EP0157389A2
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Protection device for a MOS transistor
Assignee: Toshiba Corp
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Filing: 1985-03-29
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Granted: —
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Expires: 2005-03-29
Abstract
Abstract A semiconductor integrated circuit includes a MOS transistor (TR13), and a transistor circuit (TR14, R1 in which one end of a current path is connected to a drain of this MOS transistor (TR13) and which has a breakdown voltage lower than an avalanche breakdown voltage of the MOS transistor (TR13).
Inventors
- 👤 Hiroshi C/O Patent Division Iwahashi
- 👤 Masamichi C/O Patent Division Asano
- 👤 Hiroshi C/O Patent Division Harada
- 👤 Shinichi C/O Patent Division Tanaka
- 👤 Hideki C/O Patent Division Sumihara
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-31 08:42
CPC Classifications
H; H10; H10D; H10D89/00; H10D89/60; H10D89/601; G; G11; G11C; G11C16/00; G11C16/02; G11C16/06; G11C16/10; H10D84/00; H10D84/80; H10D84/82; H10D84/83
Claims Analysis
Total Claims: 17
Claim 1
Independent Claim
58 words
A semiconductor integrated circuit comprising: a first MOS transistor (TR13); and a transistor circuit (TR14, Rl; TR15, Cl, GCD; TR15, TR16, GCD) in which one end of a current path is connected to a drain of said first MOS transistor (TR13) and which has a breakdown voltage lower than a breakdown voltage of the first MOS transistor (TR13).
Claim 2
Dependent Claim
58 words
A semiconductor integrated circuit comprising: a first MOS transistor (TR13); and a transistor circuit (TR14, Rl; TR15, Cl, GCD; TR15, TR16, GCD) in which one end of a current path is connected to a drain of said first MOS transistor (TR13) and which has a breakdown voltage lower than a breakdown voltage of the first MOS transistor (TR13).
Claim 3
Dependent Claim
69 words
A semiconductor integrated circuit according to claim 1, characterized in that said transistor circuit has a transistor device (TR14) in which one end of the current path is connected to the drain of said transistor (TR13); and resistive means (R1) in which one end is connected to the other end of the current path of said transistor device (TR14) and the other end is held at a reference potential.
Claim 4
Dependent Claim
32 words
A semiconductor integrated circuit according to claim 2, characterized in that said transistor device (TRI4) is a second MOS transistor having a gate insulation film thicker than said first MOS transistor (TR13).
Claim 5
Dependent Claim
45 words
A semiconductor integrated circuit according to claim 2, characterized in that said transistor device is a second MOS transistor (TR14) whose drain is connected to the drain of said first MOS transistor (TR13) and whose source and gate are connected to said resistive means (R1).
Claim 6
Dependent Claim
41 words
A semiconductor integrated circuit according to claim 2, characterized in that said transistor device is a bipolar transistor whose collector is connected to the drain of said first MOS transistor (TR13) and whose emitter is connected to said resistive means (Rl).
Claim 7
Dependent Claim
72 words
A semiconductor integrated circuit according to claim 2, characterized in that said transistor device has a substrate (3) of one conductivity type and first and second semiconductor regions (11 and 12) of an opposite conductivity type formed in the surface area of said substrate (3), and said first and second semiconductor regions (11 and 12) are connected to the drain of said first MOS transistor (TR13) and said resistive means (Rl), respectively.
Claim 8
Dependent Claim
64 words
A semiconductor integrated circuit according to claim 1, characterized in that said transistor circuit includes a gate controlled diode (GCD) which has a gate and whose breakdown voltage is controlled by a gate voltage applied to said gate; and a depletion type MOS transistor (TR15) coupled between the gate of said gate controlled diode (GCD) and the drain of said first MOS transistor (TR13).
Claim 9
Dependent Claim
32 words
A semiconductor integrated circuit according to claim 7, characterized in that said transistor circuit further has capacitive means (Cl) coupled between said depletion type MOS transistor (TR15) and a reference potential terminal.
Claim 10
Dependent Claim
49 words
A semiconductor integrated circuit according to claim 7, characterized in that said transistor circuit further has a depletion type MOS transistor (TR16) whose current path is connected between said depletion type MOS transistor (TR15) and a power source terminal and whose gate is connected to a reference potential terminal.
Claim 11
Dependent Claim
84 words
A semiconductor integrated circuit according to claim 7, characterized in that said gate controlled diode (GCD) is constituted by a substrate (3) of one conductivity type; a first semiconductor region (15) of an opposite conductivity type formed in the surface area of said substrate (3); a gate insulation layer (16) formed on the substrate (3) with part of said gate insulation layer formed on a portion of said first semiconductor region (15); and a gate electrode (17) formed on said gate insulation layer (16).
Claim 12
Dependent Claim
56 words
A semiconductor integrated circuit according to claim 10, characterized in that said gate controlled diode (GCD) further includes a second semiconductor region (18) of the opposite conductivity type formed in the surface area of said substrate (3) at a location apart from said gate insulation layer (16) so as to face said first semiconductor region (15).
Claim 13
Dependent Claim
101 words
A semiconductor integrated circuit according to any one of claims 1 to 11, characterized in that said first MOS transistor comprises: a substrate of one conductivity type; drain and source regions of an opposite conductivity type formed in the surface area of said substrate (3), said drain region including a first region and a second region having an impurity concentration lower than that of said first region; a gate insulation film formed on the partial area of said substrate between said source region and said second region of said drain region; and a gate electrode formed on said gate insulation film.
Claim 14
Dependent Claim
32 words
A semiconductor integrated circuit according to claim 1, characterized in that said transistor circuit (TR14) is a second MOS transistor having a gate insulation film thicker than said first MOS transistor (TR13).
Claim 15
Dependent Claim
45 words
A semiconductor integrated circuit according to claim 1, characterized in that said transistor circuit is a second MOS transistor (TR14) whose drain is connected to the drain of said first MOS transistor (TR13) and whose source and gate are coupled to a reference potential terminal.
Claim 16
Dependent Claim
41 words
A semiconductor integrated circuit according to claim 1, characterized in that said transistor circuit is a bipolar transistor whose collector is connected to the drain of said first MOS transistor (TR13) and whose emitter is coupled to a reference potential terminal.
Claim 17
Dependent Claim
76 words
A semiconductor integrated circuit according to claim 1, characterized in that said transistor circuit has a substrate (3) of one conductivity type and first and second semiconductor regions (11 and 12) of an opposite conductivity type formed in the surface area of said substrate (3), and said first semiconductor region (11 and 12) is connected to the drain of said first MOS transistor (TR13) and said second semiconductor region is coupled to a reference potential terminal.
References Cited (Backward Citations)
No citation records indexed.
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