EP0167391A2
Expired / Lapsed
EP
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Method of manufacturing semiconductor devices
Assignee: Sharp Corp
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Filing: 1985-07-02
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Granted: —
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Expires: 2005-07-02
Abstract
Abstract The preferred embodiment discloses a new method of manufacturing semiconductor devices, in which monocrystalline thin film is formed by dissolving and recrystallizing either amorphous or polycrystalline thin film (6) via annealing means by radiation of energy beams (9), wherein the manufacturing method comprises: the formation of a belt-shaped high melting point metal film (8) having a width narrower than the diameter of the energy beams on either amorphous or polycrystalline thin film; beam scanning in parallel with the said belt by means of radiating energy beams onto the said belt-shaped high melting point metal film; and generation of a nucleus in a limited area beneath the belt-shaped thin film at the moment the film-covered amorphous or polycrystalline area dissolves and recrystallizes so that the said recrystallized area can eventually grow into a moncrystalline configuration.
Inventors
- 👤 Seizo Kakimoto
- 👤 Jun Kudo
- 👤 Masayoshi Koba
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-24 08:53
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/20; H10P14/32; H10P14/3202; H10P14/3238; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2905; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P14/3451; H10P14/3452; H10P14/3458; H10P14/38; H10P14/3802; H10P14/3818; H10P14/382; H10P95/00; H10P95/90; Y; Y10; Y10S; Y10S117/00; Y10S117/905; Y10S148/00; Y10S148/093
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
123 words
A method of manufacturing semiconductor devices, in which monocrystalline thin film is formed by dissolving and recrystallizing either amorphous or polycrystalline thin film via annealing means by radiation of energy beams wherein the manufacturing method comprises the following steps: forming belt-shaped high melting point metal film having a width narrower than the diameter of energy beams on either amorphous or polycrystalline thin film; beam scanning in parallel with the said belt by means of radiating energy beams onto the said belt-shaped high-melting point metal film; and generation of a nucleus in a limited area beneath the belt-shaped thin film at the moment the film-covered amorphous or polycrystalline area dissolves and recrystallizes so that said recrystallized area can eventually grow into a monocrystalline configuration.
Claim 2
Independent Claim
123 words
A method of manufacturing semiconductor devices, in which monocrystalline thin film is formed by dissolving and recrystallizing either amorphous or polycrystalline thin film via annealing means by radiation of energy beams wherein the manufacturing method comprises the following steps: forming belt-shaped high melting point metal film having a width narrower than the diameter of energy beams on either amorphous or polycrystalline thin film; beam scanning in parallel with the said belt by means of radiating energy beams onto the said belt-shaped high-melting point metal film; and generation of a nucleus in a limited area beneath the belt-shaped thin film at the moment the film-covered amorphous or polycrystalline area dissolves and recrystallizes so that said recrystallized area can eventually grow into a monocrystalline configuration.
Claim 3
Dependent Claim
70 words
A method of manufacturing semiconductor devices defined in claim 1 comprising the following steps: the application of triangular-waveform AC voltage perpendicular to the scanning direction of either the spotty electron beams (i.e. energy beams) having gauss energy distribution or the said spotty electron beams, thus allowing the AC voltage to perform deflective scanning of energy beams at extremely high speed so that pseudo-linear - electron beams can be made available.
Claim 4
Dependent Claim
74 words
A method of manufacturing semiconductor devices as defined in claim 2 wherein either the spotty electron beams or the pseudo-linear electron beams comprise; approx. 5 to 10 KV of acceleration voltage; spotty electron beams each having approx. 100 to 200 micron meters of diameter; and deflection of the said spotty electron beams respectively ranging from approx. 300 to a maximum of approx. 600 micron meters of width when making up the pseudo-linear electron beams.
Claim 5
Independent Claim
87 words
A method of manufacturing semiconductor devices as defined in claims 1, 2, and 3, wherein the condition of the said belt-shaped high-melting point metal film comprises; approximately 10 to 20 micron meters of width when the said metal film is annealed by means of spotty electron beams; and the said metal film patterned into a line-and-space format when being annealed by means of psuedo-linear electron beams, while the line-and-space pattern comprises about 10 to 20 micron meters of lines and about 5 micron meters of space, respectively.
Claim 6
Independent Claim
105 words
A method of producing a thin film of monocrystalline material by heating and then crystallising an amorphous or polycrystalline thin film of material, comprising the steps of disposing on the film of amorphous or polycrystalline material a film of barrier material which resists the transmission of energy therethrough, so that the barrier material partly covers the amorphous or polycrystalline material, exposing the barrier film and the surrounding amorphous or polycrystalline film to radiated energy to heat the amorphous or polycrystalline material, permitting a portion of the material covered by the barrier film to crystallise, and permitting growth of a monocrystalline structure from the crystallised portion.
Claim 7
Independent Claim
105 words
A method of producing a thin film of monocrystalline material by heating and then crystallising an amorphous or polycrystalline thin film of material, comprising the steps of disposing on the film of amorphous or polycrystalline material a film of barrier material which resists the transmission of energy therethrough, so that the barrier material partly covers the amorphous or polycrystalline material, exposing the barrier film and the surrounding amorphous or polycrystalline film to radiated energy to heat the amorphous or polycrystalline material, permitting a portion of the material covered by the barrier film to crystallise, and permitting growth of a monocrystalline structure from the crystallised portion.
Claim 8
Independent Claim
63 words
A method of producing a film of monocrystalline material from an amorphous or polycrystalline film of material, comprising the steps of heating the amorphous or polycrystalline film in such a way that a depression is formed in the temperature profile of the film, permitting formation of a crystal at the location of the temperature depression, and permitting growth of a monocrystalline structure therefrom.
Claim 9
Independent Claim
63 words
A method of producing a film of monocrystalline material from an amorphous or polycrystalline film of material, comprising the steps of heating the amorphous or polycrystalline film in such a way that a depression is formed in the temperature profile of the film, permitting formation of a crystal at the location of the temperature depression, and permitting growth of a monocrystalline structure therefrom.
References Cited (Backward Citations)
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