EP0153737A2
Expired / Lapsed
EP
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Circuit substrate having high thermal conductivity
Assignee: Toshiba Corp
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Filing: 1985-02-27
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Granted: —
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Expires: 2005-02-27
Abstract
Abstract A high thermal conductivity circuit substrate is provided comprising a sintered aluminium nitride ceramic substrate consisting essentially of one member selected from the group of yttrium, the rare earth metals and the alkali earth metals and an electrically conductive thick film paste for a conductive layer formed on the substrate.
Inventors
- 👤 Nobuo Iwase
- 👤 Kazuo Anzai
- 👤 Kazuo Shinozaki
- 👤 Akihiko Tsuge
- 👤 Kazutaka Saito
- 👤 Kiyoshi Riyogi
- 👤 Noboru Sato
- 👤 Mitsuo Kasori
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-01 18:10
CPC Classifications
C; C04; C04B; C04B41/00; C04B41/009; C04B41/45; C04B41/50; C04B41/51; C04B41/5111; C04B41/52; C04B41/80; C04B41/81; C04B41/85; C04B41/88; C04B41/89; H; H10; H10W; H10W40/00; H10W40/20; H10W40/25; H10W40/259; H10W70/00; H10W70/60; H10W70/67; H10W70/69; H10W70/692; C04B2111/00; C04B2111/00474; C04B2111/00844; H05; H05K; H05K1/00; H05K1/02; H05K1/03; H05K1/0306; Y; Y10; Y10S; Y10S428/00; Y10S428/901; Y10T; Y10T428/00; Y10T428/24; Y10T428/24802; Y10T428/24917; Y10T428/24926
Claims Analysis
Total Claims: 17
Claim 1
Independent Claim
64 words
A high thermal conductivity circuit substrate comprising (a) a sintered aluminum nitride ceramic substrate consisting essentially of at least one member selected from the group of yttrium, the rare earth metals and the alkali earth metals the balance being essentially aluminium nitride and incidental impurities and (b) a conductive path or layer made from electrically conductive thick film paste formed on said ceramic substrate.
Claim 2
Dependent Claim
64 words
A high thermal conductivity circuit substrate comprising (a) a sintered aluminum nitride ceramic substrate consisting essentially of at least one member selected from the group of yttrium, the rare earth metals and the alkali earth metals the balance being essentially aluminium nitride and incidental impurities and (b) a conductive path or layer made from electrically conductive thick film paste formed on said ceramic substrate.
Claim 3
Dependent Claim
42 words
The high thermal conductivity circuit substrate of claim 1, wherein.the amount of said member selected from the group of yttrium, the rare earth metals and the alkali earth metals is from about 0.01% to about 15% of metal element equivalent by weight.
Claim 4
Dependent Claim
38 words
The high thermal conductivity circuit substrate of claim 1, wherein said conductive paste is selected from the group of silver paste comprising silver, silver and platinum, or silver and palladium, copper paste, gold platinum paste and gold paste.
Claim 5
Dependent Claim
16 words
The high thermal conductivity circuit substrate of claim 3, wherein said conductive paste contains copper oxide.
Claim 6
Dependent Claim
26 words
The high thermal conductivity circuit substrate of claim 4, wherein the amount, CU20 equivalent, of copper oxide is from about 0.1% to about 30% by weight.
Claim 7
Dependent Claim
30 words
The high thermal conductivity circuit substrate of claim 1, wherein the bond strength between the circuit substrate and the conductive path or layer is at least about.1 kg/mm 2 .
Claim 8
Dependent Claim
29 words
The high thermal conductivity circuit substrate of claim 1, wherein an intermediate layer containing copper, aluminium and oxygen is formed between said ceramic substrate and the thick film paste.
Claim 9
Dependent Claim
33 words
The high thermal conductivity circuit substrate of claim 1, wherein said conductive paste contains lead and silicon to bond said conductive path or layer to said circuit substrate in a chemical bond type.
Claim 10
Dependent Claim
28 words
The high thermal conductivity circuit substrate of claim 8, wherein the amount in metal element of lead and silicon is about 0.05% to about 5 % by weight.
Claim 11
Dependent Claim
25 words
The high thermal conductivity circuit sabstrate of claim 8, wherein the amount in metal element of lead is up to about 4 % by weight.
Claim 12
Dependent Claim
32 words
The high thermal conductivity circuit substrate of claim 8, wherein an intermediate layer containing lead, silicon and oxygen concentrated therein is formed between said circuit substrate and said conductive layer or path.
Claim 13
Dependent Claim
26 words
The high thermal conductivity circuit substrate of claim 11, wherein said intermediate layer containing lead, silicon and oxygen is from 0.5 pm to 20 pm thick.
Claim 14
Dependent Claim
21 words
The high thermal conductivity circuit substrate of claim 1, wherein said curcuit substrate has an oxide layer on the surface thereof.
Claim 15
Dependent Claim
16 words
The high thermal conductivity circuit substrate of claim 13, wherein a glass layer is bonded thereon.
Claim 16
Dependent Claim
19 words
The high thermal conductivity circuit substrate of claim 13, wherein said oxide layer is 2 to 20 µm thick.
Claim 17
Dependent Claim
17 words
The high thermal conductivity circuit substrate of claim 14, wherein said glass layer functions as a resistor.
References Cited (Backward Citations)
No citation records indexed.
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