrically conductive support member, 1) first and second lead elements associated with said conductive support member, 2) a stack of a plurality of layers comprising a first insulating layer of a highly dielectric material formed on said conductive support member, an electrically conductive layer formed on said first insulating layer, and a second insulating layer formed on said conductive layer, said conductive layer having a portion exposed by said second insulating layer, 3) a semiconductor integrated circuit chip having first and second electrodes which are electrically isolated from each other, said second insulating layer intervening between said conductive layer and said semiconductor integrated circuit chip, 4) first coupling means electrically connecting the first electrode to said first lead element, 5) second coupling means electrically connecting the second electrode to the exposed portion of said conductive layer and to said second lead element, 6) a ceramic package case formed with a concavity having a bottom surface, 7) a metallized layer formed on the bottom surface, said first lead element being fast on said ceramic package case and electrically connected to said metallized layer, 8) said second lead element being fast on said ceramic package case and electrically isolated from said metallized layer, 9) said conductive support member being bonded to said metallized layer with an electrically conductive adhesive material, and 10) a cap member attached to said ceramic package case and closing said concavity.

Claim 33

A capacitor built-in integrated circuit packaged unit comprising an electrically conductive support member, 1) first and second lead elements associated with said conductive support member, 2) a stack of a plurality of layers comprising a first insulating layer of a highly dielectric material formed on said conductive support member, an electrically conductive layer formed on said first insulating layer, and a second insulating layer formed on said conductive layer, said conductive layer having a portion exposed by said second insulating layer, 3) a semiconductor integrated circuit chip having first and second electrodes which are electrically isolated from each other, said second insulating layer intervening between said conductive layer and said semiconductor integrated circuit chip, 4) first coupling means electrically connecting the first electrode to said first lead element, 5) second coupling means electrically connecting the second electrode to the exposed portion of said conductive layer and to said second lead element, 6) a ceramic package case formed with a concavity having a bottom surface, 7) a metallized layer formed on the bottom surface, said first lead element being fast on said ceramic package case and electrically connected to said metallized layer, 8) said second lead element being fast on said ceramic package case and electrically isolated from said metallized layer, 9) said conductive support member being bonded to said metallized layer with an electrically conductive adhesive material, and 10) a cap member attached to said ceramic package case and closing said concavity.

Claim 34

A capacitor built-in integrated circuit packaged unit as set forth in claim 31, wherein said second coupling means comprises a conductive member fast on said exposed portion of the first named conductive layer, a bonding wire electrically connecting said second electrode to said conductive member and a bonding wire electrically connecting said conductive member to said second lead element.

Claim 35

A process of fabricating a capacitor built-in integrated circuit packaged unit, comprising the steps of 1) preparing an electrically conductive support member, first and second lead elements associated with said conductive support member, and a semiconductor integrated circuit chip having first and second electrodes which are electrically isolated from each other, 2) forming a first insulating layer of a highly dielectric material formed on said conductive support member, 3) forming an electrically conductive layer on said first insulating layer, 4) forming a second insulating layer on said conductive layer, said conductive layer having a portion exposed by said second insulating layer, 5) holding said semiconductor integrated circuit chip in position with respect to said conductive support member so that said second insulating layer intervenes between said conductive layer and the semiconductor integrated circuit chip, 6) electrically connecting the first electrode to said first lead element by first coupling means, 7) electrically connecting the second electrode to the exposed portion of said conductive layer and to said second lead element with second coupling means, and 8) sealing said conductive support member, said first and second lead elements, said semiconductor integrated circuit chip, said first and second insulating layers, said conductive layer, and said first and second coupling means with an electrically lowly conductive material.

Claim 36

A process of fabricating a capacitor built-in integrated circuit packaged unit, comprising the steps of 1) preparing an electrically conductive support member, first and second lead elements associated with said conductive support member, and a semiconductor integrated circuit chip having first and second electrodes which are electrically isolated from each other, 2) forming a first insulating layer of a highly dielectric material formed on said conductive support member, 3) forming an electrically conductive layer on said first insulating layer, 4) forming a second insulating layer on said conductive layer, said conductive layer having a portion exposed by said second insulating layer, 5) holding said semiconductor integrated circuit chip in position with respect to said conductive support member so that said second insulating layer intervenes between said conductive layer and the semiconductor integrated circuit chip, 6) electrically connecting the first electrode to said first lead element by first coupling means, 7) electrically connecting the second electrode to the exposed portion of said conductive layer and to said second lead element with second coupling means, and 8) sealing said conductive support member, said first and second lead elements, said semiconductor integrated circuit chip, said first and second insulating layers, said conductive layer, and said first and second coupling means with an electrically lowly conductive material.

