EP0176746A1
Expired / Lapsed
EP
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Manufacture of copper bumps for integrated circuits
Assignee: Siemens AG
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Filing: 1985-08-23
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Granted: —
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Expires: 2005-08-23
Abstract
Abstract Translated from German Wafer für die Drahtkontaktierung können in einem Verfahren mit Höckern versehen werden, die für Lötverbindungen geeignet sind. Dazu werden nach der Erfindung Zwischenschichten (3, 4 ) aufgebracht, damit die Höcker (6) galvanisch aufgebaut und mit lötfähigen Oberflächen (7, 8) versehen werden können. In one process, wafers for wire contacting can be provided with bumps that are suitable for soldered connections. For this purpose, intermediate layers (3, 4 ) are applied according to the invention, so that the bumps (6) can be built up galvanically and provided with solderable surfaces (7, 8).
Inventors
- 👤 Ernst Andrascek
- 👤 Hans Ing. Grad. Hadersbeck
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-03 20:44
CPC Classifications
H; H10; H10W; H10W72/00; H10W72/01; H10W72/012; H10W72/019; H10W72/20; H10W72/231; H10W72/234; H10W72/241; H10W72/242; H10W72/251; H10W72/252; H10W72/255; H10W72/29; H10W72/90; H10W72/921; H10W72/923; H10W72/941; H10W72/9415; H10W72/951; H10W72/952
Claims Analysis
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References Cited (Backward Citations)
FR2313772A1
Cited
US4051508A
Cited
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