EP0178654A2
Expired / Lapsed
EP
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Method of manufacturing a semiconductor device comprising a method of patterning an organic material
Assignee: Toshiba Corp
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Filing: 1985-10-16
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Granted: —
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Expires: 2005-10-16
Abstract
Abstract O DisClosed is a method of manufacturing a semiconductor device comprising the step of forming an organic material film on the surface of a semiconductor substrate, and the step of irradiating an excimer laser beam onto the organic material film in an atmosphere containing oxygen gas so as to scan in accordance with a specified pattern, thus removing an irradiated portion of the organic material film to thereby form an organic material pattern. The organic material pattern is directly formed without need of a developing step.
Inventors
- 👤 Tsuneo C/O Patent Division Atsumi
- 👤 Shunichi C/O Patent Division Hiraki
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-06 00:01
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/68; H10P14/683; G; G03; G03F; G03F7/00; G03F7/004; G03F7/039; H10P50/00; H10P50/20; H10P50/28; H10P50/286; H10P50/287; H10W; H10W10/00; H10W10/01; H10W10/011; H10W10/014; H10W10/10; H10W10/17
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
70 words
A method of manufacturing a semiconductor device comprising the step of forming an organic material film on the surface of a semiconductor substrate, and the step of irradiating an excimer laser beam onto said organic material film in an atmosphere containing oxygen gas so as to scan in accordance with a specified pattern; thus removing an irradiated portion of said organic material film to thereby form an organic material pattern.
Claim 2
Independent Claim
70 words
A method of manufacturing a semiconductor device comprising the step of forming an organic material film on the surface of a semiconductor substrate, and the step of irradiating an excimer laser beam onto said organic material film in an atmosphere containing oxygen gas so as to scan in accordance with a specified pattern; thus removing an irradiated portion of said organic material film to thereby form an organic material pattern.
Claim 3
Dependent Claim
39 words
A method of manufacturing a semiconductor device as set forth in claim 1, characterized in that said organic material film is formed of a material selected from the group consisting of polyimide resin, silicon resin, epoxy resin and resist.
Claim 4
Dependent Claim
27 words
A method of manufacturing a semiconductor device as set forth in claim 1, characterized in that said organic material pattern is used as a field isolation film.
Claim 5
Dependent Claim
26 words
A method of manufacturing a semiconductor device as set forth in claim 1, characterized in that said organic material pattern is used as an interlayer insulator.
Claim 6
Dependent Claim
26 words
A method of manufacturing a semiconductor device as set forth in claim 1, characterized in that said organic material pattern is used as an etching mask.
References Cited (Backward Citations)
No citation records indexed.
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