EP0158357A2
Expired / Lapsed
EP
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Method of forming resist micropattern
Assignee: NTT Inc
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Filing: 1985-04-11
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Granted: —
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Expires: 2005-04-11
Abstract
Abstract A resist pattern (17) is formed on a substrate (11) by forming a resist (12) on a substrate and radiating an energy beam carrying predetermmed pattern information onto the resist (12), thereby forming a recessed pattern (13) in a surface portion of the resist (12) so as not to extend through the resist (12). A flat mask layer (14) is formed on the resist (12) including the recessed pattern (13). The mask layer (15) is uniformly etched along a direction of thickness thereof until at least a surface of the resist (12) is exposed to allow the mask layer (14) to remain on at least a bottom of the recessed pattern (13), thereby forming a mask pattern (16) comprising the remaining residual mask layer. Finally, the resist (12) is etched by using the mask pattern (16) as an etching mask.
Inventors
- 👤 Tadahito Matsuda
- 👤 Katsuhiro Harada
- 👤 Shigeru Moriya
- 👤 Tetsuyoshi Ishii
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-01 20:59
CPC Classifications
G; G03; G03F; G03F7/00; G03F7/26; G03F7/40; G03F7/0035; Y; Y10; Y10S; Y10S430/00; Y10S430/143; Y10S430/167; Y10S430/168
Claims Analysis
Total Claims: 20
Claim 1
Independent Claim
155 words
A method of forming a resist pattern (17) on a substrate, comprising the steps of: (a) forming a resist (12, 12', 12") on a substrate (11); (b) radiating an energy beam (EB) carrying predetermined pattern information onto said resist (12, 12', 12"), thereby forming a recessed pattern (13) in a surface portion of the resist (12, 12') so as not to extend through said resist; (c) forming a flat mask layer (14) on said resist (12, 12') including said recessed pattern (13); (d) uniformly etching said mask layer (14) along a direction of thickness thereof until at least a surface of said resist (12, 12') is exposed to allow said mask layer (14) to remain on at least a bottom of sa-id recessed pattern (13), thereby forming a mask pattern (16, 16') comprising the remaining residual mask layer; and (e) etching said resist (12, 12') by using said mask pattern (16) as an etching mask.
Claim 2
Independent Claim
155 words
A method of forming a resist pattern (17) on a substrate, comprising the steps of: (a) forming a resist (12, 12', 12") on a substrate (11); (b) radiating an energy beam (EB) carrying predetermined pattern information onto said resist (12, 12', 12"), thereby forming a recessed pattern (13) in a surface portion of the resist (12, 12') so as not to extend through said resist; (c) forming a flat mask layer (14) on said resist (12, 12') including said recessed pattern (13); (d) uniformly etching said mask layer (14) along a direction of thickness thereof until at least a surface of said resist (12, 12') is exposed to allow said mask layer (14) to remain on at least a bottom of sa-id recessed pattern (13), thereby forming a mask pattern (16, 16') comprising the remaining residual mask layer; and (e) etching said resist (12, 12') by using said mask pattern (16) as an etching mask.
Claim 3
Dependent Claim
24 words
A method according to claim 1, characterized in that said recessed pattern (13) has a recess whose depth is not more than 0.4 µm.
Claim 4
Dependent Claim
22 words
A method according to claim 2, characterized in that said mask layer (14) has a thickness of not less than 2.0 um.
Claim 5
Dependent Claim
18 words
A method according to claim 1, characterized in that said resist (12, 12') comprises a positive resist material.
Claim 6
Dependent Claim
18 words
A method according to claim 1, characterized in that said mask material comprises silicone resin or spin-on glass.
Claim 7
Dependent Claim
21 words
A method according to claim 1, characterized in that said recessed pattern (13) reflects a beam profile of said energy beam.
Claim 8
Dependent Claim
19 words
7 . A method according to claim 6, characterized in that the energy beam (EB) comprises an electron beam.
Claim 9
Dependent Claim
15 words
A method according to claim 6, characterized in that said energy beam (EB) comprises light.
Claim 10
Dependent Claim
15 words
A method according to claim 6, characterized in that said energy beam (EB) comprises X-ray.
Claim 11
Dependent Claim
17 words
A method according to claim 6, characterized in that said energy beam (EB) comprises an ion beam.
Claim 12
Dependent Claim
32 words
A method according to claim 4, characterized in that said resist (12, 12') comprises a homopolymer of a monomer selected from the group consisting of a,a-dimethylbenzylmethacrylate, a-methylbenzylmethacrylate, diphenylmethacrylate, triphenylmethacrylate, phenylmethacrylate and tert-butylmethacrylate.
Claim 13
Dependent Claim
60 words
A method according to claim 4, characterized in that said resist (12, 12') comprises a copolymer of at least one first monomer selected from the group consisting of a,a-dimethylbenzylmethacrylate, a-methylbenzylmethacrylate, diphenylmethacrylate, triphenylmethacrylate, phenylmethacrylate and tert-butylmethacrylate, and at least one second monomer represented by a general formula wherein R is an alkyl or haloalkyl group having 1 to 5 carbon atoms.
Claim 14
Dependent Claim
18 words
A method according to claim 1, characterized in that said resist (12, 12') is a single layer resist.
Claim 15
Dependent Claim
21 words
A method according to claim 1, characterized in that said resist comprises a multi-layer resist whose uppermost layer constitutes said resist.
Claim 16
Independent Claim
36 words
A method according to any one of claims 1 to 14, chcracterized by further including the step of judging an interface between said mask layer (14) and said resist (12, 12') by detecting a label material.
Claim 17
Dependent Claim
25 words
A method according tc: claim 15, characterized in that said interface is detected based on a change in intensity of a mass or emission spectrum.
Claim 18
Dependent Claim
74 words
A method according to claim 16, characterized in that said judging step includes a step that a label material containing an element other than those constituting a material forming said resist (12') or the mask layer (14) is contained in the material constituting either the resist (12') or the mask layer (14), and the interface is detected in accordance with the change in intensity of the mass or emission spectrum of said label material.
Claim 19
Dependent Claim
58 words
A method according to claim 16, characterized in that said judging step includes forming a label layer (31) of the label material containing an element other than those of said mask layer (14) and said resist (12) between said resist (12) and said mask layer (14), the label material in said label layer (31) being detected during etching.
Claim 20
Dependent Claim
39 words
A method according to claim 18, characterized in that said label layer (31') is sandwiched between resist layers (12, 12") so as to be located at a central portion along a direction of thickness of said recessed pattern (13).
References Cited (Backward Citations)
No citation records indexed.
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