EP0162529B1
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Amorphous or microcrystalline semiconductor memory device
Assignee: BP PLC
•
Filing: 1985-01-03
•
Granted: 1989-03-01
•
Expires: 2005-01-03
Abstract
No abstract record available.
Inventors
- 👤 Peter John Hockley
- 👤 Michael John Thwaites
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-30 07:11
CPC Classifications
H; H10; H10D; H10D48/00; H10D48/30; H10D48/38; H10D48/381; H10D8/00; H10D8/50; H10P; H10P14/00; H10P14/20; H10P14/29; H10P14/2901; H10P14/2922; H10P14/2923; H10P14/32; H10P14/3202; H10P14/3204; H10P14/3211; H10P14/3242; H10P14/3244; H10P14/3251; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
62 words
A semiconductor structure suitable for making an electrically programmable non-volatile memory device by applying a forming voltage, said structure comprising an electrically conducting substrate, at least two layers of different conductivity types selected from i, p, and n-type amorphous or microcrystalline semiconducting material and an additional d-type layer of amorphous or microcrystalline semiconducting material located between two of the said different layers.
Claim 2
Dependent Claim
62 words
A semiconductor structure suitable for making an electrically programmable non-volatile memory device by applying a forming voltage, said structure comprising an electrically conducting substrate, at least two layers of different conductivity types selected from i, p, and n-type amorphous or microcrystalline semiconducting material and an additional d-type layer of amorphous or microcrystalline semiconducting material located between two of the said different layers.
Claim 3
Dependent Claim
21 words
A structure according to claim 1 wherein the semiconductor material consists essentially of elements of Groups IV of the Periodic Table.
Claim 4
Dependent Claim
12 words
A structure according to claim 2 wherein the semiconductor material is silicon.
Claim 5
Dependent Claim
22 words
A structure according to any one of the preceding claims wherein the d-layer has an average thickness of 0.5 to 1.2 nm.
Claim 6
Dependent Claim
30 words
A structure according to any one of the preceding claims wherein the total thickness of said semiconductor material across which the forming voltage is applied is less than 500 nm.
Claim 7
Dependent Claim
26 words
A structure according to claim 5 wherein the total thickness of said semiconductor material across which the forming voltage is applied is less than 200 nm.
Claim 8
Dependent Claim
53 words
A structure according to any one of the preceding claims wherein the d-layer is formed from material which, when present as a layer of average thickness not greater than 1.2 nm, gives a device with forming voltage not more than 60% of the forming voltage of an otherwise identical device without the d-layer.
Claim 9
Dependent Claim
31 words
A structure according to any one of the preceding claims wherein the d-layer is made by depositing amorphous silicon using a glow discharge at a substrate temperature of less than 150°C.
Claim 10
Dependent Claim
23 words
A memory device made by subjecting a structure according to any one of the preceding claims to a forming voltage below 15 volts.
Claim 11
Dependent Claim
16 words
. A memory device according to claim 9 wherein the forming voltage is below 10 volts.
References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
Maintenance schedule is calculated for granted US utility patents.