Integrated circuit semiconductor device formed on a wafer

Claim 2

An integrated circuit semiconductor device characterized in that it comprises : a semiconductor wafer (1) having a plurality of circuit blocks (2) formed therein and an intermediate area (3) formed in said semiconductor wafer between said circuit blocks, electrically isolating said circuit blocks from each other; and an interconnecting film comprising an insulating film (5;10;15) and an interconnecting circuit (6) formed on a surface of said insulative film, said interconnecting film being placed on said semiconductor wafer in alignment with each other, and said interconnecting circuit being connected to said circuit blocks to complete said integrated circuit semiconductor device.

Claim 3

An integrated circuit semiconductor device according to claim 1, characterized in that each of said circuit blocks (2) has a plurality of first bonding means (4) having a predetermined layout pattern thereon, said interconnecting circuit (6) has a plurality of second bonding means (6B) on a surface of said insulative film arranged to correspond to said first bonding means, and said second bonding means are bonded respectively to said corresponding first bonding means, thus connecting said circuit blocks to said interconnecting circuit.

Claim 4

An integrated circuit semiconductor device according to any one of claims 1 and 2, characterized in that said circuit blocks are arranged in a matrix fashion.

Claim 5

An integrated circuit semiconductor device, characterized in that it comprises : a semiconductor wafer (1) having a plurality of circuit blocks (2) formed therein containing a defective circuit block and an intermediate area (3) formed in said semiconductor wafer between said circuit blocks, electrically isolating said circuit blocks from each other ; a flexible interconnecting film comprising a flexible insulative film (10) and an interconnecting circuit (6) formed on said flexible insulative film; and a repair chip (8) bonded on said defective circuit block, said repair chip having a replaceable circuit with that of said defective circuit block, said flexible interconnecting film being placed on said semiconductor wafer and said repair chip in alignment with each other and said interconnecting circuit being connected to said circuit blocks and to said repair chip to complete said integrated circuit semiconductor device, the protruding top surface of said repair chip being wrapped by said flexible interconnecting film by the aid of the deformation of said flexible insulative film.

Claim 6

An integrated circuit semiconductor device, characterized in that it comprises : a semiconductor wafer (1) having a plurality of circuit blocks (2) formed therein containing a defective circuit block and an intermediate area (3) formed in said semiconductor wafer between said circuit blocks, electrically isolating said circuit blocks from each other ; a flexible interconnecting film comprising a flexible insulative film (10) and an interconnecting circuit (6) formed on said flexible insulative film; and a repair chip (8) bonded on said defective circuit block, said repair chip having a replaceable circuit with that of said defective circuit block, said flexible interconnecting film being placed on said semiconductor wafer and said repair chip in alignment with each other and said interconnecting circuit being connected to said circuit blocks and to said repair chip to complete said integrated circuit semiconductor device, the protruding top surface of said repair chip being wrapped by said flexible interconnecting film by the aid of the deformation of said flexible insulative film.

Claim 7

An integrated circuit semiconductor device according to claim 4, characterized in that each of said circuit blocks (2) and said repair chip (8) has a plurality of first bonding means (4,9) arranged in a predetermined layout pattern thereon, said interconnecting circuit (6) formed on said flexible insulative film has a plurality of second bonding means (6B, 11B) on a surface of said insulative film corresponding to said first bonding means, and said corresponding first bonding means and said second bonding means are bonded to each other, thus connecting said circuit blocks and said repair chip to said interconnecting circuit.

Claim 8

An integrated circuit semiconductor device according to any one of claims 4 and 5, characterized in that said circuit blocks and said repair chip are arranged in a matrix fashion.

