EP0154824A2
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EP
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Ion Source
Assignee: Hitachi Ltd
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Filing: 1985-02-13
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Granted: —
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Expires: 2005-02-13
Abstract
Abstract An ion source equipped with an ion beam exit slit (7) for extracting ions from plasma generated in feed gas introduced into a discharge chamber (5), and with a gas inlet or inlets (110) for introducing the feed gas into the discharge chamber (5) in the proximity of the ion beam exit slit (7). Ion extraction can be made stably without any deposit on the ion beam exit slit (7) even when a boron halide is used as the feed gas. The effect of the ion source can be further enhanced by adding oxygen, hydrogen or gas of an oxygen-containing compound to the feed gas, and by using a microwave.
Inventors
- 👤 Katsumi Tokiguchi
- 👤 Hidemi Koike
- 👤 Noriyuki Sakudo
- 👤 Osami Okada
- 👤 Ken Ninomiya
- 👤 Susumu Ozasa
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-09 15:29
CPC Classifications
C; C07; C07D; C07D401/00; C07D401/02; H; H01; H01J; H01J37/00; H01J37/02; H01J37/04; H01J37/08; H01J27/00; H01J27/02; H01J27/022; H01J27/16; H01J27/18
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
53 words
An ion source characterized by including an ion beam exit slit (7) for extracting ions (21) from plasma generated in a feed gas introduced into a discharge chamber (5), and a gas inlet (110), for introducing said feed gas into said discharge member (5), disposed close to said ion beam exit slit (7).
Claim 2
Dependent Claim
53 words
An ion source characterized by including an ion beam exit slit (7) for extracting ions (21) from plasma generated in a feed gas introduced into a discharge chamber (5), and a gas inlet (110), for introducing said feed gas into said discharge member (5), disposed close to said ion beam exit slit (7).
Claim 3
Dependent Claim
74 words
The ion source according to claim 1 characterized in that the distance d between the end surface (120) of said discharge chamber (5), on which said ion beam exit slit (7) is disposed, and said gas inlet (110) and the distance d' between the wall surface of the portion of said discharge chamber (5), on which said gas inlet (110) is disposed, and a wall surface facing the former satisfy the relation d ≦2d'.
Claim 4
Dependent Claim
20 words
The ion source according to claim 2 characterized in that said distances d and said d' satisfy the relation d≦d'.
Claim 5
Dependent Claim
35 words
The ion source according to one of claims 1 to 3 characterized in that another gas inlet (110a) is disposed at a portion other than in the proximity of said ion beam exit slit (7).
Claim 6
Dependent Claim
55 words
The ion source according to claim 4 characterized by a gas introduction pipe (6) communicating with said gas inlet (110) and another gas introduction pipe (6a) communicating with said another gas inlet (110a), and in which a gas flow rate control valve (9b, 9a) is disposed in each of said gas introduction pipes (6, 6a).
Claim 7
Dependent Claim
43 words
The ion source according to one of claims 1 to 5 characterized in that said ion beam exit slit 17) is divided into a plurality of units, and the portions (7a, 7b, 7c) close to said slit (7) are thermally isolated (Fig. 8b).
Claim 8
Dependent Claim
32 words
The ion source according to claim 6 characterized in that electrically conductive boron nitride is used for at least a part of a portion (7b) constituting said ion beam exit slit (7).
Claim 9
Dependent Claim
29 words
The ion source according to one of claims 1 to 7 characterized by a magnetic field generator (13) and a microwave generator (1) in order to generate said plasma.
Claim 10
Dependent Claim
48 words
The ion source according to one of claims 1 to 8 characterized in that said feed gas is a mixed gas prepared by mixing at least one halide gas selected from boron halide gases with at least one gas which reacts with boron and forms a boron compound.
Claim 11
Dependent Claim
64 words
The ion source according to claim 9 characterized in that said boron halide gas is at least one member selected from the group consisting of boron trifluoride and boron trichloride, and said gas to be mixed with said halide gas is at least one member selected from the group consisting of oxygen gas, hydrogen gas, and gas of an oxygen-containing compound and their mixtures.
Claim 12
Dependent Claim
31 words
The ion source according to claim 10 characterized in that said gas of an oxygen-containing compound is CO, CO 2 , NO, N 2 0, SO 2 or H 2 0.
Claim 13
Dependent Claim
38 words
The ion source according to claim 10 or 11 characterized in that the quantity of said gas to be mixed with said halide gas is at least 0.1 % of said halide gas in terms of pressure ratio.
References Cited (Backward Citations)
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