EP0162668A2
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Semiconductor laser
Assignee: Sharp Corp
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Filing: 1985-05-16
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Granted: —
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Expires: 2005-05-16
Abstract
Abstract A semiconductor laser includes a front mirror facet and a rear mirror facet. An A1 2 O 3 film coating is formed on the front mirror facet by the electron beam evaporation technique so that the front mirror facet has the reflectance between 10 and 20%. A multi-layered coating is formed on the rear mirror facet so that the rear mirror facet has the reflectance higher than 90%.
Inventors
- 👤 Nobuyuki Miyauchi
- 👤 Shigeki Maei
- 👤 Osamu Yamamoto
- 👤 Taiji Morimoto
- 👤 Hiroshi Hayashi
- 👤 Saburo Yamamoto
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-06 15:25
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/02; H01S5/028; H01S5/20; H01S5/22; H01S5/223; H01S5/2232; H01S5/2237
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
70 words
A semiconductor laser comprising: a semiconductor substrate; and an active layer sandwiched by a pair of cladding layers, said semiconductor laser including a front and rear facets, said semiconductor laser further comprising: a coating formed on said front facet so that said front facet has the reflectance between 10 and 20%; and another coating formed on said rear facet so that said rear facet has the reflectance greater than 90%.
Claim 2
Dependent Claim
70 words
A semiconductor laser comprising: a semiconductor substrate; and an active layer sandwiched by a pair of cladding layers, said semiconductor laser including a front and rear facets, said semiconductor laser further comprising: a coating formed on said front facet so that said front facet has the reflectance between 10 and 20%; and another coating formed on said rear facet so that said rear facet has the reflectance greater than 90%.
Claim 3
Dependent Claim
41 words
The semiconductor laser of claim 1, further comprising a current blocking layer disposed between said semiconductor substrate and one of said pair of cladding layers, wherein an inner stripe is formed in said current blocking layer to form a current path.
Claim 4
Dependent Claim
21 words
The semiconductor laser of claim 2, wherein said coating formed on said front facet comprises an A1 2 0 3 film.
Claim 5
Dependent Claim
33 words
A semiconductor laser having front and rear reflecting faces, the reflectance of the rear face being greater than 90%, characterised in that the reflectance of the front face is between 10% and 20%.
Claim 6
Dependent Claim
33 words
A semiconductor laser having front and rear reflecting faces, the reflectance of the rear face being greater than 90%, characterised in that the reflectance of the front face is between 10% and 20%.
Claim 7
Dependent Claim
33 words
A semiconductor laser according to claim 4 in which said front face has a coating which is about λ/3 thick, where λ is the wavelength of the laser light emitted by the laser.
References Cited (Backward Citations)
No citation records indexed.
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