Claim 9

An integrated circuit semiconductor device characterized in that it comprises : a semiconductor wafer (1) having a plurality of circuit blocks (2) formed therein containing a defective circuit block and an intermediate area (3) formed in said semiconductor wafer between said circuit blocks, electrically isolating said circuit blocks from each other; a repair chip (8) bonded on said defective circuit block, said repair chip having a replaceable circuit with that of said defective one; an interconnecting film comprising an insulative film (15) and an interconnecting circuit (6) formed thereon, said interconnecting film having a hole (7) opened at the location corresponding to said defective circuit block in said semiconductor wafer, said hole having a size slightly larger than that of said repair chip; and a repair film comprising an insulative film (20) and a plurality of connecting means (16A, 16B) formed on a surface of said insulative film for connecting said repair chip to said interconnecting circuit (6) of said interconnecting film, said interconnecting film being placed on said semiconductor wafer in alignment with said circuit blocks of said semiconductor wafer, and said interconnecting circuit thereon being connected to said circuit blocks of said semiconductor wafer except said repair chip, and said repair film being placed on said repair chip in alignment therewith for connecting said repair chip to said interconnecting circuit.

Claim 10

An integrated circuit semiconductor device characterized in that it comprises : a semiconductor wafer (1) having a plurality of circuit blocks (2) formed therein containing a defective circuit block and an intermediate area (3) formed in said semiconductor wafer between said circuit blocks, electrically isolating said circuit blocks from each other; a repair chip (8) bonded on said defective circuit block, said repair chip having a replaceable circuit with that of said defective one; an interconnecting film comprising an insulative film (15) and an interconnecting circuit (6) formed thereon, said interconnecting film having a hole (7) opened at the location corresponding to said defective circuit block in said semiconductor wafer, said hole having a size slightly larger than that of said repair chip; and a repair film comprising an insulative film (20) and a plurality of connecting means (16A, 16B) formed on a surface of said insulative film for connecting said repair chip to said interconnecting circuit (6) of said interconnecting film, said interconnecting film being placed on said semiconductor wafer in alignment with said circuit blocks of said semiconductor wafer, and said interconnecting circuit thereon being connected to said circuit blocks of said semiconductor wafer except said repair chip, and said repair film being placed on said repair chip in alignment therewith for connecting said repair chip to said interconnecting circuit.

Claim 11

An integrated circuit semiconductor device according to claim 7, characterized in that each of said circuit blocks and said repair chip has a plurality of first bonding means (4,9) arranged in a first predetermined layout pattern, said interconnecting circuit formed on said insulative film has a plurality of second bonding means (6B) arranged in said first predetermined layout pattern corresponding to said first bonding means, and a plurality of third bonding means (6A) arranged in a second predetermined layout pattern, each of said second bonding means being connected to a corresponding one of said third bonding means, each of said connecting means formed on said repair film comprises a fourth bonding means (16A), fifth bonding means (16B) and a conductor connecting said fourth bonding means to said fifth bonding means, said fourth bonding means being arranged in said first predetermined layout pattern and said fifth bonding means being arranged in said second predetermined layout pattern, said second bonding means (6B) are bonded to said corresponding first bonding means (4), thus connecting circuit blocks to said interconnecting circuit, said fourth bonding means (16A) are bonded to said corresponding first bonding means (9) of said repair chip, said fifth bonding means (16B) are bonded to said third bonding means (6A).

Claim 12

An integrated circuit semiconductor device according to any one of claims 7 and 8, characterized in that said circuit blocks and said repair chip are arranged in a matrix fashion.

Claim 13

An integrated circuit semiconductor device according to any one of claims 7 to 9, characterized in that said interconnecting wiring (6) is formed only on a portion of said surface of said insulating film facing said intermediate area of said wafer.

Claim 14

An integrated circuit semiconductor according to any one of claims 8 to 10, characterized in that said repair film has a plurality of said connecting means corresponding to each one of all the circuit blocks of said semiconductor wafer.

Claim 15

An integrated circuit semiconductor device according to any one of the preceding claims, characterized in that said insulative film (5;10;15) is made of a macromolecular compound such as polyimide.

Claim 16

An integrated circuit semiconductor device according to any one of the preceding claims, characterized in that said insulative film (5;10;15) is transparent.