EP0157905A2
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Semiconductor device
Assignee: Toshiba Corp
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Filing: 1984-10-30
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Granted: —
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Expires: 2004-10-30
Abstract
Abstract In a semiconductor device according to the invention, first and second voltage dropping circuits (100. 200) for generating voltages (Vinl, Vin2) respectively having smaller values than that of an external power supply voltage (Vext) are provided. The first voltage dropping circuit (100) which consumes relatively less power is always in an operative mode, and the second voltage dropping circuit (200) which consumes more power than that of the first voltage dropping circuit is operated during an interval other than a standby interval. The voltages (Vin1, Vin2) generated by the first and second voltage dropping circuits (100, 200) are supplied to an internal power supply line (12) in parallel with each other.
Inventors
- 👤 Takayasu C/O Patent Division Sakurai
- 👤 Tetsuya C/O Patent Division Iizuka
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-05 04:48
CPC Classifications
G; G11; G11C; G11C5/00; G11C5/14; G11C5/147
Claims Analysis
Total Claims: 20
Claim 1
Independent Claim
138 words
A semiconductor device which includes an external terminal (11) to which an external power supply voltage (Vext) is applied, and an internal power supply line (12) to which a lower voltage than the external power supply voltage (Vext) is applied, characterized by comprising: first voltage dropping means (100), operative in at least a standby interval, for generating a first voltage (Vinl) having a smaller value than that of the external power supply voltage (Vext) so as to supply the first voltage to said internal power supply line (12); and second voltage dropping means (200), operative in an interval other than the standby interval, for generating a second voltage (Vin2) having a smaller value than that of the external power supply voltage ( V ext) so as to supply the second voltage to said internal power supply line (12).
Claim 2
Dependent Claim
138 words
A semiconductor device which includes an external terminal (11) to which an external power supply voltage (Vext) is applied, and an internal power supply line (12) to which a lower voltage than the external power supply voltage (Vext) is applied, characterized by comprising: first voltage dropping means (100), operative in at least a standby interval, for generating a first voltage (Vinl) having a smaller value than that of the external power supply voltage (Vext) so as to supply the first voltage to said internal power supply line (12); and second voltage dropping means (200), operative in an interval other than the standby interval, for generating a second voltage (Vin2) having a smaller value than that of the external power supply voltage ( V ext) so as to supply the second voltage to said internal power supply line (12).
Claim 3
Dependent Claim
167 words
A semiconductor device which includes an external terminal (11) to which an external power supply voltage (Vext) is supplied, and an internal power supply line (12) to which a lower voltage than the external power supply voltage (Vext) is supplied, characterized by comprising: an internal circuit (30), which has a standby interval for reducing power consumption and is operated using a voltage (Vin) from said internal power supply line (12) as an operating voltage; first voltage dropping means (100), operative in at least the standby interval, for generating a first voltage (Vinl) having a smaller value than that of the external power supply voltage (Vext) so as to supply the first voltage to said internal power supply line (12); and second voltage dropping means (200), operative in an interval other than the standby interval, for generating a second voltage (Vin2) having a smaller value than that of the external power supply voltage (Vext) so as to supply the second voltage to said internal power supply line (12).
Claim 4
Dependent Claim
167 words
A semiconductor device which includes an external terminal (11) to which an external power supply voltage (Vext) is supplied, and an internal power supply line (12) to which a lower voltage than the external power supply voltage (Vext) is supplied, characterized by comprising: an internal circuit (30), which has a standby interval for reducing power consumption and is operated using a voltage (Vin) from said internal power supply line (12) as an operating voltage; first voltage dropping means (100), operative in at least the standby interval, for generating a first voltage (Vinl) having a smaller value than that of the external power supply voltage (Vext) so as to supply the first voltage to said internal power supply line (12); and second voltage dropping means (200), operative in an interval other than the standby interval, for generating a second voltage (Vin2) having a smaller value than that of the external power supply voltage (Vext) so as to supply the second voltage to said internal power supply line (12).
Claim 5
Dependent Claim
23 words
A semiconductor device according to claim 2, characterized in that said first voltage dropping means (100) is operated regardless of the standby interval.