Claim 37

A process of fabricating a capacitor built-in integrated circuit packaged unit as set forth in claim 33, further comprising the step of bonding said semiconductor integrated circuit chip to said second insulating layer with an electrically conductive adhesive material.

Claim 38

A process of fabricating a capacitor built-in integrated circuit packaged unit as set forth in claim 33, wherein said conductive layer constitutes a first conductive layer of said stack, the process further comprising the step of forming a second conductive layer on said second insulating layer and bonding said semiconductor integrated circuit chip to said second conductive layer.

Claim 39

A process of fabricating a capacitor built-in integrated circuit packaged unit as set forth in claim 33, further comprising the step of bonding said semiconductor integrated circuit chip to said second insulating layer with an electrically insulating adhesive material.

Claim 40

A process of fabricating a capacitor built-in integrated circuit packaged unit as set forth in claim 33, further comprising the step of bonding said semiconductor integrated circuit chip to said second insulating layer with an electrically insulating adhesive material which forms said second insulating layer.

Claim 41

A process of fabricating a capacitor built-in integrated circuit packaged unit as set forth in claim 33, 34 or 35, wherein said dielectric material is selected from the group consisting of titanium oxide, aluminum oxide and barium titanate.

Claim 42

A process of fabricating a capacitor built-in integrated circuit packaged unit as set forth in claim 33, 34 or 35, wherein said dielectric material is selected from the group consisting of silicon nitride, tantalum nitride and boron nitride.

Claim 43

A process of fabricating a capacitor built-in integrated circuit packaged unit as set forth in claim 33, 34 or 35, wherein said dielectric material is formed of a composite glass.

Claim 44

A process of fabricating a capacitor built-in integrated circuit packaged unit as set forth in claim 33, 34 or 35, wherein said first insulating layer is formed by physical vapor deposition on said conductive support member.

Claim 45

A process of fabricating a capacitor built-in integrated circuit packaged unit as set forth in claim 33, 34 or 35, wherein said first insulating layer is formed by chemical vapor deposition on said conductive support member.

Claim 46

A process of fabricating a capacitor built-in integrated circuit packaged unit as set forth in claim 33, 34 or 35, wherein said first insulating layer is formed by RF sputtering.

Claim 47

A process of fabricating a capacitor built-in integrated circuit packaged unit as set forth in claim 33, 34 or 35, wherein said first insulating layer is formed by depositing a metal material on the said conductive support member and subsequently anodizing the resultant layer to convert the material into a dielectric substance.

Claim 48

A process of fabricating a capacitor built-in integrated circuit packaged unit as set forth in claim 33, 34 or 35, wherein said first insulating layer is formed by a reactive insulating film forming method.

Claim 49

A process of fabricating a capacitor built-in integrated circuit packaged unit as set forth in claim 33, 34 or 35, wherein the first named conductive layer is constructed of a material selected from the group consisting of titanium, aliminum, tantalum, chromium or nickel.

Claim 50

A process of fabricating a capacitor built-in integrated circuit packaged unit as set forth in claim 33, 34 or 35, wherein said the first named conductive layer is formed by physical vapor deposition on said first insulating layer.

Claim 51

A process of fabricating a capacitor built-in integrated circuit packaged unit as set forth in claim 33, 34 or 35, wherein said the first named conductive layer is formed by chemical vapor deposition on said first insulating layer.

Claim 52

A process of fabricating a capacitor built-in integrated circuit packaged unit as set forth in claim 33, 34 or 35, wherein the first named conductive layer is formed by bonding a film of metal to said first insulating layer with an adhesive material.

Claim 53

A process of fabricating a capacitor built-in integrated circuit packaged unit as set forth in claim 33, 34 or 35, wherein the first named conductive layer is formed by compression bonding a film of metal to said first insulating layer.

Claim 54

A process of fabricating a capacitor built-in integrated circuit packaged unit as set forth in claim 33, 34 or 35, wherein said second insulating layer is formed of a material selected from the group consisting of titanium oxide, aluminum oxide and barium titanate.

Claim 55

A process of fabricating a capacitor built-in integrated circuit packaged unit as set forth in claim 33, 34 or 35, wherein said second insulating layer is formed of a material selected from the group consisting of silicon nitride, tantalum nitride and boron nitride.

Claim 56

A process of fabricating a capacitor built-in integrated circuit packaged unit as set forth in claim 33, 34 or 35, wherein said second insulating layer is formed of a composite glass.

Claim 57

A process of fabricating a capacitor built-in integrated circuit packaged unit as set forth in claim 33, 34 or 35, wherein said second insulating layer is formed by physical vapor deposition on the first named conductive layer.

