Light quenchable thyristor device

Claim 2

A light quenchable thyristor device comprising a transistor having main electrodes one of which is electrically connected with the gate or high impurity density base of said thyristor, a means of emitting light triggering light pulse to said thyristor and a means of emitting a light quenching light pulse to said transistor, a bias voltage being applied between the other of the main electrodes and cathode of said transistor or the other of the main electrodes and cathode being made electrically common with each other and a bias voltage being applied between the control electrode and cathode of said transistor through a resistance or the control electrode of said transistor being in a floating potential state.

Claim 3

A thyristor device according to Claim 1 wherein said thyristor is a single gate type static induction thyristor.

Claim 4

A thyristor device according to Claim 1 wherein said thyristor is a single base type beam base thyristor.

Claim 5

A thyristor device according to Claim 1 wherein said transistor is a p-channel static induction transistor.

Claim 6

A thyristor device according to Claim 1 wherein said transistor is an n-channel static induction transistor.

Claim 7

A thyristor device according to Claim 1 wherein said transistor is an SIT-mode pnp bipolar transistor.

Claim 8

A light quenchable thyristor device wherein a plurality of light quenchable thyristors according to Claim 1 are connected in series.

Claim 9

A light quenchable thyristor device wherein a plurality of light quenchable thyristors according to Claim 1 are connected in parallel.

Claim 10

A light quenchable thyristor device comprising a single gate type static induction thyristor, an SIT-mode bipolar transistor having main electrodes one of which is electrically connected with the gate or high impurity density base of said thyristor, a means of emitting a light triggering light pulse to said thyristor and a means of emitting a light quenching light pulse to said transistor, a bias voltage being applied between the other of the main electrodes and cathode of said transistor or the other of the main electrodes and cathod being made common with each other, a bias voltage being applied between the control electrode and cathod of said transistor through a resistance or the control electrode of said transistor being in a floating potential state and said thyristor and transistor being integrated within the same semiconductor substrate.

Claim 11

A light quenchable thyristor device comprising a single gate type static induction thyristor, an SIT-mode bipolar transistor having main electrodes one of which is electrically connected with the gate or high impurity density base of said thyristor, a means of emitting a light triggering light pulse to said thyristor and a means of emitting a light quenching light pulse to said transistor, a bias voltage being applied between the other of the main electrodes and cathode of said transistor or the other of the main electrodes and cathod being made common with each other, a bias voltage being applied between the control electrode and cathod of said transistor through a resistance or the control electrode of said transistor being in a floating potential state and said thyristor and transistor being integrated within the same semiconductor substrate.

Claim 12

A light quenchable thyristor comprising a thyristor, a first transistor having main electrodes one or which is electrically connected with the first gate or first high impurity density base of said thyristor, a second transistor having main electrodes one of which is electrically connected with the second gate or second high impurity density base of said thyristor, a menas of emitting a light triggering light pulse to said thyristor and a means of emitting a light quenching light pulse to said first and second transistors, a bias voltage being applied between the other of the main electrodes and cathode of said first transistor or the other of the main electrodes and cathode of said first transistor being made electrically common with each other, a bias voltage being applied between the control electrode and anode of said first trnasistor through a resistance or the control electrode of said first transistor'being in a floating potential state, a bias voltage being applied between the other of the main electrodes and anode of said second transistor or the other of the main electrodes and anode of said second transistor being made electrically common with each other.

Claim 13

A light quenchable thyristor comprising a thyristor, a first transistor having main electrodes one or which is electrically connected with the first gate or first high impurity density base of said thyristor, a second transistor having main electrodes one of which is electrically connected with the second gate or second high impurity density base of said thyristor, a menas of emitting a light triggering light pulse to said thyristor and a means of emitting a light quenching light pulse to said first and second transistors, a bias voltage being applied between the other of the main electrodes and cathode of said first transistor or the other of the main electrodes and cathode of said first transistor being made electrically common with each other, a bias voltage being applied between the control electrode and anode of said first trnasistor through a resistance or the control electrode of said first transistor'being in a floating potential state, a bias voltage being applied between the other of the main electrodes and anode of said second transistor or the other of the main electrodes and anode of said second transistor being made electrically common with each other.

