EP0169567A2
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Semiconductor laser device
Assignee: NEC Corp
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Filing: 1985-07-25
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Granted: —
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Expires: 2005-07-25
Abstract
Abstract The semiconductor laser device consists of a laser region (2) provided with a stratified structure having an active layer (13) and a diffraction grating (1) provided in the vicinity of said active layer (13), and a tuning region (3) having an optical waveguide layer optically coupled to aid laser region (2). The light emitting end facet on said tuning region (3) constitutes a high reflectivity structure having a light reflectivity of 50 % or above. The semiconductor laser permits continuous wavelength tuning.
Inventors
- 👤 Masayuki Yamaguchi
- 👤 Ikuo Mito
- 👤 Mitsuhiro Kitamura
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-27 18:06
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/10; H01S5/12; H01S5/02; H01S5/026; H01S5/0262; H01S5/0264; H01S5/06; H01S5/062; H01S5/0625; H01S5/06255; H01S5/06258; H01S5/028; H01S5/1203; H01S5/20; H01S5/22; H01S5/227; H01S5/2275; H01S5/2277; H01S5/30; H01S5/32; H01S5/323; H01S5/3235; H01S5/32391
Claims Analysis
Total Claims: 3
Claim 1
Independent Claim
100 words
A semiconductor laser device comprising: a laser region including a semiconductor substrate, an active layer formed over said semiconductor substrate for emitting radiation when excited, and a diffraction grating provided over or under said active layer for coupling the radiation; a tuning region including an optical waveguide layer optically coupled to said laser region for waveguiding and constituting a part of the laser oscillation light path, and means for injecting an electric current into said optical waveguide layer; and reflective means formed on a vertical end facet of said optical waveguide layer for providing a reflectivity of 50% or above.
Claim 2
Dependent Claim
100 words
A semiconductor laser device comprising: a laser region including a semiconductor substrate, an active layer formed over said semiconductor substrate for emitting radiation when excited, and a diffraction grating provided over or under said active layer for coupling the radiation; a tuning region including an optical waveguide layer optically coupled to said laser region for waveguiding and constituting a part of the laser oscillation light path, and means for injecting an electric current into said optical waveguide layer; and reflective means formed on a vertical end facet of said optical waveguide layer for providing a reflectivity of 50% or above.
Claim 3
Dependent Claim
64 words
A semiconductor laser device, as claimed in Claim 1, wherein a first optical waveguide for optically coupling a photodiode to the end part of the laser region of said semiconductor laser device opposite to said tuning region, and a second optical waveguide coupled to said first optical waveguide, whose other end constitutes the optical input signal end, are monolithically integrated together over said substrate.
References Cited (Backward Citations)
No citation records indexed.
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