EP0175223A1
Expired / Lapsed
EP
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Method of making amorphous semiconductor alloys
Assignee: Energy Conversion Devices Inc
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Filing: 1983-09-23
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Granted: —
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Expires: 2003-09-23
Abstract
Abstract A process for depositing semiconductor alloy films on a substrate by supplying microwave energy to a first gaseous mixture held at subatmospheric pressure in a reaction vessel to establish a glow discharge in the mixture, characterized in supplying microwave energy to a second gaseous mixture remote from the substrate to form free radicals, conveying the free radicals to the vicinity of the substrate and incorporating the free radicals in the film.
Inventors
- 👤 Stanford Robert Ovshinsky
- 👤 Lee Walter
- 👤 Stephen Jenkins Hudgens
- 👤 David Dean Allred
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-31 20:18
CPC Classifications
H; H10; H10F; H10F99/00; H01; H01J; H01J37/00; H01J37/32; H01J37/32009; H01J37/32192; H01J37/32211; H01J37/3222; C; C23; C23C; C23C16/00; C23C16/44; C23C16/50; C23C16/511; H01J37/32266; H01J37/32275; H10P; H10P14/00; H10P14/20; H10P14/24; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2905; H10P14/2923; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P14/3438; H10P14/3441; H10P14/3442; H10P14/3444
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
72 words
A process for depositing a semiconductor alloy film on a substrate by supplying microwave energy to a first gaseous mixture held at subatmospheric pressure in a reaction vessel to establish a glow discharge in the mixture, characterized in supplying microwave energy to a second gaseous mixture remote from the substrate to form free radicals, conveying the free radicals to the vicinity of the substrate and incorporating the free radicals in the film.
Claim 2
Dependent Claim
72 words
A process for depositing a semiconductor alloy film on a substrate by supplying microwave energy to a first gaseous mixture held at subatmospheric pressure in a reaction vessel to establish a glow discharge in the mixture, characterized in supplying microwave energy to a second gaseous mixture remote from the substrate to form free radicals, conveying the free radicals to the vicinity of the substrate and incorporating the free radicals in the film.
Claim 3
Dependent Claim
37 words
A process according to claim 1, characterized by including a silicon bearing gas in the first mixture to form silicon free radicals, and including a hydrogen bearing gas in the second mixture to form hydrogen free radicals.
Claim 4
Dependent Claim
23 words
A process according to claim 2, characterized by including a fluorine bearing gas in the first mixture to form fluorinated silicon free radicals.
Claim 5
Dependent Claim
37 words
A process according to claim 1, characterized by including a silicon bearing gas in the first mixture to form silicon free radicals, and including a fluorine bearing gas in the second mixture to form fluorine free radicals.
Claim 6
Dependent Claim
23 words
A process according to claim 4, characterized by including a hydrogen bearing gas in the first mixture to form hydrogenated silicon free radicals.
Claim 7
Dependent Claim
37 words
A process according to claim 1, characterized by including a germanium bearing gas in the first mixture to form germanium free radicals, and including a hydrogen bearing gas in the second mixture to form hydrogen free radicals.
Claim 8
Dependent Claim
23 words
A process according to claim 6, characterized by including a fluorine bearing gas in the first mixture to form fluorinated germanium free radicals.
Claim 9
Dependent Claim
37 words
A process according to claim 1, characterized by including a germanium bearing has in the first mixture to form germanium free radicals, and including a fluorine bearing gas in the second mixture to form fluorine free radicals.
Claim 10
Dependent Claim
23 words
A process according to claim 8, characterized by including a hydrogen bearing gas in the first mixture to form hydrogenated germanium free radicals.
Claim 11
Dependent Claim
38 words
A process according to claim 1, characterized by including silicon and germanium bearing gases in the first mixture to form silicon-germanium free radicals, and including a hydrogen bearing has in the second mixture to form hydrogen free radicals.
Claim 12
Dependent Claim
23 words
A process according to claim 10, characterized by including a fluorine bearing gas in the first mixture to form fluorinated silicon-germanium free radicals.
Claim 13
Dependent Claim
38 words
A process according to claim 1, characterized by including silicon and germanium bearing gases in the first mixture to form silicon-germanium free radicals, and including a fluorine bearing gas in the second mixture to form fluorine free radicals.
Claim 14
Dependent Claim
23 words
A process according to claim 12, characterized by including a hydrogen bearing gas in the first mixture to form hydrogenated silicon-germanium free radicals.
References Cited (Backward Citations)
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