Claim 6
Dependent Claim
35 words
A semiconductor device according to claim 2, characterized in that a current consumption when said first voltage dropping means is in an operative mode is lower than that of said second voltage dropping means (200).
Claim 7
Dependent Claim
36 words
A semiconductor devi.ce according to claim 2, characterized in that said internal circuit (300) is a memory circuit which includes a metal oxide semiconductor transistor having an effective channel length of not more than 1 µm.
Claim 8
Dependent Claim
46 words
A semiconductor device according to claim 2, characterized in that said first voltage dropping means (100) comprises impedance elements (104, 105, 106, 110, 301, 302, 303) respectively having an impedance of at least more than several mega ohms which are respectively inserted in direct current paths.
Claim 9
Dependent Claim
104 words
A semiconductor device according to claim 2, characterized in that said first voltage dropping means (100) comprises: voltage dividing means (101) for dividing the voltage of said internal power supply line (12); voltage amplifying means (102), to which a voltage (Vext) of said external terminal (11) is supplied as an operating voltage, for amplifying a voltage (Vl) which is divided by said voltage dividing means (101); and variable impedance means (103) which is inserted between said external terminal (11) and said internal power supply line (12), and an impedance of which is controlled in accordance with an output from said voltage amplifying means (102).
Claim 10
Dependent Claim
107 words
A semiconductor device according to claim 2, characterized in that said second voltage dropping means (200) comprises: reference voltage generating means (201), operative only in an interval other than the standby interval, for generating a predetermined reference voltage (Vref); voltage comparing means (202), operative only in an interval other than the standby interval, for comparing a voltage (Vin2) of said internal power supply line (12) with the reference voltage (Vref); and variable impedance means (203) which is inserted between said external terminal (11) and said internal power supply line (12) and an impedance of which is controlled in accordance with output from said voltage comparing means (202).
Claim 11
Dependent Claim
41 words
A semiconductor device according to claim 7, characterized in that said voltage dividing means (101) comprises a plurality of impedance elements (104, 105, 301) which respectively have a resistance of several mega ohms and are connected in series with each other.
Claim 12
Dependent Claim
49 words
-10. A semiconductor device according to claim 7, characterized in that said voltage amplifying means (102) includes an inverting circuit (108, 111) which comprises a load element (106, 110, 302, 310) having a resistance of several mega ohms and a metal oxide semiconductor transistor (107, 109) as a driver.
Claim 13
Dependent Claim
36 words
A semiconductor device according to claim 7, characterized in that said variable impedance means (103) comprises a metal oxide semiconductor transistor which has a gate to which an output from said voltage amplifying means is supplied.
Claim 14
Dependent Claim
19 words
A semiconductor device according to claim 9, characterized in that said plurality of impedance elements (104, 105) are resistors.
Claim 15
Dependent Claim
21 words
A semiconductor device according to claim 9, characterized in that said plurality of impedance elements (301) are metal oxide semiconductor transistors.
Claim 16
Dependent Claim
18 words
A semiconductor device according to claim 10, characterised in that said load element (106, 110) is a resistor.
Claim 17
Dependent Claim
21 words
A semiconductor device according to claim 10, characterized in that said load element (106, 110) is a metal oxide semiconductor transistor.
Claim 18
Dependent Claim
65 words
A semiconductor device according to claim 8, characterized in that said reference voltage generating means (201) comprises: switching means which is controlled to switch in accordance with a control signal (CE) which controls the standby interval; and a plurality of metal oxide semiconductor transistors (205), which is connected in series, for generating a constant voltage when a current is supplied through said switching means (204).
Claim 19
Dependent Claim
61 words
A semiconductor device according to claim 8, characterized in that said voltage comparing means (202) comprises a differential amplifier which comprises first and second current paths, and switching means (207, 210), which is controlled to switch in accordance with a control signal (CE) which controls the standby interval, both of which are respectively inserted in said first and second current paths.
Claim 20
Dependent Claim
37 words
A semiconductor device according to claim 8, characterized in that said variable impedance means (203) comprises a metal oxide semiconductor transistor which has a gate to which an output from said voltage comparing means (202) is supplied.
References Cited (Backward Citations)
No citation records indexed.
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