EP0165538A2
Expired / Lapsed
EP
⏱️ 0.0 years remaining
A resistor for a group III-V intermetallic compound semiconductor integrated circuit
Assignee: International Business Machines Corp
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Filing: 1985-06-11
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Granted: —
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Expires: 2005-06-11
Abstract
Abstract A resistor (6) formed in a Group III-V intermetallic compound semiconductor integrated circuit (1, 2, 3) is comprised by a region of doped Group IV semiconductor material, eg silicon or germanium doped with tin. The resistor region can be formed by co-depositing a Group IV semiconductor material and a resistivity controlling dopant or a region of the Group IV semiconductor material may be implanted or diffused with the dopant.
Inventors
- 👤 Harold John Hovel
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-30 01:07
CPC Classifications
H; H10; H10D; H10D1/00; H10D1/40; H10D1/47
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
31 words
A resistor (6) formed in a Group III-V intermetallic compound semiconductor integrated circuit (1, 2, 3), characterised by the resistor being comprised by a region of doped Group IV semiconductor material.
Claim 2
Dependent Claim
31 words
A resistor (6) formed in a Group III-V intermetallic compound semiconductor integrated circuit (1, 2, 3), characterised by the resistor being comprised by a region of doped Group IV semiconductor material.
Claim 3
Dependent Claim
13 words
A resistor as claimed in claim 1, which is comprised of doped germanium.
Claim 4
Dependent Claim
24 words
A resistor as claimed in claim 2, which is formed in a GaAs integrated circuit and in which the germanium is doped with tin.
Claim 5
Dependent Claim
16 words
A resistor as claimed in claim 3, formed by co-depositing tin and germanium on the GaAs.
Claim 6
Dependent Claim
13 words
A resistor as claimed in claim 1, which is comprised of doped silicon.
Claim 7
Dependent Claim
24 words
A resistor as claimed in claim 5, which is formed in a GaAs integrated circuit and in which the silicon is doped with tin.
Claim 8
Dependent Claim
30 words
A register as claimed in any of claims 1, 2 and 5, in which the Group IV semiconductor material is doped with Sn, As, B, P, In, Ga, or AI.
Claim 9
Dependent Claim
28 words
A resistor as claimed in any of claims 1, 2, 5 and 7, in which the Group IV semiconductor material is doped by the technique of ion implantation.
Claim 10
Dependent Claim
27 words
A resistor as claimed in any of claims 1, 2, 5 and 7, in which the Group IV semiconductor material is doped by the technique of diffusion.
References Cited (Backward Citations)
No citation records indexed.
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