Patent DE2339842A1 successfully refreshed from Google Patents.
EP0172324A2
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Resin encapsulation type semiconductor device by use of epoxy resin composition
Assignee: Toshiba Corp
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Filing: 1985-05-30
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Granted: —
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Expires: 2005-05-30
Abstract
Abstract There is disclosed a resin encapsulation type semiconductor device having a semiconductor element and a resinous encapsulating material for encapsulating said semiconductor element therein, said resinous encapsulating material comprising a cured product of an epoxy resin composition for encapsulation of semiconductor, comprising: (a) 100 parts by weight of an epoxy resin; (b) 5 to 500 parts by weight of a curing agent having at least two phenolic hydroxyl groups in one molecule; (c) 0.01 to 20 parts by weight of an organic phosphine compound; and (d) 0.1 to 100 parts by weight of at least one antimony oxide selected from the group consisting of diantimony tetroxide, hexaantimony tridecaoxide and diantimony pentoxide. The resin encapsulation type semiconductor device according to the present invention has high reliability in thermal cycle resistance, humidity resistance and the like.
Inventors
- 👤 Hirotoshi C/O Kabushiki Kaisha Toshiba Ikeya
- 👤 Michiya C/O Kabushiki Kaisha Toshiba Higashi
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-02 19:27
CPC Classifications
C; C08; C08G; C08G59/00; C08G59/18; C08G59/40; C08G59/62; C08G59/621; H; H10; H10W; H10W74/00; H10W74/40; H10W74/47; H10W74/473; C08K; C08K3/00; C08K3/18; C08K3/20; C08K3/22; C08K3/2279; C08K5/00; C08K5/49; H10W72/00; H10W72/50; H10W90/00; H10W90/701; H10W90/751; H10W90/756; Y; Y10; Y10T; Y10T428/00; Y10T428/23; Y10T428/239
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
108 words
A resin encapsulation type semiconductor device having a semiconductor element and a resinous encapsulating material for encapsulating said semiconductor element therein, said resinous encapsulating material comprising a cured product of an epoxy resin composition for encapsulation of semiconductor, comprising: (a) 100 parts by weight of an epoxy resin; (b) 5 to 500 parts by weight of a curing agent having at least two phenolic hydroxyl groups in one molecule; (c) 0.01 to 20 parts by weight of an organic phosphine compound; and (d) 0.1 to 100 parts by weight of at least one antimony oxide selected from the group consisting of diantimony tetroxide, hexaantimony tridecaoxide and diantimony pentoxide.
Claim 2
Dependent Claim
108 words
A resin encapsulation type semiconductor device having a semiconductor element and a resinous encapsulating material for encapsulating said semiconductor element therein, said resinous encapsulating material comprising a cured product of an epoxy resin composition for encapsulation of semiconductor, comprising: (a) 100 parts by weight of an epoxy resin; (b) 5 to 500 parts by weight of a curing agent having at least two phenolic hydroxyl groups in one molecule; (c) 0.01 to 20 parts by weight of an organic phosphine compound; and (d) 0.1 to 100 parts by weight of at least one antimony oxide selected from the group consisting of diantimony tetroxide, hexaantimony tridecaoxide and diantimony pentoxide.
Claim 3
Dependent Claim
28 words
The resin encapsulation type semiconductor device according to Claim 1, wherein the epoxy resin is a novolac type epoxy resin having an epoxy equivalent of 170 to 300.
Claim 4
Dependent Claim
36 words
The resin encapsulation type semiconductor device according to Claim 1, wherein the epoxy resin has a chlorine ion content of 10 ppm or less and a hydrolyzable chlorine content of 0.1 % by weight or less.
Claim 5
Dependent Claim
31 words
The resin encapsulation type semiconductor device according to Claim 1, wherein the curing agent is one selected from the group consisting of a phenol resin, polyh/droxystyrene and a phenol aralkyl resin.
Claim 6
Dependent Claim
20 words
The resin encapsulation type semiconductor device according to Claim 4, wherein the curing agent is a novolac type phenol resin.
Claim 7
Dependent Claim
39 words
The resin encapsulation type semiconductor device according to Claim 1, wherein the ratio of the phenolic hydroxyl groups in the curing agent to the epoxy groups in the epoxy resin is within the range of from 0.5 to 1.5.
Claim 8
Dependent Claim
30 words
The resin encapsulation type semiconductor device according to Claim 1, wherein the organic phosphine compound is an arylphosphine selected from the group consisting of triphenylphosphine, tritolylphosphine, 1,2-bis(diphenylphosphino)ethane and bis(diphenyl- phosphino)methane.
Claim 9
Dependent Claim
17 words
The resin encapsulation type semiconductor device according to Claim 7, wherein the organic phosphine compound is triphenylphosphine.
Claim 10
Dependent Claim
27 words
The resin encapsulation type semiconductor device according to Claim 1, wherein the organic phosphine compound is formulated at a level of 0.01 to 5 parts by weight.
Claim 11
Dependent Claim
26 words
The resin encapsulation type semiconductor device according to Claim 1, wherein the antimony oxide is formulated at a level of 0.5 to 30 parts by weight.
Claim 12
Dependent Claim
15 words
The resin encapsulation type semiconductor device according to Claim 1, further containing a halogen compound.
Claim 13
Dependent Claim
17 words
The resin encapsulation type semiconductor device according to Claim 1, further containing fused silica and/or crystalline silica.
References Cited (Backward Citations)
No citation records indexed.
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