EP0154517A2
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Semiconductor laser array
Assignee: Sharp Corp
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Filing: 1985-02-28
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Granted: —
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Expires: 2005-02-28
Abstract
Abstract A semiconductor laser array includes a p-GaAs substrate, a p-Ga 1-x Al x As cladding layer, a Ga 1-y Al y As active tayer, an n-Ga 1-z Al z As optical guide layer, an n-Ga 1-x Al- x As cladding layer and an n-GaAs cap layer formed by the liquid phase epitaxial growth method. A plurality of stripe shaped grooves are formed from the surface of the n-GaAs cap layer so that the bottom of the groove reaches the intermediate of the n-Ga 1-z Al z As optical guide layer. A Ga 1-b Al b As high resistance layer is filled in the plurality of stripe shaped-grooves so that injecting current is divided into the plural pathes, and each laser emitting region is optically, phase coupled to each other with the phase difference of zero degree.
Inventors
- 👤 Seiki Yano
- 👤 Sadayoshi Matsui
- 👤 Saburo Yamamoto
- 👤 Mototaka Taneya
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-31 19:12
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/40; H01S5/4025; H01S5/4031; H01S5/20; H01S5/22; H01S5/223; H01S5/2231
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
79 words
A semiconductor laser array comprising: a substrate; an active layer formed on said substrate; a plurality of mesa stripes formed on said active layer, each mesa stripe being separated from the next mesa stripe by a layer having a high mole fraction; and current injection means for injecting current into said active layer through said plurality of mesa stripes, wherein each laser emitting region defined by said mesa stripes is optically, phase connected to the next laser emitting region.
Claim 2
Dependent Claim
79 words
A semiconductor laser array comprising: a substrate; an active layer formed on said substrate; a plurality of mesa stripes formed on said active layer, each mesa stripe being separated from the next mesa stripe by a layer having a high mole fraction; and current injection means for injecting current into said active layer through said plurality of mesa stripes, wherein each laser emitting region defined by said mesa stripes is optically, phase connected to the next laser emitting region.
Claim 3
Dependent Claim
156 words
A GaAs semiconductor laser array comprising: a p-GaAs substrate; a p-Ga 1-x Al x As cladding layer formed on said p-GaAs substrate; a Ga 1-y Al y As active layer formed on said p-Ga 1-x Al x As cladding layer; an n-Ga 1-a Al z As optical guide layer formed on said Ga 1-y Rl y As active layer; an n-Ga 1-x Al x As cladding layer formed on said n-Ga 1-z Al z As optical guide layer; an n-GaAs cap layer formed on said n-Ga Al As cladding layer; a plurality of stripe shaped grooves formed in said n-GaAs cap layer, n-Ga 1-x Al x As cladding layer and said n-Ga 1-z Al z As optical guide layer so that the bottom of each groove reaches the middle of said n-Ga 1-z Al z As optical guide layer; and a plurality of stripe shaped high resistance layers disposed in said plurality of stripe shaped grooves.
Claim 4
Dependent Claim
156 words
A GaAs semiconductor laser array comprising: a p-GaAs substrate; a p-Ga 1-x Al x As cladding layer formed on said p-GaAs substrate; a Ga 1-y Al y As active layer formed on said p-Ga 1-x Al x As cladding layer; an n-Ga 1-a Al z As optical guide layer formed on said Ga 1-y Rl y As active layer; an n-Ga 1-x Al x As cladding layer formed on said n-Ga 1-z Al z As optical guide layer; an n-GaAs cap layer formed on said n-Ga Al As cladding layer; a plurality of stripe shaped grooves formed in said n-GaAs cap layer, n-Ga 1-x Al x As cladding layer and said n-Ga 1-z Al z As optical guide layer so that the bottom of each groove reaches the middle of said n-Ga 1-z Al z As optical guide layer; and a plurality of stripe shaped high resistance layers disposed in said plurality of stripe shaped grooves.
Claim 5
Dependent Claim
17 words
The GaAs semiconductor laser array of claim 2, wherein each mole fraction satisfies the following conditions: y<z<x
Claim 6
Dependent Claim
29 words
The GaAs semiconductor laser array of claim 3, wherein each of said plurality of stripe shaped high resistance layers comprises a Ga 1-b Al b As layer, where: z<b
References Cited (Backward Citations)
No citation records indexed.
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