EP0159408A2
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Method of manufacturing a semiconductor device comprising resistors
Assignee: Toshiba Corp
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Filing: 1984-12-20
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Granted: —
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Expires: 2004-12-20
Abstract
Abstract There is disclosed a method of manufacturing a semiconductor device comprising the steps of forming a polysilicon film (13) on a semiconductor substrate (11) through an oxidation film (12), forming a mask (14) of a predetermined pattern on the polysilicon film, forming a molybdenum film (17) on the polysilicon film and silicifying those regions (18 1 , 18.) of said molybdenum film (17) not covered by the mask so that a structure of the uncovered molybdenum film regions (18 1 , 18 2 ) and those regions (15 1 , 15 2 ) of the polysilicon film located under the uncovered molybdenum regions have low resistance, while a region (16) of the molybdenum film covered by the mask have high resistance.
Inventors
- 👤 Takeo C/O Patent Division Maeda
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-30 12:22
CPC Classifications
H; H10; H10D; H10D1/00; H10D1/40; H10D1/47; H10D1/474; Y; Y10; Y10S; Y10S148/00; Y10S148/035; Y10S148/105; Y10S148/147
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
130 words
A method of manufacturing a semiconductor device comprising: a step of forming a film (13) of a high resistance containing silicon on a semiconductor substrate (11); a step of forming a mask (14) of a predetermined pattern on said silicon containing film; a step of forming a metal film (17) on said silicon containing film; and a step of silicifying those regions (15 1 , 15 2 ) of said metal film not covered by said mask so that a structure of the uncovered metal regions (18 1 , 18 2 ) and those regions (15 i , 15 2 ) of said silicon containing film located under the uncovered metal regions have low resistance, while a region (16) of said metal film covered by said mask has high resistance.
Claim 2
Independent Claim
130 words
A method of manufacturing a semiconductor device comprising: a step of forming a film (13) of a high resistance containing silicon on a semiconductor substrate (11); a step of forming a mask (14) of a predetermined pattern on said silicon containing film; a step of forming a metal film (17) on said silicon containing film; and a step of silicifying those regions (15 1 , 15 2 ) of said metal film not covered by said mask so that a structure of the uncovered metal regions (18 1 , 18 2 ) and those regions (15 i , 15 2 ) of said silicon containing film located under the uncovered metal regions have low resistance, while a region (16) of said metal film covered by said mask has high resistance.
Claim 3
Dependent Claim
21 words
A manufacturing method according to claim 1, characterized in that said silicon containing film (13) is formed directly on said substrate.
Claim 4
Dependent Claim
29 words
A manufacturing method according to claim 1, characterized in that said silicon containing film (13) is formed over said substrate through an insulation film (12) formed on said substrate.
Claim 5
Dependent Claim
26 words
A manufacturing method according to claim 1, further comprising, following said mask forming step, a step of implanting an impurity ion into said silicon containing film.
Claim 6
Dependent Claim
31 words
A manufacturing method according to claim 1, further comprising, following said metal film forming step, a step of implanting an impurity ion into said silicon containing film through said metal film.
Claim 7
Dependent Claim
29 words
A manufacturing method according to claim 1, further comprising, following said silicifying step, a step of implanting an impurity ion into said silicon containing film through said metal film.
Claim 8
Dependent Claim
27 words
A manufacturing method according to claim 1, further comprising, following said mask forming step, a step of thermally diffusing an impurity ion into said silicon containing film.
Claim 9
Dependent Claim
31 words
A manufacturing method according to claim 1, further-comprising, following said metal film forming step, a step of thermally diffusing an impurity ion into said silicon containing film through said metal film.
Claim 10
Dependent Claim
30 words
A manufacturing method according to claim 1, further comprising, following said silicifying step, a step of thermally diffusing an impurity ion into said silicon containing film through said metal film.
Claim 11
Dependent Claim
19 words
A manufacturing method according to claim 1, characterized in that said silicon containing film (13) is a polysilicon film.
Claim 12
Dependent Claim
20 words
A manufacturing method according to claim 1, characterized in that said silicon containing film (13) is an amorphous silicon film.
Claim 13
Dependent Claim
21 words
A manufacturing method according to claim 1, characterized in that said silicon containing film (13) is a single crystal silicon film.
Claim 14
Dependent Claim
29 words
A manufacturing method according to claim 1, characterized in that said metal film (17) is made of one selected from molybdenum, titanium, tantalum, tungsten, platinum, palladium, cobalt and aluminum.
References Cited (Backward Citations)
No citation records indexed.
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