Patent US1389929A successfully refreshed from Google Patents.
EP0164928A2
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Vertical hot wall CVD reactor
Assignee: Texas Instruments Inc
•
Filing: 1985-05-17
•
Granted: —
•
Expires: 2005-05-17
Abstract
Abstract This invention relates to a method and apparatus for chemical vapor deposition of then film material layers onto a substrate. The method and apparatus can be used for epitaxially depositing silicon, for example, in the fabrication of semiconductor electronic devices. The apparatus has a multiple-substrate reactor (12), each having substrate carrier supports (14), which are rotated; and wherein the reaction gases are passed separately via interior manifolds (15, 16) into contact with each substrate carried and rotated by the supports (14). The heat source (11) is an electrical resistance-heated furnace element (11) surrounding the'process chamber (12, 13), producing a "hot wall" condition, heretofore considered unacceptable for epitaxial silicon growth.
Inventors
- 👤 Robert G. Massey
- 👤 Donald W. Heidt
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-26 11:01
CPC Classifications
C; C30; C30B; C30B25/00; C30B25/02; C30B25/08; C23; C23C; C23C16/00; C23C16/44; C23C16/458; C23C16/4582; C23C16/4583; C23C16/4584; C30B25/10; C30B25/12
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
76 words
A vertical hot-wall reactor for the chemical vapor deposition of thin film material layers on a substrate, comprisinq a resistance-heated furnace element surrounding a process tube, qas-inlet means and gas exhaust means within said tube, and a rotatable substrate carrier within said tube, located between the inlet means and the exhaust means, including means for supporting a plurality of substrates such that the center of each substrate lies on the axis of rotation of said carrier.
Claim 2
Dependent Claim
76 words
A vertical hot-wall reactor for the chemical vapor deposition of thin film material layers on a substrate, comprisinq a resistance-heated furnace element surrounding a process tube, qas-inlet means and gas exhaust means within said tube, and a rotatable substrate carrier within said tube, located between the inlet means and the exhaust means, including means for supporting a plurality of substrates such that the center of each substrate lies on the axis of rotation of said carrier.
Claim 3
Dependent Claim
17 words
A reactor'as in claim 1 wherein substantially all interior surfaces and parts are made of silicon carbide.
Claim 4
Dependent Claim
46 words
A reactor as in claim 1 wherein the qas inlet means comprises a plurality of manifolds near said carrier, each of which is provided with a plurality of orifices, spaced apart so that each substrate on the carrier is provided with a separate gas input flow.
Claim 5
Dependent Claim
43 words
A reactor as in claim 1 wherein the gas exhaust means comprises a plurality of manifolds near said carrier, each of which is provided with a plurality of orifices, spaced apart so that gases are removed separately from each substrate on the carrier.
Claim 6
Independent Claim
83 words
A method for the chemical vapor deposition of a thin film on a substrate, comprising the steps of locating the substrate on a rotatable support within a sealed chamber, surrounding the support in part with a plurality of gas inlets and in part with a plurality of exhaust ports spaced remotely from said inlets, rotatina said support while passing reaction gases via said inlets in contact with the substrate, at reaction conditions, and heating said slice by a heat source surrounding said chamber.
Claim 7
Independent Claim
83 words
A method for the chemical vapor deposition of a thin film on a substrate, comprising the steps of locating the substrate on a rotatable support within a sealed chamber, surrounding the support in part with a plurality of gas inlets and in part with a plurality of exhaust ports spaced remotely from said inlets, rotatina said support while passing reaction gases via said inlets in contact with the substrate, at reaction conditions, and heating said slice by a heat source surrounding said chamber.
Claim 8
Dependent Claim
21 words
A method as in claim 5 wherein the substrate is monocrystalline silicon, and the reaction gases comprise hydrogen and a halosilane.
Claim 9
Dependent Claim
16 words
A method as in claim 5 wherein said heat source is an electrical resistance-heated furnace element.
Claim 10
Dependent Claim
28 words
A method as in claim 5 wherein a plurality of substrates is placed on a like plurality of rotatable support members, each havinq a common axis of rotation.
Claim 11
Dependent Claim
33 words
A method as in claim 6 wherein the hydrogen is passed through a separate inlet manifold from said halosilane, so that mixing of the two gases is delayed until they contact the substrates.
Claim 12
Dependent Claim
31 words
A method as in claim 5 wherein the chamber walls and parts therein are made of a material that adheres well to spurious deposits formed thereon, so as to prevent flaking.
References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
Maintenance schedule is calculated for granted US utility patents.