Claim 58

A process of fabricating a capacitor built-in integrated circuit packaged unit as set forth in claim 33, 34 or 35, wherein said second insulating layer is formed by chemical vapor deposition on the first named conductive layer.

Claim 59

A process of fabricating a capacitor built-in integrated circuit packaged unit as set forth in claim 33, 34 or 35, wherein said second insulating layer is formed by RF sputtering.

Claim 60

A process of fabricating a capacitor built-in integrated circuit packaged unit as set forth in claim 33, 34 or 35, wherein said second insulating layer is formed by depositing a metal material on the the first named conductive layer and subsequently anodizing the resultant layer to convert the material into a dielectric substance.

Claim 61

A process of fabricating a capacitor built-in integrated circuit packaged unit as set forth in claim 33, 34 or 35, wherein said second insulating layer is formed by a reactive insulating film forming method.

Claim 62

A process of fabricating a capacitor built-in integrated circuit packaged unit as set forth in claim 35, wherein said second conductive layer is constructed of a material selected from the group consisting of titanium, aliminum, tantalum, chromium or nickel.

Claim 63

A process of fabricating a capacitor built-in integrated circuit packaged unit as set forth in claim 35, wherein said second conductive layer is formed by physical vapor deposition on said second insulating layer.

Claim 64

A process of fabricating a capacitor built-in integrated circuit packaged unit as set forth in claim 35, wherein said second conductive layer is formed by chemical vapor deposition on said second insulating layer.

Claim 65

A process of fabricating a capacitor built-in integrated circuit packaged unit as set forth in claim 35, wherein said second conductive layer is formed by bonding a film of metal to said second insulating layer with an adhesive material.

Claim 66

A process of fabricating a capacitor built-in integrated circuit packaged unit as set forth in claim 35, wherein said second conductive layer is formed by compression bonding a film of metal to said second insulating layer.

Claim 67

A process of fabricating a capacitor built-in integrated circuit packaged unit as set forth in claim 35, wherein said first conductive layer is formed to be less extensive than said first insulating layer and said second conductive layer is less extensive than said second insulating layer.

Claim 68

A process of fabricating a capacitor built-in integrated circuit packaged unit as set forth in claim 64, wherein said second conductive layer is formed to be less extensive than said first conductive layer.

Claim 69

A process of fabricating a capacitor built-in integrated circuit packaged unit as set forth in claim 33, 34 or 35, further comprising the steps of forming a layer of metal on said exposed portion of the first named conductive layer and connecting said second coupling means to said layer of metal at one end of the second coupling means.

Claim 70

A process of fabricating a capacitor built-in integrated circuit packaged unit as set forth in claim 35, further comprising the steps of forming a layer of metal on said second conductive layer and bonding said semiconductor integrated circuit chip to said layer of metal with an electrically conductive adhesive.

Claim 71

A process of fabricating a capacitor built-in integrated circuit packaged unit as set forth in claim 33, 34 or 35, wherein said conductive support member and said first and second lead elements are prepared to initially form part of a frame section of a lead frame of metal consisting of a series of frame sections.

Claim 72

A process of fabricating a capacitor built-in integrated circuit packaged unit as set forth in claim 33, 34 or 35, wherein said conductive support member is prepared as a first conductive support member, the process further comprising the steps of preparing a second conductive support member (68) and bonding said first conductive support member to the second conductive support member with an electrically conductive adhesive material.

Claim 73

A process of fabricating a capacitor built-in integrated circuit packaged unit as set forth in claim 33, 34 or 35, further comprising the steps of forming a lead frame having a frame section including said first and second lead elements and having an open space between the first and second lead elements, and securely connecting said conductive support member is between said first and second lead elements through said open space.

Claim 74

A process of fabricating a capacitor built-in integrated circuit packaged unit as set forth in claim 33, 34 or 35, wherein said lowly conductive material is a polymeric resin having said conductive support member, said stack of layers, said semiconductor integrated circuit chip and said first and second coupling means sealed therein.

Claim 75

A process of fabricating a capacitor built-in integrated circuit packaged unit as set forth in claim 33, 34 or 35, further comprising the steps of 1) preparing a ceramic package case formed with a concavity having a bottom surface and having a metallized layer on the bottom surface, said first lead element being fast on said ceramic package case and electrically connected to said metallized layer, said second lead element being fast on said ceramic package case and electrically isolated from said metallized layer, 2) bonding said conductive support member bonded to said metallized layer with an electrically conductive adhesive material, and 3) mounting a cap member onto said ceramic package case for closing said concavity after said first electrode on said semiconductor integrated circuit chip is electrically connected to said first lead element by said first coupling means and said second electrode is electrically connected to the exposed portion of the first named conductive layer and to said second lead element with said second coupling means.