EP0165766A1
Expired / Lapsed
EP
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Integrated circuit filter
Assignee: AMI SPINCO INC., A DELAWARE CORPORATION;AMERICAN M
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Filing: 1985-06-12
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Granted: —
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Expires: 2005-06-12
Abstract
Abstract The values of the resistors and capacitors selected for use in a filter constructed in accordance with this invention are such that the high resistivity resistors require a small amount of space, and are physically located beneath the capacitors (33), (34), (35) used in the filter of this invention. The lower plate (33) of the capacitor is connected to a fixed voltage potential, thereby in effect shielding the underlying resistors from the deleterious effect of changes in voltage, and thus preventing the modulation of the resistance values of the resistors.
Inventors
- 👤 Yusuf A. Haque
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-08 19:08
CPC Classifications
H; H03; H03H; H03H11/00; H03H11/02; H03H11/04; H03H11/0405; H10; H10D; H10D84/00; H10D84/201; H10D84/204; H10D84/206; H10D88/00
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
59 words
A semiconductor structure (30;40) including a substrate (31; 41) of a first conductivity type, a resistor (36, 37; 46, 47) formed within the substrate, the resistor being lightly doped to a second conductivity type opposite to the first conductivity type and the structure being characterized by a first conductive plate (33; 43) formed above and insulated from the resistor.
Claim 2
Dependent Claim
59 words
A semiconductor structure (30;40) including a substrate (31; 41) of a first conductivity type, a resistor (36, 37; 46, 47) formed within the substrate, the resistor being lightly doped to a second conductivity type opposite to the first conductivity type and the structure being characterized by a first conductive plate (33; 43) formed above and insulated from the resistor.
Claim 3
Dependent Claim
33 words
A structure as claimed in claim 1, characterized by a second conductive plate (35; 45) formed above and insulated from the first conductive plate, the first and second conductive plates forming a capacitor.
Claim 4
Dependent Claim
26 words
A structure as claimed in claim 2, characterized in that the first conductive plate (43) : has a larger area than said second conductive plate (45).
Claim 5
Independent Claim
81 words
A method for forming a semiconductor structure (30; 40), including the steps of forming within a semiconductor substrate (31; 41) of a first conductivity type a resistor (36, 37; 46; 47) being lightly doped to a second conductivity type opposite to the first conductivity type and forming a first insulation layer (32; 42) over the semiconductor substrate, the method being characterized by including the step of forming a first conductive plate (33; 43) on the first insulation layer above the resistor.
Claim 6
Independent Claim
81 words
A method for forming a semiconductor structure (30; 40), including the steps of forming within a semiconductor substrate (31; 41) of a first conductivity type a resistor (36, 37; 46; 47) being lightly doped to a second conductivity type opposite to the first conductivity type and forming a first insulation layer (32; 42) over the semiconductor substrate, the method being characterized by including the step of forming a first conductive plate (33; 43) on the first insulation layer above the resistor.
Claim 7
Dependent Claim
38 words
A method as claimed in claim 4, characterizea by including the steps of forming a second insulation layer (34; 44) on the first conductive plate and forming a second conductive plate (35; 45) on the second insulation layer.
Claim 8
Dependent Claim
29 words
A method as claimed in claim 5, further characterized in that the second conductive plate (45) is formed to have a lesser area than the first conductive plate (43).
Claim 9
Dependent Claim
42 words
An integrated circuit filter in a semiconductor body including an operation amplifier, a capacitor, and a resistor, the filter being characterized in that the resistor is formed as a lightly doped region (36, 37; 46, 47) within the semiconductor body (31; 41).
Claim 10
Dependent Claim
42 words
An integrated circuit filter in a semiconductor body including an operation amplifier, a capacitor, and a resistor, the filter being characterized in that the resistor is formed as a lightly doped region (36, 37; 46, 47) within the semiconductor body (31; 41).
Claim 11
Dependent Claim
24 words
A filter as claimed in claim 7, characterized in that a first conductive plate (33; 43) is formed above and insulated from the resistor.
Claim 12
Dependent Claim
37 words
A filter as claimed in claim 8, characterized in that a second conductive plate (35; 45) is formed above and insulated from the first conductive plate (33; 43), the first and second conductive plates forming the capacitor.
Claim 13
Dependent Claim
28 words
A filter as claimed in claim 9, characterized in that the first conductive plate (43) has an area greater than the area of the second conductive plate (45).
Claim 14
Dependent Claim
52 words
An electric circuit including a semiconductor structure (30; 40) as claimed in any one of claims 1 to 3 or an integrated circuit filter as claimed in any one of claims 8 to 10, characterized in that the first conductive plate (33; 43) is connected to a source of substantially constant voltage.
References Cited (Backward Citations)
EP0014310A1
Cited
GB2077496A
Cited
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