Claim 14

A thyristor device according to Claim 10 wherein said thyristor is a double gate type static induction thyristor.

Claim 15

A thyristor device according to claim 10 wherein said thyristor is a double base type beam base thyristor.

Claim 16

A thyristor device according to Claim 10 wherein said first and second transistors are respectively an SIT-mode pnp bipolar transistor and SIT-mode npn bipolar transistor.

Claim 17

14, A thyristor device accroding to Claim 10 wherein said first and second transistors are respectively p-channel static induction transistor and n-channel static induction transistor.

Claim 18

A thyristor device accroding to Claim 10 wherein either one of said first and second transistors is an n-channel or p-channel static induction transistor and the other is an SIT-mode pnp or npn bipolar trnasistor.

Claim 19

A light quenchable thyristor wherein a plurality of light quenchable thyristors according to Claim 10 are connected in series.

Claim 20

A light quenchable thyristor wherein a plurality of light quenchable thyristors accroding to Claim 10 are connected in parallel.

Claim 21

A light quenchable thyristor comprising a double gate type static induction thyristor or a double base type beam base thyristor, a first transistor having main electrodes one of which is electrically connected with the first gate or first high impurity density base of said thyristor, a second transistor having main electrodes one of which is electrically connected with the second gate or second high impurity density base, a means of emitting a light triggering light pulse to said thyristor and a means of emitting a light quenching light pulse to said first and second transistors, a bias voltage being applied between the other of the main electrodes and cathode of said first transistor or the other of the main electrodes and cathode of said first transistor being made electrically common with each other, a bias voltage being applied between the control electrode and cathode of said first transistor through a resistance or the control electrode of said first transistor being in a floating potential state, a bias voltage being applied between the other of the main electrodes and anode of said second transistor or the other of the main electrodes and anode of said second transistor being made electrically common with each other and said double gate type static induction thyristor or double base type beam base thyristor and said first and second transistors are integrated within the same semiconductor substrate.

Claim 22

A light quenchable thyristor comprising a double gate type static induction thyristor or a double base type beam base thyristor, a first transistor having main electrodes one of which is electrically connected with the first gate or first high impurity density base of said thyristor, a second transistor having main electrodes one of which is electrically connected with the second gate or second high impurity density base, a means of emitting a light triggering light pulse to said thyristor and a means of emitting a light quenching light pulse to said first and second transistors, a bias voltage being applied between the other of the main electrodes and cathode of said first transistor or the other of the main electrodes and cathode of said first transistor being made electrically common with each other, a bias voltage being applied between the control electrode and cathode of said first transistor through a resistance or the control electrode of said first transistor being in a floating potential state, a bias voltage being applied between the other of the main electrodes and anode of said second transistor or the other of the main electrodes and anode of said second transistor being made electrically common with each other and said double gate type static induction thyristor or double base type beam base thyristor and said first and second transistors are integrated within the same semiconductor substrate.

Claim 23

A light quenchable thyristor comprising a thyristor comprising an anode, cathode, first control region and second control region, a first transistor having main electrodes one of which is electrically connected with the high impurity density region of the first control region of said thyristor, a second transistor having main electrodes one of which is electrically connected with the high impurity density region of the second control region of said thyristor, a means of emitting a light triggering light pulse to said thyristor and a means of emitting a light quenching light pulse to said first and second transistors, either one of the first and second control regions of said thyristor having a beam base structure and the other having an SIT gate structure.

Claim 24

A light quenchable thyristor comprising a thyristor comprising an anode, cathode, first control region and second control region, a first transistor having main electrodes one of which is electrically connected with the high impurity density region of the first control region of said thyristor, a second transistor having main electrodes one of which is electrically connected with the high impurity density region of the second control region of said thyristor, a means of emitting a light triggering light pulse to said thyristor and a means of emitting a light quenching light pulse to said first and second transistors, either one of the first and second control regions of said thyristor having a beam base structure and the other having an SIT gate structure.

Claim 25

A thyristor device accroding to Claim 19 wherein said thyristor and said first and second transistor: are integrated within the same semiconductor substrate.