EP0176747A1
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Silicon semiconductor substrate with an insulating layer embedded therein and method for forming the same
Assignee: Toshiba Corp
•
Filing: 1985-08-23
•
Granted: —
•
Expires: 2005-08-23
Abstract
Abstract A silicon semiconductor substrate includes an insulating layer embedded therein. The silicon semiconductor substrate (20) comprises a first silicon plate (21), an insulating layer (23) embedded in the first silicon plate so that the Surfaces of the silicon plate and the insulating layer are in a mirror surface, and a second silicon plate (22) united with the first silicon plate and the insulating layer at the mirror surface of the first silicon plate and the insulating layer. The insulating layer (23) is used for forming an isolated region in the second silicon plate.
Inventors
- 👤 Yu C/O Patent Division Ohata
- 👤 Tsuyoshi C/O Patent Division Kuramoto
- 👤 Masaru C/O Patent Division Shimbo
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-31 16:03
CPC Classifications
H; H10; H10P; H10P10/00; H10P10/12; H10P10/128; H10P90/00; H10P90/19; H10P90/1904; H10P90/1906; H10W; H10W10/00; H10W10/01; H10W10/061; H10W10/10; H10W10/181; H10D; H10D84/00; H10D84/40; H10D84/401; H10D84/80; H10D84/82; H10D84/83; H10D84/8314; H10D84/837; H10P90/1914; H10W10/011; H10W10/014; H10W10/041; H10W10/17; H10W10/40; Y; Y10; Y10S; Y10S148/00; Y10S148/012
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
129 words
A silicon semiconductor substrate with an insulating layer embedded therein characterized by comprising: a first monocrystalline silicon plate (21) having a first surface (25); a first insulating layer (23) embedded in said first monocrystalline silicon plate (21) such that the level of a first surface (24) of said first insulating layer (23) coincides with the level of said first surface (25) of said first monocrystalline silicon plate (21); and a second monocrystalline silicon plate (22) having first and second surfaces (26, 27) and united with said first monocrystalline silicon plate (21) and said first insulating layer (23) at the first surfaces (25, 24) of said first monocrystalline silicon plate (21) and said first insulating layer (23) and at the second surface (27) of said second monocrystalline silicon plate (22).
Claim 2
Dependent Claim
129 words
A silicon semiconductor substrate with an insulating layer embedded therein characterized by comprising: a first monocrystalline silicon plate (21) having a first surface (25); a first insulating layer (23) embedded in said first monocrystalline silicon plate (21) such that the level of a first surface (24) of said first insulating layer (23) coincides with the level of said first surface (25) of said first monocrystalline silicon plate (21); and a second monocrystalline silicon plate (22) having first and second surfaces (26, 27) and united with said first monocrystalline silicon plate (21) and said first insulating layer (23) at the first surfaces (25, 24) of said first monocrystalline silicon plate (21) and said first insulating layer (23) and at the second surface (27) of said second monocrystalline silicon plate (22).
Claim 3
Dependent Claim
33 words
A silicon semiconductor substrate with an insulating layer embedded therein according to claim 1, characterized in that the conductivity types of said first and second monocrystalline silicon plates (21, 22) are the same.
Claim 4
Dependent Claim
35 words
A silicon semiconductor substrate with an insulating layer embedded therein according to claim 1, characterized in that the conductivity types of said first and second monocrystalline silicon plates (21, 22) are different from each other.
Claim 5
Dependent Claim
28 words
A silicon semiconductor substrate with an insulating layer embedded therein according to claim 1, characterized in that said first insulating layer is made of a silicon dioxide layer.
Claim 6
Dependent Claim
65 words
A silicon semiconductor substrate with an insulating layer embedded therein according to claim 1, characterized in that said substrate (20) further comprises a second insulating layer (37) which extends from said first surface (26) of said second monocrystalline silicon plate (22) to said first surface (24) of said first insulating layer (23) for forming an isolated semiconductor region in said second monocrystalline silicon plate (22).
Claim 7
Dependent Claim
225 words
A method of manufacturing the silicon semiconductor substrate with an insulating layer embedded therein and claimed in claim 1, characterized by comprising the steps of: forming a first silicon dioxide layer (30) on a first surface (25) of a first monocrystalline silicon plate (21); forming a silicon nitride layer (31) on said first silicon dioxide layer (30); removing said silicon nitride layer (31) on a predetermined region; forming a second silicon dioxide layer (23a) on said predetermined region; removing the remaining silicon nitride layer (31); applying a resist layer (33) on the surfaces of said second silicon dioxide layer (23a) and said first silicon dioxide layer remaining on said first surface of said first monocrystalline silicon plate, the free surface of said resist layer being made flat; etching said resist layer (33) and said second silicon dioxide layer (23a) until the level of the free surface of said second silicon dioxide layer (23a) coincides with the surface level of the first silicon dioxide layer by using the reactive ion etching method; removing an upper part of said second silicon dioxide layer (23a) and said first silicon dioxide layer (30) until said first silicon dioxide layer is completely removed; and uniting a second monocrystalline silicon plate (22) with said first monocrystalline silicon plate (21) and said second silicon dioxide layer (23) at their mutual contacting surfaces.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
Maintenance schedule is calculated for granted US utility patents.