Patent US3236977A successfully refreshed from Google Patents.
EP0170022A2
Expired / Lapsed
EP
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Semiconductor power device package for surface mounting
Assignee: International Business Machines Corp
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Filing: 1985-06-19
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Granted: —
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Expires: 2005-06-19
Abstract
Abstract Polyimide tape, thermal expansion matching, and beam leads are used with tape automatic bonding techniques in an automated environment to form an inexpensive miniature semiconductor power device package. The thermal expansion matching interface (9) is included between the semiconductor power device (10) and a metalized pattern (6,7 and 8) on the polyimide tape (1) to absorb thermal expansion mismatches between the power device and the second level package heat sink/mounting surface. Complete testing of the semiconductor device can be accomplished during the manufacturing process, before completion of the package and prior to its incorporation in the next higher packaging level.
Inventors
- 👤 Gustav Schrottke
- 👤 Alan Lee Talkington
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-04 11:35
CPC Classifications
H; H10; H10W; H10W40/00; H10W40/20; H10W40/25; H10W40/255; H10W72/00; H10W72/30; H10W72/60; H10W72/071; H10W72/075; H10W72/381; H10W72/50; H10W72/531; H10W72/533; H10W72/534; H10W72/5363; H10W72/5366; H10W72/851; H10W72/874; H10W72/884; H10W72/90; H10W72/951; H10W72/952; H10W74/00; H10W90/00; H10W90/701; H10W90/751; H10W90/754
Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
78 words
A semiconductor power device package, characterized in that it comprises: a strip of film dielectric material (1) having at least two separated, metalized areas (6, 7., 8) on a surface thereof; a thermal expansion matching material (9) mounted to a first of said metalized areas; a power semiconductor device (10) mounted to said thermal expansion matching material; and a beam lead (11, 12) electrically connecting a portion of said semiconductor device to a second of said metalized areas.
Claim 2
Dependent Claim
78 words
A semiconductor power device package, characterized in that it comprises: a strip of film dielectric material (1) having at least two separated, metalized areas (6, 7., 8) on a surface thereof; a thermal expansion matching material (9) mounted to a first of said metalized areas; a power semiconductor device (10) mounted to said thermal expansion matching material; and a beam lead (11, 12) electrically connecting a portion of said semiconductor device to a second of said metalized areas.
Claim 3
Dependent Claim
25 words
The semiconductor power device package of Claim 1, further comprising a hole in said strip of film dielectric material underlying each of said metalized areas.
Claim 4
Dependent Claim
20 words
The semiconductor power device package of Claim 1 or 2, wherein said metalized areas comprise a substantially thin copper layer.
Claim 5
Dependent Claim
19 words
The semiconductor power device package according to any one of Claims 1 to 3, wherein said film comprises polyimide.
Claim 6
Dependent Claim
29 words
The semiconductor power device package according to any one of Claim 1 to 4, wherein exposed surfaces of said metalized areas are at least partially covered with gold flashing.
Claim 7
Dependent Claim
24 words
The semiconductor power device package according to anyone of Claim 1 to 5, wherein said thermal expansion matching material comprises a sandwich of Copper-Molybdenum-Copper.
Claim 8
Dependent Claim
37 words
The semiconductor power device package according to any one of Claim 1 to 5, wherein said thermal expansion matching material comprises a core of a steel alloy containing approximately 36% nickel, said core being clad with copper.
Claim 9
Dependent Claim
32 words
The semiconductor power device package according to anyone of Claims 1 to 7 further comprising a substantially low expansion plastic passivation material deposited to substantially enclose at least said power semiconductor device.
Claim 10
Dependent Claim
16 words
The semiconductor power device package of Claim 8, wherein said plastic passivation material comprises polymeric encapsulants.
Claim 11
Dependent Claim
22 words
The semiconductor power device package of Claim 9, wherein said polymeric encapsulant comprises a substantially high purity epoxy with a silica filler.
Claim 12
Dependent Claim
136 words
A semiconductor power device package, characterized in that it comprises: a first strip of film dielectric material-having at least two separated, metalized areas on a first surface thereof, said dielectric material including a hole underlying each of said metalized areas; a thermal expansion matching material mounted to a first of said metalized areas; a beam lead connecting a portion of said semiconductor device to a second of said metalized areas; a second film dielectric material having at least two metalized areas of a first surface thereof; a heat sink material attached to a.second surface of said second dielectric material; and said metalized areas of said first strip being electrically, mechanically and thermally connected to said metalized areas of said second film dielectric material through said hole underlying each of said metalized areas of said first strip.
Claim 13
Dependent Claim
136 words
A semiconductor power device package, characterized in that it comprises: a first strip of film dielectric material-having at least two separated, metalized areas on a first surface thereof, said dielectric material including a hole underlying each of said metalized areas; a thermal expansion matching material mounted to a first of said metalized areas; a beam lead connecting a portion of said semiconductor device to a second of said metalized areas; a second film dielectric material having at least two metalized areas of a first surface thereof; a heat sink material attached to a.second surface of said second dielectric material; and said metalized areas of said first strip being electrically, mechanically and thermally connected to said metalized areas of said second film dielectric material through said hole underlying each of said metalized areas of said first strip.
Claim 14
Dependent Claim
16 words
The power semiconductor device package of Claim 11 wherein said second film dielectric material comprises polyimide.
Claim 15
Dependent Claim
14 words
The power semiconductor device package of Claim 12 wherein said heat sink comprises aluminum.
References Cited (Backward Citations)
No citation records indexed.
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