EP0178133A2
Expired / Lapsed
EP
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Semiconductor integrated circuit device
Assignee: Fujitsu Ltd
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Filing: 1985-10-04
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Granted: —
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Expires: 2005-10-04
Abstract
Abstract In a semiconductor integrated circuit device, according to the present invention, a plurality of a field effect transistors are formed on a (110) crystal surface of a III-V group compound semiconductor substrate having a zinc blende type crystal structure.
Inventors
- 👤 Tsukasa Onodera
- 👤 Haruo Kawata
- 👤 Toshiro Futatsugi
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-29 13:59
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/80; H10D30/87; H10D62/00; H10D62/40; H10D62/405; H10D62/80; H10D62/85; H10D84/00; H10D84/01; H10D84/02; H10D84/05
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
33 words
A semiconductor integrated circuit device wherein a plurality of field effect transistors are formed on a (110) crystal surface of a III-V group compound semiconductor substrate having a zinc blende type crystal structure.
Claim 2
Dependent Claim
33 words
A semiconductor integrated circuit device wherein a plurality of field effect transistors are formed on a (110) crystal surface of a III-V group compound semiconductor substrate having a zinc blende type crystal structure.
Claim 3
Dependent Claim
20 words
A semiconductor integrated circuit device according to claim 1, wherein a direction of a drain current is <11 0 >.
Claim 4
Dependent Claim
18 words
A semiconductor integrated circuit device according to claim 1 wherein a direction of a drain current is <001>.
Claim 5
Dependent Claim
19 words
A semiconductor integrated circuit device according to claim 1, wherein directions of a drain current are <llo> and <001>.
Claim 6
Dependent Claim
29 words
A semiconductor integrated circuit device according to claim 1, wherein a direction of a drain current is <001> and a source and drain are formed in a specified direction.
Claim 7
Dependent Claim
41 words
A semiconductor integrated circuit device according to claim 5, wherein an insulating layer having a tensile force is formed on the semiconductor substrate and a source and a drain are positioned so that the direction of the drain current is [001].
Claim 8
Dependent Claim
42 words
A semiconductor integrated circuit device according to claim 5, wherein an insulating layer having a compression force is formed on the semiconductor substrate and a source and a drain current is positioned so that the direction of the drain current is [001].
Claim 9
Dependent Claim
35 words
A semiconductor integrated circuit device according to claim 1, wherein a chip layout is carried out so that a direction of a gate electrode in the chip is parallel or perpendicular to a scribe line.
Claim 10
Dependent Claim
38 words
A semiconductor integrated circuit device wherein a plurality of field effect transistors are form on a (N10) crystal surface of a II-V group compound semiconductor substrate having a zinc blende type crystal structure, where N is an integer.
Claim 11
Dependent Claim
38 words
A semiconductor integrated circuit device wherein a plurality of field effect transistors are form on a (N10) crystal surface of a II-V group compound semiconductor substrate having a zinc blende type crystal structure, where N is an integer.
Claim 12
Dependent Claim
46 words
A semiconductor integrated circuit device according to claim 9, wherein an insulating layer exerting a compressive force is formed on the semiconductor substrate and the source and a drain of the transistors are positioned so that the direction of the drain current is [00 1 ].
References Cited (Backward Citations)
No citation records indexed.
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